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Correction: Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices
Kisung
Chae
ab,
Andrew C.
Kummel
*a and
Kyeongjae
Cho
*b
aDepartment of Chemistry and Biochemistry, University of California San Diego, La Jolla, CA, USA. E-mail: akummel@ucsd.edu
bDepartment of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USA. E-mail: kjcho@utdallas.edu
First published on 9th August 2021
Abstract
Correction for ‘Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices’ by Kisung Chae et al., Nanoscale Adv., 2021, DOI: 10.1039/d1na00230a.
The authors regret that an incorrect version of Fig. 7 was included in the original article. The correct version of Fig. 7 is presented below.
 | ||
| Fig. 7 Total energy landscape in MIM and MIS devices. Schematic diagram of energy landscapes as a function of polarization state for (a) an asymmetric MIS FeFET and (b) a symmetric MIM capacitor. (c) The energy difference (ΔE) as a function of DE thickness in MIS with the FE thickness fixed at 2 nm. | ||
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
| This journal is © The Royal Society of Chemistry 2021 |