Open Access Article
Wei Wang‡
a,
Gongchun Li‡a,
Yuhao Lib,
Chun Zhana,
Xinhui Lu*b and
Shengqiang Xiao
*a
aState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, P. R. China. E-mail: shengqiang@whut.edu.cn
bDepartment of Physics, The Chinese University of Hong Kong, Sha Tin, Hong Kong SAR 999077, P. R. China. E-mail: xinhui.lu@cuhk.edu.hk
First published on 28th September 2021
As an ending acceptor unit (A) within acceptor–donor–acceptor (A–D–A)-type small molecule acceptors (SMAs), monobrominated 1,1-dicyanomethylene-3-indanone (IC-Br) plays a critical role on developing high-performance SMAs and polymer acceptors from polymerizing SMAs. IC-Br is usually a mixture (IC-Br-m) consisting of positional isomeric IC-Br-γ and IC-Br-δ (bromine substituted on the γ and δ positions, respectively). The positional isomeric effect of these monobrominated ending groups has been witnessed to take an important role on regulating the photovoltaic performance. Fully investigating this isomeric effect of monobromination would be of great value for SMAs and even polymer acceptors. In this study, benefitting from the separation of IC-Br-γ and IC-Br-δ from IC-Br-m with high yields, bis(thieno[3,2-b]cyclopenta)benzo[1,2-b:4,5-b′]diselenophene (BDSeT) was chosen as the D unit and combined with IC-Br-γ, IC-Br-δ and IC-Br-m as A units, respectively. Three A–D–A type SMAs (BDSeTICBr-γ, BDSeTICBr-δ and BDSeTICBr-m) have thus been obtained. When blended with the representative donor polymer of PBDB-T-2Cl to construct bulk heterojunction (BHJ) polymer solar cells (PSCs), BDSeTICBr-γ, BDSeTICBr-δ and BDSeTICBr-m devices offered power conversion efficiencies (PCEs) of 9.42, 10.63, and 11.54% respectively. The result indicated the superior photovoltaic performance of the isomer mixture over the pure isomers, which was contrary to the reported ones that the pure isomers of SMAs used to give a better performance. The superior performance of the BDSeTICBr-m devices was mainly reflected in the improved carrier generation and transport as well as the carrier recombination suppression. In the three PBDB-T-2Cl:SMA BHJ films, a comparable intermixing phase and acceptor domain sizes were observed. Compared with BDSeTICBr-γ and BDSeTICBr-δ, BDSeTICBr-m showed a preferential face-on orientated packing with the closest π–π stacking in its BHJ film, probably accounting for its higher photovoltaic performance than those of the pure isomers. This study provides an alternative sight to develop efficient SMAs with suitably monobrominated IC ending groups for the strategy of polymerizing SMAs.
IC and substituted ICs have been extensively employed in reported A–D–A- and A–DA′D–A-type SMAs as A units. Halogenation on IC has been frequently witnessed to play an important role on developing high-performance SMAs. The strong electron-withdrawing capability of halogens can strengthen the intramolecular charge transfer between the D and A units. Thus, enhanced and broadened absorption is usually induced for the halogenated SMAs, which is beneficial to improve the closed-circuit current (JSC) of the resulted PSCs. Besides, the molecular packing of SMAs can also be enhanced through intermolecular noncovalent interactions, such as X⋯H and X⋯S (X = F, Cl, Br), and thus charge separation and transfer within the PSCs turned to be more efficient.13–17 Bromination on IC has attracted increasing attention over other halogenations (F, Cl, and I) on developing novel SMAs because of the emerging strategy of polymerizing SMAs towards highly efficient polymeric acceptors.18–21 Interestingly, the SMAs with IC-Br were found to offer a superior performance over the ones with a dibrominated IC (IC-2Br).22,23
The asymmetric existence of a single malononitrile group on IC leads to a positional isomerization of monobromination when synthesizing IC-Br from the corresponding monobrominated indanedione and malononitrile.24,25 Thus, IC-Br is usually a mixture (IC-Br-m) consisting of IC-Br-γ and IC-Br-δ (bromine on the γ and δ positions, respectively) (Fig. 1). Initially, He et al. solely obtained IC-Br-γ via the repeated recrystallization of IC-Br-m with a yield of ∼15%. The SMAs of ITIC-2Br-γ and ITIC-2Br-m were then prepared by binding IDTT with IC-Br-γ and IC-Br-m, respectively. The strong interaction between IC-Br-γ and IDTT through Br⋯S and O⋯S led to a cross-aligned network packing in ITIC-2Br-γ crystallites, which was considered to account for the improved electron and hole transport in the PM6:ITIC-2Br-γ PSCs. A higher PCE of 12.05% was thus obtained compared to the PM6:ITIC-2Br-m devices (10.88%).26 Later, Yang et al. reported two SMAs of BTPIC-2Br-5 and BTPIC-2Br-6 with a core of TPBT after gaining IC-Br-γ and IC-Br-δ from IC-Br-m both in ∼15% yield through meticulous selective recrystallization. The PM6:BTPIC-2Br-6 (with IC-Br-δ as ending A) solar cell devices exhibited a higher PCE of 15.01% than 13.76% of the PM6:BTPIC-2Br-5 (with IC-Br-γ as ending A) devices due to their better phase separation and miscibility in the blend.27 These limited results suggest that the precise control of the monobromination position on IC can enable the improvement on the photovoltaic performance of these isomeric SMAs, in which δ-position is usually the better choice. The isomeric effect of monobrominated IC in SMAs on their performance was rapidly transferred into polymerizing SMAs (mostly with D cores of TPBT analogues) by positional isomeric control.28,29 The γ-position based polymers unexceptionally exhibited overwhelming photovoltaic performance. Shortly afterwards, a record PCE of 15.8% was achieved in binary all-PSCs from a γ-positioned polymer acceptor,30 whereas 17.2% in ternary all-PSCs from polymer acceptor-based mixed isomer SMAs.31 Briefly, the isomeric effect of monobromination within both SMAs and acceptors from polymerizing SMAs has played a very important role in regulating their performance, and has not always exhibited consistent impacts among the γ-, δ- and m-positions. A systematic investigation is therefore necessary for SMAs by combining IC-Br-γ, IC-Br-δ and IC-Br-m with the same D unit, respectively, to fully investigate this isomeric effect within SMAs. Besides, more D units need to be introduced for tapping the potential of these three ending groups for developing efficient SMAs with suitably monobrominated IC ending groups. Such exploration could also provide guidance on fully bringing the strategy of polymerizing SMAs into play.
In this study, the separation of IC-Br-γ and IC-Br-δ from IC-Br-m was achieved by acid-assisted silica gel column chromatography with a total yield of around 60% (∼30% each). Bis(thieno[3,2-b]cyclopenta)benzo[1,2-b:4,5-b′]diselenophene (BDSeT) was chosen as a D unit due to its reported outstanding performance in the SMA with IC-Br-m, providing a good reference to systematically investigate the isomeric effect of monobrominated ICs.22,32 Three SMAs of BDSeTICBr-γ, BDSeTICBr-δ, and BDSeTICBr-m were thus obtained by condensing BDSeT with IC-Br-γ, IC-Br-δ, and IC-Br-m, respectively. PBDB-T-2Cl was blended with these three SMAs as the polymer donor, respectively. An optimized PCE of 10.63% was achieved for the PBDB-T-2Cl:BDSeTICBr-γ devices, whereas 9.42% for the PBDB-T-2Cl:BDSeTICBr-δ devices. However, the PBDB-T-2Cl:BDSeTICBr-m devices exhibited the highest PCE of 11.54% among the three SMAs.
:
1) as the eluent with ∼30% yield each, and the corresponding thin layer chromatography (TLC) picture is presented in Fig. S1.† According to the intensity integral of the characteristic peaks in their 1H NMR spectra, the molar ratio of IC-Br-γ:IC-Br-δ in IC-Br-m was calculated to be 45%:55%. BDSeTICBr-γ, BDSeTICBr-δ, and BDSeTICBr-m were then obtained by the Knoevenagel reactions of BDSeT-2CHO with IC-Br-γ, IC-Br-δ, and IC-Br-m, respectively, over 85% yield. BDSeTICBr-γ, BDSeTICBr-δ and BDSeTICBr-m all showed a good solubility over 50 mg mL−1 in o-dichlorobenzene, while 43, 52 and 46 mg mL−1 in chlorobenzene (CB) accordingly. The solubility of BDSeTICBr-γ decreased to only 15 mg mL−1 in chloroform, which is much lower than those of BDSeTICBr-δ (45 mg mL−1) and BDSeTICBr-m (30 mg mL−1). The thermogravimetric analysis (TGA) presents the thermal decomposition temperatures (Td) with 5% weight loss at 354.9 °C, 362.1 °C, and 347.4 °C for BDSeTICBr-γ, BDSeTICBr-δ, and BDSeTICBr-m, as displayed in Fig. S16,† respectively.
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| Fig. 2 Preparation of IC-Br-γ and IC-Br-δ (a), and the synthetic routes of BDSeTICBr-m and BDSeTICBr-γ, BDSeTICBr-δ, respectively (b). | ||
| SMA | D : A (w/w) |
VOC (V) | JSC (mA cm−2) | FF | PCE (%) | Thickness (nm) |
|---|---|---|---|---|---|---|
| a The average values were calculated from at least 15 devices and the highest device performance is shown in brackets.b With 0.5% CN (v/v) in CB and thermal annealing (TA) at 160 °C for 10 min.c TA at 160 °C for 10 min. | ||||||
| BDSeTICBr-γb | 1 : 1 |
0.886 ± 0.002 (0.888) | 17.70 ± 0.28 (17.98) | 0.588 ± 0.003 (0.590) | 9.22 ± 0.55 (9.42) | 115 ± 2 |
| BDSeTICBr-δc | 1 : 1 |
0.886 ± 0.002 (0.888) | 18.36 ± 0.52 (18.80) | 0.633 ± 0.004 (0.637) | 10.29 ± 0.47 (10.63) | 118 ± 2 |
| BDSeTICBr-mc | 1 : 1 |
0.893 ± 0.003 (0.896) | 19.33 ± 0.17 (19.46) | 0.657 ± 0.006 (0.662) | 11.34 ± 0.28 (11.54) | 122 ± 2 |
The external quantum efficiency (EQE) curves and the absorption of the optimized PBDB-T-2Cl:SMA BHJ blends are presented in Fig. 4. The blend films all showed a broad absorption from 300 to 850 nm, so did the photoresponse in their corresponding EQE measurement. The PBDB-T-2Cl:BDSeTICBr-γ blend exhibited a lower EQE value (around 60%) than that of the BDSeTICBr-δ blend (around 70%) from 400 nm to 650 nm. A notable intensity increase starting from 650 nm can be observed in the BDSeTICBr-γ blend, and its maximum EQE value (EQEmax) is ∼75% from 700 to 750 nm, which exceeds that of the PBDB-T-2Cl:BDSeTICBr-δ blend. This increase could be attributed to the strongest light capture ability of the BDSeTICBr-γ blend in the wavelength range due to its highest absorbance and slightly wider absorption. Although slightly weakened and narrowed from 750 to 850 nm, the absorption of the PBDB-T-2Cl:BDSeTICBr-m blend was improved over the other blends from 450 to 750 nm. The PBDB-T-2Cl:BDSeTICBr-m blend correspondingly exhibited a higher EQE value than the other two blends over the absorption range from 450 to 750 nm with the maximum EQE close to 79%. In addition, the integral current densities of the EQE spectra for the BDSeTICBr-γ, BDSeTICBr-δ, and BDSeTICBr-m devices are 17.77, 18.71, and 19.62 mA cm−2, respectively, agreeing with the JSC values obtained from the corresponding individual PSC devices within 3% error.
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| Fig. 4 (a) EQE curves of the PBDB-T-2Cl:SMA blends and the corresponding integrated JSCs; (b) UV-Vis absorption spectra of the PBDB-T-2Cl:SMA blend films. | ||
The charge carrier mobilities were measured by the space-charge-limited current (SCLC) model with single-carrier devices consisting of ITO (150 nm)/ZnO (35 nm)/PBDB-T-2Cl:SMA/Ca (30 nm)/Al (80 nm) for the electron mobility and ITO (150 nm)/PEDOT:PSS (40 nm)/PBDB-T-2Cl:SMA/MoO3 (8 nm)/Ag (100 nm) for the hole mobility. As plotted in Fig. S21,† the PBDB-T-2Cl:BDSeTICBr-δ blend exhibited both higher hole and electron mobilities (μh and μe) of 4.2 × 10−4 and 3.3 × 10−4 cm2 V−1 s−1 (with μe/μh of 0.78), respectively, than those of the PBDB-T-2Cl:BDSeTICBr-γ blend of 3.9 × 10−4 and 2.6 × 10−4 cm2 V−1 s−1 (with μe/μh of 0.67). However, the PBDB-T-2Cl:BDSeTICBr-m blend showed the superior μh and μe of 4.6 × 10−4 and 3.7 × 10−4 cm2 V−1 s−1, respectively, with a more balanced μe/μh of 0.80. The weakened mobilities for the PBDB-T-2Cl:BDSeTICBr-γ blend may result from its inferior film quality and relatively severe charge recombination. The charge recombination behaviour of the PSCs based on PBDB-T-2Cl:SMA blends was assessed by the relationship between JSC and the light intensity (Plight) defined as JSC ∝ Plightα. The fitted slope values for the PBDB-T-2Cl:BDSeTICBr-γ, PBDB-T-2Cl:BDSeTICBr-δ and PBDB-T-2Cl:BDSeTICBr-m blend are 0.928, 0.953 and 0.961, respectively (Fig. 6a). The highest value of the PBDB-T-2Cl:BDSeTICBr-m device demonstrated the lowest degree of bimolecular recombination during the transportation of the charge carrier. Besides, the dependence of Plight on VOC was also measured to further identify the recombination pathway. In general, VOC follows a logarithmic relationship with Plight as VOC ∝ nkBT/q
ln(Plight), where kB, T, and q are the Boltzmann constant, temperature, and elementary charge, respectively. The fitted n is 1.11 for the PBDB-T-2Cl:BDSeTICBr-m blend, which is smaller than 1.60 for the PBDB-T-2Cl:BDSeTICBr-γ blend and 1.25 for the PBDB-T-2Cl:BDSeTICBr-δ blend (Fig. 6b). Thus, the single-molecule recombination in the PBDB-T-2Cl:BDSeTICBr-m blend was suppressed more effectively, which benefits enhancing the carrier transport. In brief, the PBDB-T-2Cl:BDSeTICBr-m blend provided superior efficiency in exciton dissociation, charge transport, and recombination suppression, leading to its improved photovoltaic performance compared to the other two blends.
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Fig. 6 Dependence of JSC (lg JSC ∝ α lg Plight) (a) and VOC (VOC ∝ (nKBT/q)ln Plight) (b) on Plight within the PBDB-T-2Cl:SMA PSCs. | ||
The grazing incidence wide-angle X-ray scattering (GIWAXS) measurement was performed for further microstructural characterization on the neat films of PBDB-T-2Cl and the three SMAs as well as the corresponding PBDB-T-2Cl:SMA blend films. Fig. 7 depicts the GIWAXS profiles along both the out-of-plane (OOP) and in-plane (IP) directions extracted from the diffraction patterns (Fig. S25†) of the PBDB-T-2Cl:SMA blends as well as the corresponding pristine films. The detailed characteristic scattering parameters from the GIWAXS measurements are listed in Table S10.† The observed IP lamellar stacking at qr = 0.285 Å−1 and OOP π–π stacking at qz = 1.67 Å−1 reveals the face-on orientation of polymer crystallites within the neat PBDB-T-2Cl film. In spite of the ambiguous existence of IP π–π stacking signals, the obvious (100) peak at qz = 0.328 Å−1 in the OOP direction unequivocally suggests that there also existed edge-on oriented crystallites in the neat PBDB-T-2Cl film. The coexistence of both edge-on and face-on orientated crystallites of the three SMAs can be observed in their neat films as well. In the BDSeTICBr-δ and BDSeTICBr-m neat films, their stronger (010) π–π stacking peaks in OOP than those in IP suggest a preferred face-on orientation, which is beneficial for promoting a vertical charge transport in the PSCs. The distance (d) of face-on π–π stacking in the BDSeTICBr-m neat film is 3.51 Å at qz = 1.79 Å−1, which was slightly closer than that in the BDSeTICBr-δ neat film (d = 3.63 Å at qz = 1.73 Å−1). In IP and OOP of BDSeTICBr-γ neat film, the similar (100) and (010) diffraction suggested that BDSeTICBr-γ crystallites showed balanced edge-on and face-on orientations. The more ordered stackings in the BDSeTICBr-γ neat film could also be inferred by the more scattering peaks at both qz and qr around 0.41 Å−1 and 0.49 Å−1, respectively. However, it is worth noting that the face-on oriented crystallites in BDSeTICBr-γ (d = 4.33 Å at q = 1.45 Å−1) were much looser than those in BDSeTICBr-δ (3.63 Å) and BDSeTICBr-m (3.51 Å).
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| Fig. 7 GIWAXS IP and OOP profiles of PBDB-T-2Cl and the three SMA neat films as well as their PBDB-T-2Cl:SMA blend films. | ||
In PBDB-T-2Cl:SMA blend films, all of them showed obvious diffraction characteristics from the superposition of the stacking signals of both PBDB-T-2Cl and the corresponding SMAs. As indicated by the green dotted lines in Fig. 7, the characteristic OOP π–π stacking at qz around 1.67 Å−1 and lamellar stacking (0.300 Å−1 and 0.65 Å−1 in IP, 0.330 Å−1 and 0.95 Å−1 in OOP) coexisted in both the neat PBDB-T-2Cl and all BHJ films. It verifies that the stacking of PBDB-T-2Cl in BHJ films basically inherited what happened in its neat film. Thus, the obvious signals of the IP π–π stacking peaks in BHJ films can be rationally ascribed to the contribution from the corresponding SMA molecules. The IP π–π stacking peaks in PBDB-T-2Cl neat film were too weak to be available, while those of the neat SMA films (at around 1.40 Å−1) were much stronger. For the PBDB-T-2Cl:BDSeTICBr-γ blend, both the diffraction peaks at qz (OOP direction) around 0.49 Å−1 and π–π stacking at qr (IP direction) around 1.45 Å−1 retained from that in the neat film of BDSeTICBr-γ. Similarly, the distinctive π–π stacking at qr around 1.39 Å−1 can be observed in the BDSeTICBr-δ neat and blend films, and so is the case at qr around 1.46 Å−1 in the BDSeTICBr-m neat and blend films. Namely, the molecular packings of the donor polymer and the three SMAs in their BHJ films both remained as existed in their neat films. It theretofore can be reasonably recognized that the π–π stacking distance of the face-on orientated crystallites of BDSeTICBr-γ were significantly larger than those of BDSeTICBr-δ and BDSeTICBr-m. This remarkable feature of the looser OOP π–π stacking in the BDSeTICBr-γ crystallites probably deteriorated the vertical charge transport in its BHJ blend, as it was demonstrated in the mobility measurement. In addition, the preferred face-on orientation of the crystallites both BDSeTICBr-m and BDSeTICBr-δ in their BHJ blends could also account for their relatively higher mobilities.
Footnotes |
| † Electronic supplementary information (ESI) available: General information on materials synthesis, NMR and MALDI-TOF mass spectra of compounds, TGA and CV curves, the absorption spectra of donor polymer and acceptor films, conditions for device fabrication and characterization, optimization of photovoltaic parameters, GISAXS patterns and profiles of BHJ blend films, GIWAXS patterns as well as AFM height images and phase images of blend films. See DOI: 10.1039/d1ra05426k |
| ‡ Wei Wang and Gongchun Li contributed equally to this work. |
| This journal is © The Royal Society of Chemistry 2021 |