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Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility†
Congcong
Ma‡
ab,
Zhengyuan
Wu‡
ab,
Zhuoxun
Jiang
a,
Ying
Chen
ab,
Wei
Ruan
a,
Hao
Zhang
*ac,
Heyuan
Zhu
a,
Guoqi
Zhang
a,
Junyong
Kang
d,
Tong-Yi
Zhang
e,
Junhao
Chu
b and
Zhilai
Fang
*ab
aSchool of Information Science and Technology, and Academy for Engineering and Technology, Fudan University, Shanghai 200433, China. E-mail: zlfang@fudan.edu.cn
bInstitute of Optoelectronics, Fudan University, Shanghai 200433, China
cYiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China. E-mail: zhangh@fudan.edu.cn
dCollaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China
eMaterials Genome Institute, Shanghai University, 333 Nanchen Road, Shanghai 200444, China
First published on 9th May 2022
Abstract
Correction for ‘Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility’ by Congcong Ma et al., J. Mater. Chem. C, 2022, DOI: https://doi.org/10.1039/d1tc05324h.
The authors wish to point out that in the published article the footnote “‡ These authors contributed equally to this work.” applies only to the authors Congcong Ma and Zhengyuan Wu.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
Footnotes |
| † Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d1tc05324h |
| ‡ These authors contributed equally to this work. |
| This journal is © The Royal Society of Chemistry 2022 |