Pengfei Maa,
Jiaying Xu*a,
Chen Wangc,
Changhao Wanga,
Fanxu Meng*b,
Yupeng Xiea and
Shanpeng Wen
c
aCollege of Science, Jilin Institute of Chemical Technology, Jilin 132022, P. R. China. E-mail: xujiaying@jlict.edu.cn
bCenter of Analysis and Measurement, Jilin Institute of Chemical Technology, Jilin 132022, P. R. China. E-mail: mfxoped2019@126.com
cState Key Laboratory on Integrated Optoelectronics and College of Electronic Science & Engineering, Jilin University, Changchun 130012, P. R. China
First published on 29th October 2021
Molybdenum oxide (MoOx) is widely used as a buffer layer in optoelectronic devices to improve the charge extraction efficiency. The oxidation state of MoOx plays an important role in determining its electrical properties. However, there are few studies on the oxidation state to further guide the optimization of the MoOx buffer layer. In this work, inverted-structured polymer solar cells (PSCs) with a MoOx buffer layer were fabricated. Post-air annealing was used to control the cation valence state in MoOx. X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), atomic force microscopy (AFM) and transient photocurrent (TPC) were employed to study the valence state, energy level, morphology of the MoOx layers and the photovoltaic property and charge transfer efficiency of the devices. It was found that the oxidation state was effectively improved by the post-annealing process. As a result, the work function of MoOx was raised and the hole mobility was improved. The open-circuit voltages and the efficiencies of PTB7-Th:PC71BM based PSCs were enhanced from 0.77 V and 8.66% to 0.81 V and 10.01%, respectively. The results show that high oxidation state MoOx provides optimized energy level alignment, reduced defects and better charge transfer efficiency, which is more in line with the requirement of buffer layer materials for optoelectronic applications.
The development of electrode buffer materials and interface modification engineering also plays an important role in the improvement of PCE.20–23 High work function (WF) transition-metal oxides such as molybdenum oxide (MoOx), vanadium oxide, and tungsten oxide are generally used as hole transport layer (HTL) to improve charge extraction efficiency in inverted structure devices.24–27 Among them, MoOx have demonstrated promising potential of non-toxic nature, easy evaporation, high carrier mobility and suitable energy levels.28–31 However, the evaporated MoOx film generally contains oxygen vacancies. These oxygen vacancies provide additional electrons like n-type doping and change the MoOx to lower oxidation state.32–34 As a result, the Fermi level of MoOx shifts toward the conduction band and the WF was decreased, which may decrease the built-in electric field at polymer/MoOx interface and thus lower the open-circuit voltage (VOC) of PSCs. Moreover, the oxygen vacancies may also act as traps for interfacial carrier recombination, resulting in energy losses. Considering the decreased WF of MoOx can also directly affects the level alignment between MoOx and organic active layer heterojunction, the efficiency of charge transfer at polymer/MoOx interface, which is relied on suitable level alignment, will further influenced by the oxidation state.
In this work, we attempt to reduce the performance degradation of PSCs caused by low oxidation state in MoOx layer by air annealing. During the inverted PSCs fabrication process, MoOx films were deposited by thermal evaporation followed by thermal annealing in air atmosphere. It was found that all the parameters of PSCs were improved especially for the VOCs. We further investigated the oxidation state, morphology, energy level structure of the MoOx layers and charge transfer in the devices. This study will provide optimized technological parameters for the fabrication of MoOx layer and theoretical basis for applications in optoelectronic devices.
![]() | ||
Fig. 1 Illustration of the chemical structures of active layer materials, the device structure and the post-air annealing treatment. |
VOC (V) | JSC (mA cm−2) | FF (%) | PCE (%) | ||
---|---|---|---|---|---|
Max. | Aver. | ||||
As-prepared devices | 0.77 ± 0.01 | 17.68 ± 0.33 | 61.33 ± 0.89 | 8.66 | 8.38 |
Post-air annealed devices | 0.81 ± 0.01 | 18.20 ± 0.24 | 66.78 ± 0.57 | 10.01 | 9.84 |
Annealed in glovebox | 0.77 ± 0.01 | 18.11 ± 0.29 | 62.17 ± 0.41 | 8.84 | 8.68 |
Only active layer annealed | 0.77 ± 0.01 | 17.70 ± 0.12 | 56.11 ± 0.51 | 7.79 | 7.68 |
Then we cast the post-annealing treatment in glovebox as control to verify the role of air in the above process. Fig. 3 shows the J–V curves. Unlike air annealing, post-annealing in glovebox did not make difference to the VOCs. Only the JSCs and FFs were slightly larger than the as-prepared devices, which improve the PCEs less than 0.2%. Hence it can be concluded that the air is the key factor in the post-annealing.
![]() | ||
Fig. 3 J–V curves of the PTB7-Th-based PSCs which were as-prepared, post-annealed in glovebox and only active layer annealed. |
To ensure the improvement was resulted from post-annealing of MoOx layer, only active layer annealed devices, which were annealed in air before MoOx layer deposited, were fabricated as control. As Fig. 3 shows, the VOC and JSC of active layer annealed devices were very closed to the as-prepared devices, but the FF was reduced signally. Hence the PCE was also reduced to 7.79%. Therefore, it was MoOx layer which improved by air annealing treatment, and thus contributed to PSCs performance.
The above findings encouraged us to find out how the air annealing affect the MoOx layer. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical compositions and cation oxidation state of MoOx films. The experimental and fitted XPS spectra of Mo 3d state for as-deposited and post-annealed MoOx films were shown in Fig. 4. The Mo 3d peak of post-annealed MoOx shifted to higher binding energy compared to the as-deposited one, which indicate the proportion of Mo6+ in MoOx films was increased after air annealing. According to reported literature, oxygen vacancies can be created during the evaporation in vacuum, so reduced oxidation states (Mo4+ and Mo5+) are created by electrons trapped in such oxygen vacancies.32 By air-annealing treatment, the vacancies were filled with oxygen atoms, the electrons were transferred from Mo atoms, and thus the oxidation states of MoOx was enhanced. The reduced oxygen vacancies will restrain the carrier recombination in interface and promote the hole extraction of MoOx.
The larger proportion of Mo6+ may raise the WF. Then we performed ultraviolet photoelectron spectroscopy (UPS) measurements to verify the energy levels of the MoOx. As Fig. 5(a) shows, the WF of MoOx was raised from 5.12 eV to 5.45 eV after air-annealing. This can be explained by the fact that the oxygen vacancies in MoOx make neighbored Mo6+ gain electrons which can move freely within the film, like n-type doping cases. Combined with the XPS results, it can be inferred that air-annealing transfers Mo5+ or Mo4+ back to Mo6+ and restrains excess electron generation, and thus raise the WF.33 Fig. 5(b) shows the energy level diagram of PTB7-Th and MoOx. When the WF of MoOx raised, the PTB7-Th donor's energy bands were more bended (ΔE2 > ΔE1). Stronger built-in electric field was formed at polymer/MoOx interface, which may contribute to the increased VOCs. Meanwhile, more efficient charge extraction can be expected to reduce the accumulated space charge and restrain the recombination at interface.
![]() | ||
Fig. 5 (a) UPS spectra of MoOx films measured before and after air annealing; (b) energy band diagram at PTB7-Th/MoOx interfaces for MoOx as-deposited (left) and post-annealed (right). |
To further understand how post-annealing affects charge extraction in devices, transient photocurrent (TPC) measurements were carried out from PSCs as-prepared and post-annealed in air. As Fig. 6(a) shows, the transients of post-annealed devices decay more quickly. The characteristic time was decreased from 4.3 μs to 2.7 μs. The hole mobilities were also measured by SCLC method. We fabricated hole-only devices with configuration of ITO/PEDOT:PSS/PTB7-Th:PC71BM/MoOx/Ag and measured the J–V curves which is shown in Fig. 6(b) on a semilogarithmic scale. The post-annealed devices exhibit higher charge transport efficiency. After air annealing, the hole mobility was increased from 1.17 × 10−4 to 2.95 × 10−4. These results indicate that carriers can be better transported out of devices by using post-annealing treatment, in agreement with the XPS and UPS results.
![]() | ||
Fig. 6 (a) The normalized TPC curves of PTB7-Th-based PSCs with as-prepared and post-annealing treated MoOx; (b) dark J–V curves of hole-only devices with as-prepared and post-annealing treated MoOx. |
AFM was employed to study the effect of post-annealing on surface morphology. Fig. 7 shows the AFM images of MoOx surface of as-deposited and air-annealed devices. All the films show uniform and finely intermixed domains, indicating highly blending of phase in active layer. Large donor–acceptor interfaces can be provided for exciton dissociation. Notably, the post-annealed devices exhibit smoother MoOx surface. The mean square surface roughness (Rq) was decreased from 0.91 to 0.76 after post-annealing. The smooth surface is favorable to contact with anode and facilitate charge transport, which may be another reason for the improved performance of post-annealed devices.
In addition, to demonstrate the universal applicability of the air annealing method, we also used PDTS–DTffBT, which we reported before,35,36 as polymer donor to fabricated PSCs and test the effect. The chemical structure of the materials and the J–V curves are showed in Fig. 8(a) and the photovoltaic data are summarized in Table 2. When the PSCs performed with post annealing treatment, the VOC and FF were improved markedly, and the JSC increased slightly, which are the same with the PTB7-Th cases. This suggests that the method may also be applied to PSCs with other polymer donors. Noticing the advanced performance achieved by non-fullerene acceptors, such as the most representative Y6,37–39 we also used the post-air annealing strategy on Y6-based non-fullerene solar cells. PSC devices using PBDB-T-2F as donor and Y6 as acceptor were fabricated. Fig. 8(b) shows the J–V curves and the data are also listed in Table 2. The results show that the post-air annealing strategy is still effective to improve photovoltaic efficiency in Y6 based non-fullerene solar cells, specially for the FF and VOC. The enhancement percentage is even greater in these high-efficiency devices. This is probably because the efficient PBDB-T-2F:Y6 active layers can produce more free carriers and are therefore more sensitive to interfacial energy level mismatch and low efficiency charge extraction.
![]() | ||
Fig. 8 J–V curves of the as-prepared and post air-annealed PSCs based on (a) PDTS–DTffBT/PC71BM and (b) PBDB-T-2F/Y6 and the chemical structure of the materials. |
VOC (V) | JSC (mA cm−2) | FF (%) | PCE (%) | ||
---|---|---|---|---|---|
Max. | Aver. | ||||
PDTS–DTffBT:PC71BM (as-prepared) | 0.69 ± 0.01 | 12.87 ± 0.37 | 53.17 ± 0.80 | 4.91 | 4.74 |
PDTS–DTffBT:PC71BM (post-annealed) | 0.73 ± 0.01 | 13.55 ± 0.22 | 62.33 ± 0.42 | 6.25 | 6.18 |
PBDB-T-2F:Y6 (as-prepared) | 0.79 ± 0.01 | 22.61 ± 0.24 | 62.57 ± 0.61 | 11.43 | 11.09 |
PBDB-T-2F:Y6 (post-annealed) | 0.84 ± 0.01 | 23.72 ± 0.30 | 69.34 ± 0.52 | 14.06 | 13.65 |
TPC measurements were performed using Continuum Minilete TM Nd:YAG laser to shot a 10 ns 532 nm laser pulse with the energy flux of 96.8 μJ cm−2. The laser pulse irradiated through the devices kept at short circuit and the photocurrent was recorded on an oscilloscope (Tektronix MSO 4054) by measuring the voltage drop over a 50 ohm sensing resistor in series with the solar cell.
SCLC measurements were performed using hole-only devices with configuration of ITO/PEDOT:PSS/PTB7-Th:PC71BM/MoOx/Ag. The hole mobilities were calculated by fitting the resulting curves to a space-charge-limited form where SCLC can be described by:
AFM images were obtained using Veeco Dimension 3100 instrument working at tapping mode.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/d1ra06929b |
This journal is © The Royal Society of Chemistry 2021 |