Open Access Article
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Correction: Aliovalent A-site engineered AgNbO3 lead-free antiferroelectric ceramics toward superior energy storage density
Nengneng
Luo
*af,
Kai
Han
a,
Fangping
Zhuo
b,
Chao
Xu
c,
Guangzu
Zhang
d,
Laijun
Liu
e,
Xiyong
Chen
a,
Changzheng
Hu
e,
Huanfu
Zhou
e and
Yuezhou
Wei
*a
aGuangxi Key Laboratory of Processing for Non-ferrous Metallic and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China. E-mail: luonn1234@163.com; yzwei@gxu.edu.cn
bDepartment of Chemistry, Tsinghua University, Beijing 100084, China
cDepartment of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR
dSchool of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
eCollege of Materials Science and Engineering, Guilin University of Technology, Guilin 541004, China
fCenter on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
First published on 14th June 2019
Abstract
Correction for ‘Aliovalent A-site engineered AgNbO3 lead-free antiferroelectric ceramics toward superior energy storage density’ by Nengneng Luo et al., J. Mater. Chem. A, 2019, DOI: 10.1039/c9ta02053e.
The authors regret an error in the published article. The phrase “In contrast, the ΔGFE–AFE for the FE-to-AFE phase transition is flattened, corresponding to decreased EA” should instead have read as follows: “The ΔGFE–AFE for the FE-to-AFE phase transition, in contrast, is flattened, which also contributes to increased EA”.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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