Hao
Jiang
,
Suruchi
Fialoke
,
Zachariah
Vicars
and
Amish J.
Patel
*
Department of Chemical and Biomolecular Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA. E-mail: amish.patel@seas.upenn.edu
First published on 6th April 2021
Correction for ‘Characterizing surface wetting and interfacial properties using enhanced sampling (SWIPES)’ by Hao Jiang et al., Soft Matter, 2019, 15, 860–869, DOI: 10.1039/C8SM02317D.
![]() | (1) |
An alternative, more robust approach for obtaining h is to approximate the location of the vapor–liquid interface, H, using the half-density isosurface, , for each biased simulation. This isosurface is implicitly defined by
, where ρL,b and ρV,b are the bulk liquid and vapor densities, respectively. In practice, we obtain
at each value zi by fitting 〈ρ(x,zi)〉κ,N* to the sigmoidal function:
, where ρL,fit, dfit, and
are fit parameters. We then average
over the z-axis to obtain
, and compute hint as the slope of
vs. N*. In averaging
over z, the region near the surface (within 1.5 nm of the outermost layer of solid atoms) was excluded because the fluid density in this region tends to be dominated by packing effects rather than interfacial physics.
Fig. 2b and 3b show vs. N* for the surfaces with εSW = 1.94 and 0.001 kJ mol−1, respectively. The results for all the surfaces considered are summarized in Table 1, and highlight that in agreement with eqn (1), hCOM is 13–17% smaller than h. Our use of hCOM thus led to γVL(∝1/h) being overestimated (γCOMVL = 62(2) mJ m−2); using hint instead results in an estimate of γintVL = 56(2) mJ m−2, which is consistent with the values reported in the literature, once differences in the cutoff distances for the Lennard-Jones potential are accounted for. Note that our previous comparison to the literature did not account for such differences. Our use of hCOM also led to kγVL being overestimated by roughly 15%; however, our use of γCOMVL to compute the corresponding wetting coefficients, kCOM, resulted in a fortuitous cancellation of errors, such that approximating h by hCOM did not lead to substantive errors in k; see Fig. 4a. In particular, this error cancellation resulted from the fact that hCOM/hint depends primarily on the system setup geometry (eqn (1)), and is more or less independent of εSW (Table 1).
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Fig. 2 (b) The variation of ![]() |
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Fig. 3 (b) The variation of ![]() |
ε SW (kJ mol−1) | h int × 103 (nm) | h COM/hint |
---|---|---|
0.001 | 1.05(2) | 0.87(3) |
0.5 | 1.02(3) | 0.87(3) |
1 | 1.05(2) | 0.85(2) |
1.5 | 1.05(2) | 0.85(2) |
1.94 | 1.06(3) | 0.83(3) |
2.4 | 1.14(4) | 0.83(3) |
In conclusion, our use of xCOM as a proxy for interface location, H: (i) led to an error of roughly 15% in our estimate of γVL; (ii) did not affect our estimates of k (within error); and (iii) did not change the main conclusions of this work. The authors would like to acknowledge Sean M. Marks for his role in identifying and correcting the issue discussed in this Correction notice.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
Footnote |
† Electronic supplementary information (ESI) for this correction notice showing the derivation of eqn (1) is available alongside the original article, DOI: 10.1039/c8sm02317d |
This journal is © The Royal Society of Chemistry 2021 |