 Open Access Article
 Open Access Article
      
        
          
            Dingbo 
            Zhang‡
          
        
        
      ab, 
      
        
          
            Ke 
            Wang‡
          
        
      c, 
      
        
          
            Shuai 
            Chen
          
        
       b, 
      
        
          
            Lifa 
            Zhang
          
        
      d, 
      
        
          
            Yuxiang 
            Ni
b, 
      
        
          
            Lifa 
            Zhang
          
        
      d, 
      
        
          
            Yuxiang 
            Ni
          
        
       *a and 
      
        
          
            Gang 
            Zhang
*a and 
      
        
          
            Gang 
            Zhang
          
        
       *b
*b
      
aSchool of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China. E-mail: yuxiang.ni@swjtu.edu.cn
      
bInstitute of High Performance Computing, A*STAR, 138632, Singapore. E-mail: zhangg@ihpc.a-star.edu.sg
      
cSchool of Automation, Xi'an University of Posts & Telecommunications, Shaanxi 710121, China
      
dNNU-SULI Thermal Energy Research Center, and Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China
    
First published on 6th December 2022
In this study, based on ab initio calculations and the phonon Boltzmann transport equation, we found that magnetic phase transitions can lead to a significant change in the thermal conductivity of monolayer MnPS3. Around the Néel temperature (78 K) with the antiferromagnetic–paramagnetic (AFM–PM) phase transition, its thermal conductivity increases from 14.89 W mK−1 (AFM phase) to 103.21 W mK−1 (PM phase). Below 78 K, the thermal conductivity of monolayer MnPS3 can be doubled by applying a magnetic field of 4 T, this value has been reported in a previous experiment for the antiferromagnetic–ferromagnetic (AFM–FM) phase transition. Above 78 K, the thermal conductivity of PM phase can be greatly reduced through the PM–AFM magnetic phase transition. In addition to the value of thermal conductivity, the relative contribution ratio between acoustic and optical modes changes with different magnetic phases. The subsequent analyses demonstrate that this regulation originates from the change in lattice parameter, bonding interaction and phonon anharmonicity. In addition, the different effect on the thermal conductivity between the FM and AFM phases was identified by comparing the corresponding phonon scattering characteristics. This study should shed light on the understanding of phonon thermal conductivity in 2D magnets, and provide a practical method for the realization of 2D thermal switching devices, which would enable a broad range of novel applications including energy conversion and thermal management.
In recent years, progress has been made in understanding the magnetic ordering impact on the thermal transport of 2D magnetic materials. For instance, semi-hydrogenated graphene bears a higher thermal conductivity in its FM phase (55.7 W mK−1) than in the paramagnetic (PM) phase (24.5 W mK−1).6 For monolayer CrI3, the magnetic state enhances the thermal conductivity because it induces a more symmetric structure with weaker phonon anharmonicity.7 It should be mentioned that antiferromagnets have drawn more attention than ferromagnets,11–13 owing to their several advantages including spin superfluidity,14 ultrafast dynamics15 and the negligible spin–dipole interaction.16 Unfortunately, little is known about the thermal conductivity in 2D antiferromagnetic materials.
Recently, 2D MnPS3, one novel antiferromagnet, was obtained through chemical exfoliation.17 The unit cell of monolayer MnPS3 is composed of two Mn2+ ions and one [P2S6]4−, forming a hexagonal honeycomb lattice, as shown in Fig. 1.18 So, the antiferromagnetic configuration in the MnPS3 unit cell is described as one Mn atom which is spin-up and the other one is spin-down. In addition, 2D MnPS3 is one direct bandgap semiconductor, sharing ultrafast domain-wall dynamics and the spin photogalvanic effect.15,19 Excitons in MnPS3 are bound by an energy of more than 1 eV, exceeding the values in transition-metal dichalcogenides, advancing this 2D antiferromagnet as a new platform for exploring the magnetic and phononic properties.20
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| Fig. 1 The structure and phonon behaviors. (a) Atomic structure of monolayer MnPS3. (b) Phonon dispersions and (c) phonon density of states of monolayer MnPS3 with PM/FM/AFM phases. | ||
In this work, we investigated the structures, lattice vibrations and thermal conductivities of monolayer MnPS3 with PM, ferromagnetic (FM) and antiferromagnetic (AFM) phases. We found that, through the PM–AFM phase change, the phonon anharmonicity of monolayer MnPS3 obviously increased and the thermal conductivity decreased by one order of magnitude. Meanwhile, the AFM phase has lower thermal conductivity compared with its FM counterpart. The phonon mean free path (MFP), group velocity and phonon scattering strength were analyzed to reveal the underling physical mechanism.
![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) 26,27 Therefore, in our work, only second- and third-order force constants are considered. The thermal conductivity was calculated by solving the phonon Boltzmann transport equation as implemented in ShengBTE.28 After structure optimization, 10.67, 7.69 and 7.76 Å are used as the thickness of the monolayer MnPS3 with PM, FM and AFM phases, respectively. The thickness of the monolayer is equal to the height of a bulk cell in the Z direction divided by the corresponding number of atomic layers. Details of the calculation can be found in ESI.†
26,27 Therefore, in our work, only second- and third-order force constants are considered. The thermal conductivity was calculated by solving the phonon Boltzmann transport equation as implemented in ShengBTE.28 After structure optimization, 10.67, 7.69 and 7.76 Å are used as the thickness of the monolayer MnPS3 with PM, FM and AFM phases, respectively. The thickness of the monolayer is equal to the height of a bulk cell in the Z direction divided by the corresponding number of atomic layers. Details of the calculation can be found in ESI.†
    
    
      
      | Properties | PM | FM | AFM | 
|---|---|---|---|
| Lattice constant (Å) | 5.70 | 6.14 | 6.15 | 
| Mn–S bond length (Å) | 2.45 | 2.61 | 2.63 | 
| P–S bond length (Å) | 3.26 | 3.38 | 3.40 | 
| Layer thickness (Å) | 10.67 | 7.69 | 7.76 | 
Based on the frozen magnon method, the relationship of the harmonic IFCs between FM (AFM) and PM structures is described by the following formula:
![[F with combining tilde]](https://www.rsc.org/images/entities/i_char_0046_0303.gif) and F are the harmonic IFCs in the FM(AFM) and PM phases, respectively. J′′ stands for the second derivative of magnetic exchange interaction J. The movement of atom i is marked by
 and F are the harmonic IFCs in the FM(AFM) and PM phases, respectively. J′′ stands for the second derivative of magnetic exchange interaction J. The movement of atom i is marked by  lattice vector along the α(β) Cartesian direction. S is equal to half of the spin number in a magnetic atom. The J′′ of FM and AFM phases can be calculated via the interatomic force constants (Fig. 2). It is obvious that the IFCs of AFM and FM states are similar, while the difference in IFCs between PM and AFM states is quite significant, resulting in the difference in the lattice constant between PM and AFM states is up to 0.45 Å. This is similar to the previous theoretical results about the difference in lattice constant between the PM31,32 and AFM states.31 Similar phenomena were also observed in bulk MnPS3.31,33
 lattice vector along the α(β) Cartesian direction. S is equal to half of the spin number in a magnetic atom. The J′′ of FM and AFM phases can be calculated via the interatomic force constants (Fig. 2). It is obvious that the IFCs of AFM and FM states are similar, while the difference in IFCs between PM and AFM states is quite significant, resulting in the difference in the lattice constant between PM and AFM states is up to 0.45 Å. This is similar to the previous theoretical results about the difference in lattice constant between the PM31,32 and AFM states.31 Similar phenomena were also observed in bulk MnPS3.31,33
        With 10 atoms in the unit cell, monolayer MnPS3 has 3 acoustic and 27 optical phonon modes. To better observe the difference in phonon dispersions among PM, FM and AFM phases, we presented them in Fig. 1(b), while more details are presented in Fig. S2.† The phonon branches in the FM and AFM phases are similar, which are different from that in the PM phase. Next, we mainly focused on the three optical branches of the PM structure, which are located in the gap of the FM/AFM phases (marked by red circle). The corresponding vibration modes are presented in Fig. S3† and their irreducible representations are A1g, A2g and A2u modes, respectively. These three lattice vibration modes are identified in the FM/AFM phases. The frequencies of these three optical branches are 9.90, 15.09 and 15.76 THz at Γ point in the PM phase, while these values are 5.18 (5.21), 16.11 (16.12) and 16.15 (16.15) THz in the FM (AFM) phase, respectively. The appearance of the large splitting between PM and FM/AFM phases for the three optical branches is mainly due to the sensitivity of the atoms in MnPS3 to the magnetic ordering, which induces the down- and up-shift of optical phonon modes mainly contributed by Mn atoms and other atoms, respectively. The phonon projected density of states (pDOS) shown in Fig. 1(c) confirms the shift of optical phonons, which also demonstrates the redshift of acoustic phonon modes in the AFM/FM phases compared with the PM phase. These results indicate significant coupling between spin and phonon in the FM and AFM monolayer MnPS3.
![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) :
:![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) κAFM = 6.93 and κPM
κAFM = 6.93 and κPM![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) :
:![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) κFM = 3.77) is comparable to those of reported theoretical works such as RuCl3 (κFM
κFM = 3.77) is comparable to those of reported theoretical works such as RuCl3 (κFM![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) :
:![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) κPM = 6.23), RuBr3 (κFM
κPM = 6.23), RuBr3 (κFM![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) :
:![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) κPM = 6.87) and RuI3 (κFM
κPM = 6.87) and RuI3 (κFM![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) :
:![[thin space (1/6-em)]](https://www.rsc.org/images/entities/char_2009.gif) κPM = 1.59).9 In experiments, below 78 K, the thermal conductivity of monolayer MnPS3 can be doubled by applying an magnetic field perpendicular to the layer, where the critical value of the magnetic field for the AFM–FM phase transition is about 4 T.17 Above 78 K, the thermal conductivity can be greatly reduced through external magnetic fields, this method has been demonstrated to induce a PM–AFM magnetic phase transition.1,34 Thus, the large modulation of the thermal conductivity of monolayer MnPS3 provides a practical method for the realization of 2D thermal switching devices.
κPM = 1.59).9 In experiments, below 78 K, the thermal conductivity of monolayer MnPS3 can be doubled by applying an magnetic field perpendicular to the layer, where the critical value of the magnetic field for the AFM–FM phase transition is about 4 T.17 Above 78 K, the thermal conductivity can be greatly reduced through external magnetic fields, this method has been demonstrated to induce a PM–AFM magnetic phase transition.1,34 Thus, the large modulation of the thermal conductivity of monolayer MnPS3 provides a practical method for the realization of 2D thermal switching devices.
        |  | ||
| Fig. 3 The thermal conductivity. (a) The magnetic ordering-dependent thermal conductivities and (b) contribution of acoustic and optical modes to the thermal conductivities at 78 K. | ||
In these three magnetic phases, acoustic phonons are still the major contributors to the thermal conductivity but the relative contribution ratio between acoustic and optical modes changes with different magnetic phases (Fig. 3(b)). This behavior also occurs in hydrogenated graphene.6 Recently, the impact of the four-phonon scattering process on the thermal conductivity of solids have attracted extensive research attention.35,36 Compared with the relaxation time of phonons in the low frequency range, the relaxation time of phonons in the high frequency range (i.e., optical modes) will be reduced more significantly by the four-phonon scattering processes.37 For PM/AFM/FM MnPS3, the thermal conductivity contributed by the optical phonons is low. Thus, the four-phonon scattering process is not considered in our work. To understand the underlying physical mechanism of the tunable thermal conductivity, we analyzed the phonon mean free path, group velocity and phonon scattering strength.
|  | ||
| Fig. 4 The magnetic ordering-dependent phonon behaviors. (a) Mean free paths and (b) frequency-resolved phonon group velocities of the PM/FM/AFM phases. | ||
Phonon scattering strength and phonon anharmonicity of these three magnetic phases were evaluated by calculating the scattering rate, the scattering phase space and the Grüneisen parameter.38,39 These parameters reflect the scattered possibility in unit time, the number of channels available for a phonon to be scattered and the phonon anharmonicity, respectively.40 As presented in Fig. 5(a) and Fig. S4,† the phonon–phonon anharmonic scattering rate and phonon-isotope scattering rate in AFM/FM phases are obviously higher than that in the PM phase, which implies that the phonon relaxation time is shortened. Fig. 5(b) shows that the AFM/FM phases have a greater value of scattering phase space than the PM phase at the same frequency, which implies that the former phases hold more scattering channels than the latter one. The scattering phase space gradually decreases with the increase of phonon frequency, which was also observed in 2D group-IV materials.41 This is a consequence of the fact that the phonon branches at low frequencies are denser (Fig. 1(b)), which causes more phonon scattering possibility in accordance with the requirement of energy and momentum conservation.
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| Fig. 5 The magnetic ordering-dependent phonon scattering characteristics. (a) Anharmonic scattering rates, (b) scattering phase spaces and (c) Grüneisen parameters for the PM/FM/AFM phases. | ||
As shown in Fig. 5(c), the Grüneisen parameters of the AFM/FM phases are smaller than that of the PM structure. These results show that the phonon scattering and anharmonicity in FM/AFM monolayer MnPS3 are enhanced significantly. Moreover, the Grüneisen parameter varies inversely with the bond strength of the material.42,43 Therefore, the FM/AFM phases have weaker bonding interaction compared with the PM phase, which is in agreement with our aforementioned simulation results.
| Footnotes | 
| † Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d2nr04709h | 
| ‡ Authors contributed equally to this work. | 
| This journal is © The Royal Society of Chemistry 2023 |