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Correction: Solvent-free vacuum growth of oriented HKUST-1 thin films

Sungmin Hana, Ryan A. Ciufoa, Melissa L. Meyersona, Benjamin K. Keitzb and C. Buddie Mullins*abc
aDepartment of Chemistry, University of Texas at Austin, Austin, Texas 78712-0231, USA. E-mail: mullins@che.utexas.edu
bMcKetta Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231, USA
cCenter for Nano and Molecular Science and Technology, Texas Materials Institute, Center for Electrochemistry, University of Texas at Austin, Austin, Texas 78712-0231, USA

Received 17th December 2019 , Accepted 17th December 2019

First published on 8th January 2020


Correction for ‘Solvent-free vacuum growth of oriented HKUST-1 thin films’ by Sungmin Han et al., J. Mater. Chem. A, 2019, 7, 19396–19406.


The authors regret a labelling error in Fig. 4(b); a peak labelled ‘300’ in the published article should instead have been labelled ‘400’. Moreover, on page 19401, the phrase ‘(200) and (300) planes’ should instead have read ‘(200) and (400) planes’.
image file: c9ta90298h-f4.tif
Fig. 4 (a) The glancing-angle and (b) the in-plane XRD measurements for 2, 5, 10 LBL cycles of HKUST-1 thin films with simulated HKUST-1 XRD patterns (black lines at the bottom of each figure). (c) shows the thickness of these HKUST-1 thin films measured by AFM. Top and lateral views of the 10 cycled HKUST-1 film are also included as insets.

A corrected version of Fig. 4 can be found below.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


This journal is © The Royal Society of Chemistry 2020