Correction: Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe₂

Abstract

Correction for ‘Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe₂’ by Jonas Keukelier et al., J. Mater. Chem. C, 2021, DOI: 10.1039/d0tc04086j.

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In the published article, Table 4 contained an error in the row “Adding Sb”: the entry “Se–Se↑” should have read “Se–Se↓”.

The corrected version of Table 4 is shown below:

Table 4 Summary of the impact of several (post)deposition processes on the bond presence and electrical parameters compared to as-deposited 35% Ge GeSe₂. Arrows indicate an increased or decreased presence of bonds

Process	Impact on bonds	Impact on electrical parameters
Annealing	Pure Ge–Ge & Se–Se↓	Lower Ipris and higher VFF
	Ge–Se↑	Leaky after FF
Increasing pressure	ETH Ge–Ge↑	Higher Ipris and lower VFF
	Ge–Se↓	Minimal impact on Vth
Adding Sb	Se–Se↓	Higher Ipris and lower VFF
	Se–Sb & Sb–Sb↑	Large variability
Adding N	Ge–Ge & Ge–Se↓	Lower Ipris and higher VFF
	Se–Se↑	Leaky after FF
Co-doping Sb + N	Ge–Ge & Se–Se↓	Similar Ipris and lower Vth
	Sb–N↑	Better stability

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The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

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