G.
Qiao
a,
F. X.
Tan
ab,
L. Y.
Yang
*c,
X. F.
Yang
*a and
Y. S.
Liu
*a
aSchool of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu 215500, China. E-mail: xfyang@cslg.edu.cn; ysliu@cslg.edu.cn
bSchool of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, China
cSchool of Mechanical Engineering, Changshu Institute of Technology, Changshu 215500, China. E-mail: lyyang@cslg.edu.cn
First published on 6th January 2021
Correction for ‘Largely enhanced thermoelectric effect and pure spin current in silicene-based devices under hydrogen modification’ by G. Qiao et al., Nanoscale, 2020, 12, 277–288, DOI: 10.1039/C9NR07541K.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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