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Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
Dmitry
Dzhigaev
*a,
Johannes
Svensson
b,
Abinaya
Krishnaraja
b,
Zhongyunshen
Zhu
b,
Zhe
Ren
a,
Yi
Liu
a,
Sebastian
Kalbfleisch
c,
Alexander
Björling
c,
Filip
Lenrick
a,
Zoltan Imre
Balogh
d,
Susanna
Hammarberg
a,
Jesper
Wallentin
a,
Rainer
Timm
a,
Lars-Erik
Wernersson
b and
Anders
Mikkelsen
a
aDivision of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. E-mail: dmitry.dzhigaev@sljus.lu.se
bElectrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
cMAX IV Laboratory, Lund University, 22100 Lund, Sweden
dDTU CEN, DTU, Fysikvej 2800, Lyngby, Denmark
First published on 23rd March 2022
Abstract
Correction for ‘Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction’ by Dmitry Dzhigaev et al., Nanoscale, 2020, 12, 14487–14493, DOI: 10.1039/D0NR02260H.
The authors regret that the Acknowledgements section in the original manuscript was incorrect. The Acknowledgements should read as follows:
Acknowledgements
We acknowledge MAX IV Laboratory for time on Beamline NanoMAX under Proposal 20180047. Research conducted at MAX IV, a Swedish national user facility, is supported by the Swedish Research council under contract 2018-07152, the Swedish Governmental Agency for Innovation Systems under contract 2018-04969, and Svenska Forskningsrådet Formas under contract 2019-02496.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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