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Correction: Charge transfer doping with an organic layer to achieve a high-performance p-type WSe2 transistor
Minho
Yoon
a and
Jiyoul
Lee
*ab
aDepartment of Smart Green Technology Engineering, Pukyong National University, Busan, 48547, Korea. E-mail: jiyoul_lee@pknu.ac.kr
bDepartment of Nanotechnology Engineering, Pukyong National University, Busan, 48547, Korea
First published on 22nd July 2021
Abstract
Correction for ‘Charge transfer doping with an organic layer to achieve a high-performance p-type WSe2 transistor’ by Minho Yoon et al., J. Mater. Chem. C, 2021, DOI: 10.1039/D1TC01780B.
The authors regret an error in Fig. 1 of the published article, where Fig. 1(d) was replaced with a copy of Fig. 1(c). The corrected form of Fig. 1 is shown below:
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| Fig. 1 (a) Optical micrograph of the WSe2/dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) field-effect transistor (FET), along with Au source (S)/drain (D) electrodes; the green square region is patterned DNTT, and the inset shows a magnified S/D region over the WSe2 FET channel. (b) Three-dimensional schematics of the WSe2/DNTT FET on a hydrophobic benzocyclobutene (BCB) (300 nm)/SiO2 (285 nm) dielectric support. (c) Atomic force microscopy image and thickness profile (∼10 nm) of the WSe2 FET channel. (d) Raman spectrum of the WSe2 flake, before DNTT deposition; the peaks near 250 and 257 cm−1 correspond to the in-plane (E2g) and out-of-plane (A1g) vibrational modes, respectively. (e) Transfer characteristics of DNTT and the WSe2 FET before and after DNTT deposition. (f) Output characteristics of the WSe2/DNTT FET. | ||
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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