Open Access Article
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Correction: Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations
Xiao
Tang
*a,
Kuang-Hui
Li
a,
Che-Hao
Liao
a,
Dongxing
Zheng
b,
Chen
Liu
b,
Rongyu
Lin
a,
Na
Xiao
a,
Shibin
Krishna
a,
Jose
Tauboada
a and
Xiaohang
Li
*a
aAdvanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia. E-mail: xiao.tang@kaust.edu.sa; Xiaohang.li@kaust.edu.sa
bDivision of Physical Science and Engineering (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
First published on 2nd December 2021
Abstract
Correction for ‘Epitaxial growth of β-Ga2O3 (−201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations’ by Xiao Tang et al., J. Mater. Chem. C, 2021, 9, 15868–15876, DOI: 10.1039/D1TC02852A.
The authors regret the omission of the email address for the co-corresponding author, Xiaohang Li, from the original published article. Their email address is Xiaohang.li@kaust.edu.sa, and the corrected author affiliation details are shown here.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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