Issue 20, 2022

Directed exfoliating and ordered stacking of transition-metal-dichalcogenides

Abstract

Two-dimensional van der Waals crystals provide a limitless scope for designing novel combinations of physical properties by controlling the stacking order or twist angle of individual layers. Lattice orientation between stacked monolayers is significant not only for breaking the engineering symmetry but also for the study of many-body quantum phases and band topology. Thus far the state-of-the-art exfoliation approaches focus on the achievements of quality, size, yield, and scalability, while lacking sufficient information on lattice orientation. Consequently, interlayer alignment is usually determined by later experiments, such as the second harmonic generation spectroscopy, which increase the number of trials and errors for a designed artificial ordering and hampered the efficiency of systematic study. Herein, we report a lattice orientation distinguishable exfoliation method via gold favor epitaxy along the specific atomic step edges, meanwhile, fulfilling the requirements of high-quality, large-size, and high-yield monolayers. Hexagonal- and rhombohedral-stacking configurations of bilayer transition metal dichalcogenides are built directly at once as a result of foreseeing the lattice orientation. Optical spectroscopy, electron diffraction, and angle-resolved photoemission spectroscopy are used to study crystal quality, symmetric breaking, and band tuning, which support the exfoliating mechanism we proposed. This strategy shows the ability to facilitate the development of ordering stacking especially for multilayers assembling in the future.

Graphical abstract: Directed exfoliating and ordered stacking of transition-metal-dichalcogenides

Supplementary files

Article information

Article type
Paper
Submitted
22 Nov 2021
Accepted
02 Apr 2022
First published
14 Apr 2022

Nanoscale, 2022,14, 7484-7492

Directed exfoliating and ordered stacking of transition-metal-dichalcogenides

Y. Li, X. Xie, B. Li, X. Sun, Y. Yang, J. Liu, J. Feng, Y. Zhou, Y. Li, W. Liu, S. Wang, W. Wang, H. Zeng, Z. Zhang, D. Shen and D. Shen, Nanoscale, 2022, 14, 7484 DOI: 10.1039/D1NR07688D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements