Open Access Article
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Correction: Ultrahigh power factor and flexible silver selenide-based composite film for thermoelectric devices
Yao
Lu
a,
Yang
Qiu
b,
Kefeng
Cai
*a,
Yufei
Ding
a,
Mengdi
Wang
c,
Cong
Jiang
a,
Qin
Yao
c,
Changjun
Huang
a,
Lidong
Chen
*cd and
Jiaqing
He
*b
aKey Laboratory of Advanced Civil Engineering Materials, Ministry of Education, School of Materials Science & Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China. E-mail: kfcai@tongji.edu.cn
bMaterials Characterization and Preparation Center and Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China. E-mail: hejq@sustc.edu.cn
cState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China. E-mail: cld@mail.sic.ac.cn
dCenter of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
First published on 13th March 2020
Abstract
Correction for ‘Ultrahigh power factor and flexible silver selenide-based composite film for thermoelectric devices’ by Yao Lu et al., Energy Environ. Sci., 2020, DOI: 10.1039/c9ee01609k.
Following publication of this article the authors noted that the thickness of the films, which affects the electrical conductivity, is affected by the synthesis temperature of the silver selenide-based nanowires. When the experiments were repeated the room temperature was around 10 °C higher than when the original experiments were performed and this may influence the quality of the synthesized nanowires and finally the properties of the films.
The experiments have been redone in order to obtain repeatable data which differs slightly to that published in the original article. The authors wish to replace Fig. 2, 4 and S4 with new figures as follows. This correction does not affect any other data or change any of the scientific conclusions in the article.
Fig. 2 should be replaced by:
 | ||
| Fig. 2 Room temperature TE parameters (a), carrier concentration and mobility (b) of the CuxAgySez films starting from different Cu/Ag/Se nominal molar ratios. | ||
Fig. 4 should be replaced by:
 | ||
| Fig. 4 Temperature dependence of the TE parameters (a), carrier concentration and mobility (b) for the Cu1Ag4Se3 film. | ||
Supplementary Fig. S4 should be replaced by:
 | ||
| Fig. S4 A typical fractured surface SEM image of the composite films. | ||
The authors also wish to replace the data related to Fig. 2, 4 and S4 in the manuscript. For example, “2231.5 μW m−1 K−2” should read as “1593.9 μW m−1 K−2” and “zT ∼ 0.5 at 300 K” should read as “zT ∼ 0.4 at 300 K”.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
| This journal is © The Royal Society of Chemistry 2020 |