Open Access Article
This Open Access Article is licensed under a Creative Commons Attribution 3.0 Unported Licence
Correction: Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing
Yewon
Kim
a,
Kwonyoung
Kim
a,
Okhyeon
Kim
a,
Chang Yup
Park
b,
Dong Geon
Koo
b,
Dong-Ho
Ahn
b,
Bong Jin
Kuh
b and
Won-Jun
Lee
*a
aDepartments of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea. E-mail: wjlee@sejong.ac.kr
bProcess Development, Semiconductor R&D Center, Samsung Electronics Co., Ltd., 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Republic of Korea
First published on 8th August 2022
Abstract
Correction for ‘Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing’ by Yewon Kim et al., J. Mater. Chem. C, 2022, 10, 9691–9698, DOI: https://doi.org/10.1039/D2TC00784C.
The authors regret errors in affiliation b of the coauthors in the published article, from which the words “Samsung Electronics Co., Ltd.” were unfortunately omitted. The correct affiliation list is as shown here.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
| This journal is © The Royal Society of Chemistry 2022 |