Issue 11, 2023

Magnetic-field-dependent spin properties of divacancy defects in silicon carbide

Abstract

In recent years, spin defects in silicon carbide have become promising platforms for quantum sensing, quantum information processing and quantum networks. It has been shown that their spin coherence times can be dramatically extended with an external axial magnetic field. However, little is known about the effect of magnetic-angle-dependent coherence time, which is an essential complement to defect spin properties. Here, we investigate the optically detected magnetic resonance (ODMR) spectra of divacancy spins in silicon carbide with a magnetic field orientation. The ODMR contrast decreases as the off-axis magnetic field strength increases. We then study the coherence times of divacancy spins in two different samples with magnetic field angles, and both of the coherence times decrease with the angle. The experiments pave the way for all-optical magnetic field sensing and quantum information processing.

Graphical abstract: Magnetic-field-dependent spin properties of divacancy defects in silicon carbide

Article information

Article type
Paper
Submitted
27 Nov 2022
Accepted
22 Jan 2023
First published
01 Feb 2023

Nanoscale, 2023,15, 5300-5304

Magnetic-field-dependent spin properties of divacancy defects in silicon carbide

F. Yan, J. Wang, Z. He, Q. Li, W. Lin, J. Zhou, J. Xu, C. Li and G. Guo, Nanoscale, 2023, 15, 5300 DOI: 10.1039/D2NR06624F

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