Open Access Article
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Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering
Shun
Han
a,
Xiaoling
Huang
a,
Mingzhi
Fang
a,
Weiguo
Zhao
a,
Shijie
Xu
b,
Deliang
Zhu
*a,
Wangying
Xu
a,
Ming
Fang
a,
Wenjun
Liu
a,
Peijiang
Cao
a and
Youming
Lu
a
aShenzhen Key Laboratory of Special Functional Materials, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China. E-mail: deliangzhu@163.com
bDepartment of Physics, and Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Pokfulam Road, Hong Kong, China
First published on 3rd December 2019
Abstract
Correction for ‘High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering’ by Shun Han et al., J. Mater. Chem. C, 2019, 7, 11834–11844.
The authors apologise for the incorrect corresponding email address for Deliang Zhu. The correct affiliation and contact information is as above.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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