Open Access Article
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Correction: High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst
Fengyou
Yang
ab,
Shengyao
Chen
ac,
Huimin
Feng
ab,
Cong
Wang
d,
Xiaofeng
Wang
ab,
Shu
Wang
ab,
Zhican
Zhou
ac,
Bo
Li
ab,
Lijun
Ma
a,
Haiguang
Yang
ab,
Yong
Xie
e and
Qian
Liu
*abc
aCAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China. E-mail: liuq@nanoctr.cn
bUniversity of Chinese Academy of Sciences, Beijing 100049, P. R. China
cMOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute, School of Physics, Nankai University, Tianjin 300457, China
dDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
eDepartment of Physics, Beihang University, Beijing 100083, China
First published on 2nd April 2020
Abstract
Correction for ‘High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst’ by Fengyou Yang et al., J. Mater. Chem. C, 2020, 8, 2664–2668.
The author regret an error in Fig. 4d of the published article; the corrected version of Fig. 4d is shown here. The rest of Fig. 4 and the caption are unchanged.
 | ||
| Fig. 4 (d) The retention time property of the bilayer MoS2 optoelectronic memory. | ||
Please note that these changes do not affect the results and conclusions reported in the article.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
| This journal is © The Royal Society of Chemistry 2020 |