Issue 39, 2022

Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics

Abstract

Two-dimensional (2D) polarization-sensitive detection as a new photoelectric application technology is extensively investigated. However, most devices are mainly based on individual anisotropic materials, which suffer from large dark current and relatively low anisotropic ratio, limiting the practical application in polarized imaging system. Herein, we design a van der Waals (vdWs) p-type SnS/n-type InSe vertical heterojunction with proposed type-II band alignment via low-pressure physical vapor deposition (LPPVD) and dry transfer method. The performance compared with the distinctive thickness of anisotropic SnS component was first studied. The fabricated device with a thick (80 nm) SnS nanosheet exhibits a larger rectification ratio exceeding 103. Moreover, the SnS/InSe heterostructure shows a broadband spectral photoresponse from 405 to 1100 nm with a significant photovoltaic effect. Due to efficient photogenerated carrier separation across the wide depletion region at zero bias, the device with thinner (12.4 nm) SnS exhibits trade-off photoresponse performance with a maximum responsivity of 215 mA W−1, an external quantum efficiency of 42.2%, specific detectivity of 1.05 × 1010 Jones, and response time of 8.6/4.2 ms under 635 nm illumination, respectively. In contrast, benefiting from the stronger in-plane anisotropic structure of thinner SnS component, the device delivers a large photocurrent anisotropic ratio of 4.6 under 635 nm illumination in a zigzag manner. Above all, our work provides a new design scheme for multifunctional optoelectronic applications based on thickness-dependent 2D vdWs heterostructures.

Graphical abstract: Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics

Supplementary files

Article information

Article type
Paper
Submitted
28 Jul 2022
Accepted
15 Sep 2022
First published
16 Sep 2022

Nanoscale, 2022,14, 14603-14612

Low-pressure PVD growth SnS/InSe vertical heterojunctions with type-II band alignment for typical nanoelectronics

P. Gao, M. Yang, C. Wang, H. Li, B. Yang, Z. Zheng, N. Huo, W. Gao, D. Luo and J. Li, Nanoscale, 2022, 14, 14603 DOI: 10.1039/D2NR04165K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements