Issue 27, 2021

Phonon scattering in the complex strain field of a dislocation in PbTe

Abstract

Strain engineering is critical to the performance enhancement of electronic and thermoelectric devices because of its influence on the material thermal conductivity. However, current experiments cannot probe the detailed physics of the phonon-strain interaction due to the complex, inhomogeneous, and long-distance features of the strain field in real materials. Dislocations provide us with an excellent model to investigate these inhomogeneous strain fields. In this study, non-equilibrium molecular dynamics simulations were used to study the lattice thermal conductivity of PbTe under different strain statuses tuned by dislocation densities. The extended 1D McKelvey–Shockley flux method was used to analyze the frequency dependence of phonon scattering in the inhomogeneously strained regions of dislocations. A spatially resolved phonon dislocation scattering process was shown, where the unequal strain in different regions affected the magnitude and frequency-dependence of the scattering rate. Our study not only advances the knowledge of strain scattering of phonon propagation but offers fundamental guidance on optimizing thermal management by structure design.

Graphical abstract: Phonon scattering in the complex strain field of a dislocation in PbTe

Supplementary files

Article information

Article type
Paper
Submitted
24 Feb 2021
Accepted
25 May 2021
First published
05 Jun 2021

J. Mater. Chem. C, 2021,9, 8506-8514

Phonon scattering in the complex strain field of a dislocation in PbTe

Y. Sun, Y. Zhou, R. Gurunathan, J. Zhang, M. Hu, W. Liu, B. Xu and G. J. Snyder, J. Mater. Chem. C, 2021, 9, 8506 DOI: 10.1039/D1TC00902H

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