Open Access Article
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Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation
Qiang
Wang
a,
Gang
Niu
*a,
Sourav
Roy
a,
Yankun
Wang
a,
Yijun
Zhang
a,
Heping
Wu
a,
Shijie
Zhai
a,
Wei
Bai
a,
Peng
Shi
a,
Sannian
Song
b,
Zhitang
Song
b,
Ya-Hong
Xie
c,
Zuo-Guang
Ye
d,
Christian
Wenger
e,
Xiangjian
Meng
f and
Wei
Ren
*a
aElectronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China. E-mail: gangniu@xjtu.edu.cn; wren@mail.xjtu.edu.cn
bState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
cDepartment of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA
dDepartment of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
eIHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
fNational Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
First published on 17th October 2019
Abstract
Correction for ‘Interface-engineered reliable HfO2-based RRAM for synaptic simulation’ by Qiang Wang et al., J. Mater. Chem. C, 2019, DOI: 10.1039/c9tc04880d.
There was an error in the author list of this published article.
The corresponding authors for this paper are Gang Niu (gangniu@xjtu.edu.cn) and Wei Ren (wren@mail.xjtu.edu.cn). The footnote indicating that Qiang Wang and Gang Niu contributed equally to the work was not intended.
The corrected author list and notations are shown here.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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