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Correction: Unveiling of interstice-occupying dopant segregation at grain boundaries in perovskite oxide dielectrics for a new class of ceramic capacitors
Ji-Sang
An
a,
Hae-Seung
Lee
a,
Pilgyu
Byeon
a,
Dongho
Kim
a,
Hyung Bin
Bae
b,
Si-Young
Choi
c,
Jungho
Ryu
d and
Sung-Yoon
Chung
*a
aDepartment of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea. E-mail: sychung@kaist.ac.kr
bKAIST Analysis Center, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea
cDepartment of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
dSchool of Materials Science and Engineering, Yeungnam University, Gyeongsan, Gyeongbuk 38541, Korea
First published on 22nd May 2023
Abstract
Correction for ‘Unveiling of interstice-occupying dopant segregation at grain boundaries in perovskite oxide dielectrics for a new class of ceramic capacitors’ by Ji-Sang An et al., Energy Environ. Sci., 2023, https://doi.org/10.1039/d2ee03152c.
In the original version of the manuscript, ref. 54 was incorrect. Ref. 54 should appear as follows:
54. C.-H. Kim, K.-J. Park, Y.-J. Yoon, M.-H. Hong, J.-O. Hong and K.-H. Hur, J. Eur. Ceram. Soc., 2008, 28, 1213-1219.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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