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Correction: Intrinsic defect formation and the effect of transition metal doping on transport properties in a ductile thermoelectric material α-Ag2S: a first-principles study
Ho Ngoc
Nam
*ab,
Ryo
Yamada
c,
Haruki
Okumura
b,
Tien Quang
Nguyen
b,
Katsuhiro
Suzuki
b,
Hikari
Shinya
def,
Akira
Masago
e,
Tetsuya
Fukushima
eg and
Kazunori
Sato
be
aDepartment of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan. E-mail: honam@mat.eng.osaka-u.ac.jp
bDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
cDivision of Materials Science and Engineering, Faculty of Engineering, Hokkaido University, Kita 13 Nishi 8, Kita-ku, Sapporo, Hokkaido 060-8628, Japan
dResearch Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
eCenter for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
fCenter for Spintronics Research Network, Tohoku University, Sendai, Miyagi 980-8577, Japan
gInstitute of Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan
First published on 6th April 2021
Abstract
Correction for ‘Intrinsic defect formation and the effect of transition metal doping on transport properties in a ductile thermoelectric material α-Ag2S: a first-principles study’ by Ho Ngoc Nam et al., Phys. Chem. Chem. Phys., 2021, DOI: 10.1039/d0cp06624a.
The published version of this manuscript included errors in eqn (8). The correct equation is shown below.
| μS ≤ μbulkS + ΔμS |
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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