A perovskite/porous GaN crystal hybrid structure for ultrahigh sensitivity ultraviolet photodetectors

Abstract

Integration of a perovskite with third-generation semiconductors has attracted extensive attention in numerous fields, such as wireless communication systems and spatial optical communications. Embedding a methyl lead bromide perovskite (CH₃NH₃PbBr₃ or MAPbBr₃) into nanoporous GaN (NP GaN) would introduce unique optical and electrical properties that aid in overcoming the intrinsic limitation of the materials. In this study, an ultra-high sensitivity MAPbBr₃/NP GaN hybrid structure device was fabricated for the first time and then the theoretical simulation was carried out using a computational electromagnetic method. The experimental results show that the device has excellent photoresponse characteristics under illumination of UV light of 325 nm at a voltage of 5 V, with a high current on/off ratio of about 5000 and fast response speeds of 0.21/0.44 s, compared with a GaN photodetector under the same conditions. This high performance can be attributed to the built-in electric field (BEF) generated at the interface of the MAPbBr₃ film and NP GaN, which significantly enhanced the light harvesting ability of high-porosity NP GaN. It is expected that such high-performance PDs will have great application potential in the fields of ultraviolet radiation monitoring, space optical communication, and biological analysis.