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Retraction: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability
Sung Hyeon
Jung
a,
Ji Sook
Yang
a,
Young Been
Kim
a,
Nishad G.
Deshpande
b,
Dong Su
Kim
a,
Ji Hoon
Choi
a,
Hee Won
Suh
a,
Hak Hyeon
Lee
a and
Hyung Koun
Cho
*ac
aSchool of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea. E-mail: chohk@skku.edu
bIndian Institute of Information Technology Surat, 395007, India
cResearch Center for Advanced Materials Technology, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea
First published on 18th October 2023
Abstract
Retraction of ‘Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability’ by Sung Hyeon Jung et al., Mater. Horiz., 2022, 9, 1010–1022, https://doi.org/10.1039/D1MH01568K.
The Royal Society of Chemistry, with the agreement of the authors, hereby wholly retracts this Materials Horizons Communication due to concerns over reproducibility. This study represents the first attempt to fabricate semiconductor transistors using an electrochemical approach for oxide semiconductors, resulting in the production of vertical transistors. In contrast to conventional planar transistors, this research presents results based on vertically fabricated transistors. Recently, when we repeated the fabrication of vertical transistors, we were unable to reproduce the results in the article. We became aware that the previous study had overlooked some reliability issues of semiconductor layers produced through electrochemical means as well as errors in the measurement methods used to prepare the results. The vertical structure significantly differs from the conventional planar structure in terms of channel configuration, requiring new considerations for the evaluation and calculation of the device's electrical characteristics. Regrettably, this aspect was not sufficiently taken into account, resulting in an overestimation of the most critical parameter, channel mobility, in the transistor, which may have led to wrong results in the paper. We, as the authors of this Materials Horizons Communication, wish to retract this Communication.
Signed: Sung Hyeon Jung, Ji Sook Yang, Young Been Kim, Nishad G. Deshpande, Dong Su Kim, Ji Hoon Choi, Hee Won Suh, Hak Hyeon Lee and Hyung Koun Cho, 10th October 2023.
Retraction endorsed by Michaela Mühlberg, Executive Editor, Materials Horizons.
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