Maximilian
Schaube
,
Rotraut
Merkle
* and
Joachim
Maier
Max Planck Institute for Solid State Research, Stuttgart, Germany. E-mail: r.merkle@fkf.mpg.de
First published on 20th August 2019
The importance of point defects for oxygen surface reaction kinetics on doped ceria is demonstrated by pulsed isotope exchange. The oxygen surface exchange reaction on 20 different Gd/Pr/Tb, and Nb single and co-doped ceria samples is studied from 500–850 °C in 10–0.1% O2 atmosphere. The highest rates are measured when both oxygen vacancies and redox-active centers are available. Gd-doping leads to exchange rates which are proportional to the concentrations of Gd and oxygen vacancies. Pr-doped ceria exhibits a much stronger variation of the exchange rate – by almost five orders of magnitude from 0.6 to 20 mol% Pr doping – emphasizing the importance of redox-active centers. The equilibrium exchange rates are low for Nb, Nb/Pr, and Nb/Gd co-doped ceria, emphasizing the important role of oxygen vacancies for oxygen dissociation and incorporation. The oxygen partial pressure dependence indicates that molecular oxygen species are involved in the rate-determining step (in addition to oxygen vacancies).
So far, isolated studies of the oxygen exchange kinetics were performed on Gd, Pr, Tb, and Nb doped ceria by oxygen isotope exchange line profiling (IELP),7–13 isothermal isotope exchange (IIE),14 isotope exchange gas analysis (IEGA)15 pulsed isotope exchange (PIE),16,17 electrochemical impedance spectroscopy (EIS)18,19 (ref. 19 refers to reducing conditions in H2 atmosphere), optical absorption spectroscopy,20,21 mass relaxation,22,23 and other methods.21,24,25
Regarding the reaction mechanism, experimental and ab initio studies indicate that on reduced ceria, adsorbed superoxide and peroxide is formed easily, that adsorption of oxygen in an oxygen vacancy is energetically favorable,26–29 and that this occurs via superoxide and peroxide intermediates. Nevertheless, actual dissociation of molecular oxygen species is studied only rarely. The work in ref. 28 indicate that even for a superoxide adsorbed in an oxygen vacancy still a perceptible dissociation barrier must be overcome. Point defects such as oxygen vacancies or redox-active dopants naturally represent catalytically active centers for surface reactions (see, e.g., ref. 30–36).
It is obvious that oxygen vacancies and electronic dopants are required to carry out oxygen incorporation. But which of these defects limits the reaction depends on the materials classes and has yet to be clarified. This knowledge may then serve to purposefully tune the materials properties for application in e.g., electrochemical devices or as catalyst.
Surprisingly, to the knowledge of the authors there is no experimental study that systematically investigates the oxygen surface exchange reaction on a variety of doped ceria materials and an extended range of oxygen partial pressures by the same method and identical sample preparation to elucidate the influence of acceptor/donor and mixed valence dopants on the oxygen exchange kinetics and reaction mechanism. In particular, the present investigation covers a large dopant concentration range from 0.6–22 mol% and allows for a direct comparison of dopants without and with redox-activity. The method of choice in the present study is pulsed isotope exchange:37 the sample is exposed to an isotope enriched oxygen pulse, and the resulting mixture of 32O2, 16O18O, and 36O2 isotopologues quantified by mass spectroscopy. This technique enables a fast screening of the oxygen incorporation reaction rate as a function of dopant content and oxygen partial pressure in the absence of any precious metals, and yields additional mechanistic information compared to IELP.37–41
For pulsed isotope exchange, 1 g powder at a time was compacted into dense pellets by spark plasma sintering (SPS, FCT-DP D 5/2, FCT Systeme) at 1000 °C for 3 min in a graphite mold with 10 mm diameter at 6 kN pressure. The pellets were calcined at 800 °C for 8 h and annealed at 1400 °C for 8 h in air with a heating/cooling rate of 100 °C h−1. Their density was determined using a 5 mL pycnometer with water as solvent. The pellets were crushed and sieved to a particle size between 60 and 100 μm, and fired again at 1400 °C for 8 h with 100 °C h−1 in air. The resulting particles showed a smooth surface (Fig. 2 in ESI†) and the particle size did not change.
(1) |
(2) |
(3) |
Oxygen vacancies can also be introduced by doping with an acceptor of fixed valence such as Gd3+, yielding an oxide ion conducting electrolyte material (see, e.g., ref. 50–52):
(4) |
The amount of is fixed according to , and the oxygen partial pressure dependency in this case is found to be ±1/4 for holes and excess electrons . It is important to note that created via such acceptor doping do not lead to an enhanced conduction electron concentration (rather to an increased hole concentration owing to the equilibrium in eqn (1)). Since they can incorporate oxide ions, represent acidic centers31 (rather than Lewis basic centers as suggested in ref. 33).
Donor doping, e.g., by Nb5+, leads to suppression of and formation of oxygen interstitials under oxidizing conditions,
(5) |
(6) |
In the temperature and oxygen partial pressure regime probed by PIE, both defect compensations (5) and (6) occur simultaneously,54 but oxygen interstitials are the dominating defects.53 The solubility limit of Nb in ceria was found to be 3 mol%.55 For acceptor–donor co-doped materials with equal dopant concentration, the oxygen defect concentration is minute.
Praseodymium- as well as terbium-doped ceria show similar defect chemistry56 and much stronger redox activity compared to Ce. Thus the intrinsic incorporation reaction (1) is complemented by a redox reaction, e.g., in the case of Pr:
(7) |
Such a deep acceptor situation involves electronic and ionic defects. A high amount of Pr-doping introduces increased electronic conductivity due to small polaron hopping between Pr3+/Pr4+ and Ce4+, making this material a mixed electronic and ionic conductor (MIEC).18,42,57,58Fig. 1 shows the concentration for 2, 6 and 20PDC calculated from TG measurements according to eqn (7). In the regime of , the electroneutrality condition is , and both concentrations scale with p(O2)−1/6. At higher T and/or lower p(O2), the dependence flattens and . Under the conditions of the PIE experiment (blue shaded area in Fig. 1), about 15–60% of the Pr is in the 3+ state, and a corresponding concentration is present. The actual ratio varies a bit with p(O2) and T, but the dependence on [Pr]tot is small. Thus, overall the relation is a reasonably good approximation to describe the variation of with [Pr]tot, which varies by 1.5 orders of magnitude between the lowest and highest doped samples.
Since the surface represents a severe structural distortion, the absolute defect concentrations differ from the respective bulk values. Typically it is expected that, owing to the smaller number of bonds to cations to be broken, form thermodynamically more easily in the surface layer of an oxide. This is supported by DFT calculations, which yield a decreased formation energy in the surface layer of ceria depending on the exposed facets, where ΔH0red increases in the order (110) < (100) < (111).60 Additionally, an excess surface charge and a subsurface space charge layer may appear. As long as the type of the majority carrier does not change relative to bulk and the surface charge (if present) is approximately p(O2) independent, the p(O2) dependence of the defects will be the same in bulk and surface layer.
Direct measurements of surface defect concentrations (preferably under conditions of well-defined T and p(O2)) are very challenging, thus only few data are available. For ceria-based materials, the following three observations have to be considered:
(i) For nanosized undoped ceria powder or ceramic samples, modified p(O2) dependencies for oxygen deficiency and/or n-type conductivity were found, which have been interpreted by pronounced defect association of e′ with (which is equivalent to a less than doubly charged oxygen vacancy).63–65
(ii) For thin films of undoped and Sm-doped ceria in strongly reducing atmosphere, ambient-pressure XPS indicated strongly enhanced surface and concentrations and correspondingly modified p(O2) dependencies.66–68
(iii) For a PDC thin film on a YSZ substrate, at the surface was measured by ambient-pressure XPS while the effective p(O2) was tuned by a d.c. bias, and an increased surface with decreased p(O2) dependence was found.69
The relevance of observation (i) with modified defect charge caused by electron trapping in the oxygen vacancies is considered to be small for the present study; the acceptor doping leads to a high oxygen vacancy and low conduction electron concentration, so association cannot significantly alter the average oxygen valence state. The measurements of undoped and Sm-doped films in case (ii) yield strongly increased surface oxygen vacancy and concentrations compared to bulk (in strongly reducing conditions), from which a decreased ceria reduction enthalpy by 1 eV was deduced. Such a decrease agrees well with earlier findings from DFT (decrease by 0.8 eV for (111) surface to 1.4 eV for (110) surface;60 and experiments on nanocrystalline ceria samples.70 Despite the more increased surface vacancy concentration, the excess and concentrations match almost exactly, so the charge of the surface layer is rather small.71 For comparably high p(O2) of 10−4 bar at 450 °C, the surface concentration of remains very low,71 much smaller than the acceptor concentrations used in the present work. Thus, we can reasonably assume that for the present GDC samples, bulk and surface layer are in the same defect chemical regime, with and as majority defects. Based on this, a similar p(O2) dependence of the minority defect species is expected in the present work as in GDC bulk, but with increased absolute values (at 700 °C, a decrease of ΔH0red by 1 eV corresponds to an increase of by a factor of approx. 400). Finding (iii), is not too surprising, since Pr is more easily reduced than Ce. However, the observation of a modified p(O2) dependence even under conditions where is relatively small remains unexplained in ref. 69.
In the ESI† we discuss in more detail specific situations that can occur at the surface, and we derive the possible oxygen partial pressure dependences. Overall we conclude that in the present experimental conditions for GDC the surface concentration is largely determined by the acceptor doping, and the p(O2) dependence of minority species is similar as in bulk. PDC might exhibit a smaller p(O2) dependence of in the range of 0.1 instead of 1/6.
(8) |
The surface area of the particles is denoted by S, nO2 is the molar amount of oxygen in the gas phase, t denotes time, and 18fg,i and 18fg,e are the gas phase fraction of 18O in the pulse at the inlet (97 at% 18O) and exit of the reactor (calculated according to 18f = 36f + 0.534f where 36f and 34f are the fractions of 36O2 and 34O2 in the gas phase). The mean residence time τ in the reactor was calculated with τ = V/ν (V is the gas phase volume in the reactor and ν the volume flow rate of oxygen passing through the reactor). has the unit of oxygen atoms per time and area and is related to the effective rate constant of the surface exchange reaction k* [cm s−1] by39
(9) |
This analysis of does not require the assumption of a specific reaction mechanism. From the variation of with p(O2) and dopant/defect concentrations several important conclusions can be drawn. If a dissociative-adsorption reaction is rate-determining, that reaction determines the overall exchange rate . For example, the oxygen incorporation may be determined by the rate of dissociative-adsorption (eqn (10), with a fast oxygen adsorption as a pre-equilibrium) which involves electronic defects. Due to microscopic reversibility principle, close to equilibrium the forward and backward reactions must have identical overall dependences on p(O2) and point defect concentrations. It suffices to analyze just the forward rate:
(10) |
The exponent m denotes the influence of point defects on the overall oxygen partial pressure exponent n. Since molecular oxygen is involved, is proportional to p(O2)n with n ≤ 1. The exponent n can be lowered to 1 − m through the influence of point defects as exemplified in section 3 of the ESI,†e.g., if [h˙] ∝ p(O2)1/4 in case of GDC appear before the actual rate-determining elementary step (rds). A different p(O2) dependence can be obtained if instead incorporation of a single oxygen ad-atom is the rds (see eqn (12)). Then for the equilibrated dissociative-adsorption reaction, one can write the mass action law:
(11) |
The overall exchange rate equals the rate of oxygen ad-atom incorporation. By considering eqn (11), one obtains that is proportional to p(O2)n with n ≤ 0.5:
(12) |
This concept is generally applicable and enables one to distinguish whether molecular or atomic oxygen is involved in the rds. We assume here ideal behavior; non-idealities might nevertheless be present at high dopant concentrations. However, sufficient quantitative data are lacking, and the effect on the p(O2) dependence of is expected to be rather modest.
Fig. 2 (a) Grain size of doped ceria samples as function of total dopant content. (b) Lattice parameter a as function of dopant content. |
XRD measurements on doped ceria particles confirmed a phase pure, cubic fluorite type crystal lattice (lattice parameters in ESI†). For Gd-doped ceria, the lattice parameter follows Vegard's law,74 indicating a solid solution with an increase corresponding to the larger ion radius of Gd3+ (Ce4+ 0.97 Å, Gd3+ 1.053 Å)75 (Fig. 2b). The slight decrease of the lattice constant for PDC indicates that the average Pr oxidation state is closer to 4+ rather than 3+ in the as-prepared samples (Pr4+ 0.96 Å, Pr3+ 1.126 Å)75 which is in accordance with the TG data in Fig. 1 and with defect model calculations.57
XPS measurements on 6GDC, 20GDC, 6PDC, 20PDC, and 6P6NDC (Fig. 3) revealed a moderate accumulation of dopants at the particle's surface of up to 30% relative to bulk values after the second annealing step at 1400 °C. The strength of the dopant segregation increases according to [Gd] < [Pr] < [Nb]. TEM/EDX analysis on 6PDC particles indicated also a Pr accumulation at the grain boundaries which is stronger than for the surface (ESI†).
Fig. 3 Dopant content at the surface of the PIE particles (double annealed at 1400 °C) plotted against the nominal dopant concentration. |
In Fig. 4 the fractions of the molecular oxygen isotopologues in the pulse, measured at the exit of the packed bed reactor, are plotted against the reactor temperature. With increasing temperature, 18O starts to incorporate into the sample indicated by a decrease of 36f. Due to the fact that the oxygen stoichiometry is in equilibrium, the same amount of 16O needs to be released from the sample in the form of 32O2 or 34O2 depending on the underlying reaction mechanism.
Fig. 4 Molar oxygen isotopologues fractions (f) measured by mass spectrometry on the gas exiting the reactor; all measurements in 10% O2 atmosphere. |
Results obtained at temperatures above 800 °C should be interpreted with care, since in this regime the Al2O3 reactor itself showed oxygen exchange activity (Fig. 4, close symbols), mainly by isotopic scrambling at the surface as indicated by the high 34O2 fraction. Negative mole fractions for 32O2 originate from some unavoidable smearing of the 18O pulse: at the edges of the pulse, residual 32O2 can scramble at the reactor surface with 36O2 yielding 34O2, as indicated by peak splitting of the 34O2 MS signal. Undoped CeO2 (Fig. 4, green symbols) showed similar low oxygen exchange activity as the empty Al2O3 reactor. Thus, for undoped ceria and 2NDC no activation energies are given and only an upper limit of can be indicated in Fig. 7.
All Gd or Pr/Tb single- and co-doped ceria samples measured in this study are more active for oxygen exchange than undoped CeO2. On 0.6GDC the oxygen incorporation begins at around 750 °C. This onset temperature shifts to lower values with increasing [Gd], so that for 20GDC the incorporation commences already at 600 °C. All GDC samples show a pronounced formation of 34O2, which points to a slow incorporation reaction rate relative to the rates of oxygen adsorption and dissociation.
The increase of the exchange activity on PDC samples is even more pronounced than on GDC. On 20PDC, oxygen incorporation was observed already at 500 °C. On 0.6PDC the conversion at high T is in the same low range as for undoped CeO2 and the empty reactor. The onset of perceptible oxygen conversion quickly shifty to lower T for higher Pr dopant contents. The absence of 34O2 at >2 mol% Pr or Tb suggests that dissociated oxygen species incorporate faster into the bulk compared to GDC with similar dopant content.
2NDC and co-doped 6P6NDC/6G6NDC were less active compared to GDC and PDC/TDC samples. Furthermore, the formation of 34O2 on PNDC was less distinct than for GNDC. Since Nb as donor dopant decreases the oxygen vacancy concentration or may even lead to oxygen interstitials, these results show that oxygen vacancies are crucial for the oxygen exchange reaction.
Fig. 5 Temperature dependence of the equilibrium exchange rate for doped ceria samples, measured in 10% O2. |
Fig. 6 Activation energies calculated from the temperature dependence of the equilibrium exchange rate , in 10% O2. |
The trends of oxygen exchange rate with dopant type and concentration can best be compared at a fixed temperature (700 °C), as shown in Fig. 7. Since undoped CeO2 showed similar low oxygen exchange activity as the empty Al2O3 reactor no activation energies are given and only an upper limit of can be indicated in Fig. 7.
For GDC the condition holds for the bulk. For the vacancy concentration at the surface, different absolute values but still an approximate proportionality to the bulk Gd concentration is expected (see Section 3.1). Fig. 7a shows that the exchange rate is approximately proportional to the bulk concentration . This strongly indicates that one is involved before or in the rds step of the oxygen exchange reaction. The importance of for the water splitting reaction on ceria has recently been emphasized by XPS measurements under near-ambient conditions.68
In contrast, for PDC increases more strongly according to (Fig. 7b), which overall increases by almost 5 orders of magnitude relative to undoped ceria. Since rather extensive extrapolations are required to obtain values for all PDC samples at one common T, the numerical value of this slope might carry some uncertainty. Nevertheless, such a strong dependence on Pr content suggests that in addition to the increased concentration (despite the mixed Pr3+/Pr4+ valence, is roughly proportional to the overall Pr content, see Section 3.1), the inherent redox activity of Pr3+/Pr4+ itself also affects the exchange rate. Despite a small offset, TDC shows a similar strong increase of , indicating that redox-active dopants tend to activate the oxygen incorporation. This is in line with several observations in literature that mixed conducting fluorites or perovskites exhibit faster oxygen exchange than purely ionic or electronic conductors.38,79–84
Similar trends as for the singly Gd or Pr doped samples are also found for Gd and Pr co-doped samples. While additional Gd doping of PDC samples (Fig. 7b) has almost no effect, Pr co-doping of GDC perceptibly increases (Fig. 7a). Nb co-doping with Nb concentration matching that of Gd or Pr leads to exchange rates that are in the region of undoped ceria. This strongly supports the assignment that the rate increases with increasing [Gd] is related to the increased and not to some specific effect of the Gd cations.
Further important information on the reaction mechanism is obtained from measurements of as function of oxygen partial pressure (Fig. 8). For all samples in the present study, the exponents n for the p(O2) dependence are always above 1/2. As discussed in Section 3.3, this means that molecular oxygen species are involved in the rds of oxygen incorporation.
Let us summarize the key experimental observations regarding the oxygen exchange mechanism:
(i) On GDC, and on PDC (with ), which indicates that at least one is involved in or before the rds.
(ii) For both systems therefore, molecular oxygen species are involved in the rds.
(iii) The fact that the exponent of the overall p(O2) dependencies is below one indicates that defects with negative p(O2) dependency are involved.
Based on this we can suggest for GDC the following mechanism depicted in Fig. 9 which is consistent with the measured data. From the observation that in addition to molecular oxygen species also are involved in/before the rds, the dissociation without is most likely ruled out as a possible reaction mechanism for GDC as well as for PDC.
Adsorption including a first electron transfer is expected to be fast, since such chemisorption processes occur already at room temperature or below (see, e.g., ref. 26, 29 and 85). For reduced ceria26 and redox-active perovskites such as (La,Sr)MnO3±δ superoxide as well as peroxide species are formed.86 However, the latter are regarded as less probable for GDC (which has a large bandgap) under oxidizing conditions. On pre-reduced CeO2 nanocrystals, at 173 K a concentration of adsorbed molecular oxygen species of about 2–3 μmol O2 per m2 was found (corresponding to surface coverage of about 6%),29 but at the higher T and p(O2) of the PIE experiment significantly lower values are expected.
For perovskites87 as well as for ceria,28 DFT calculations indicate that the dissociation of molecular oxygen species is facilitated when it is first incorporated into an oxygen vacancy. Thus we consider oxygen exchange to proceed via an encounter of O2− and (step 2; at this stage we cannot distinguish which of these species migrates towards the other), incorporation of O2− into the (step 3), and actual dissociation (step 4). For perovskites such as (La,Sr)MnO3±δ or Ba0.5Sr0.5Co0.8Fe0.2O3−δ there is evidence that rather a surface oxygen vacancy approaches the adsorbed oxygen species than vice versa.80,87
On the basis of the present experimental data, one of steps 2–4 is rate-determining. Since the overall p(O2) dependence indicates molecular oxygen species in the rds, the encounter of O− and in step 5 cannot be limiting. This implies that either the concentration of atomic oxygen is higher than that of O2− (as observed for (La,Sr)MnO3±δ;87 leading to a shorter diffusion length to ), or that the mobile species is the adsorbed oxygen with a higher surface mobility for O− compared to O2−. The fact that the incorporation of oxygen into (step 6) is not the rds may indicate that also the similar step 3 is not limiting. The charges of the oxygen intermediates cannot be directly concluded from the measured p(O2) and dependences, they are tentatively assigned (in particular for adsorbed atomic O species the charge may also depend on the actual surface termination).
The overall p(O2) dependence of contains also contributions from the involved point defects (a detailed deviation is found in the ESI†). Assuming that just one hole is involved in the fast pre-equilibrium in eqn (13) before the rds, one obtains for :
(13) |
For GDC with fixed concentration, [h˙] ∝ p(O2)1/4 holds in the bulk, which yields . This fits well to the measured overall p(O2) dependence showing an exponent of 0.6–0.8. From these values it follows that in addition to one , at least one electron is consumed or one hole is produced before or in the rds. Regarding the dependence of on , one has to consider that the hole concentration depends on by eqn (2) according to , resulting in , in contrast to the measured relation for GDC. A tentative consideration to resolve this discrepancy is that enters the rate expression as a consequence of the chemisorption equilibrium in eqn (13). If the system behaved ideally, K1 would be independent of [Gd] and , but [O2−] would decrease with increasing [Gd] and . However, the decreased effective cation charge with increasing Gd content might make the O2 chemisorption increasingly favorable (deviation from ideal behavior) such that overall the O2− concentration becomes approximately independent of . Alternative mechanisms with two involved before or in the rds (leading to stronger dependencies of ) are considered less probable as they require the encounter of adsorbed oxygen with two .
A striking feature for PDC is that increases over-proportionally with [Pr]. It is reasonable to assume that a part of the dependence originates in one involved before/in the rds (as was found for GDC) which yields a contribution of . The remaining dependence suggests a direct involvement of the redox couple Pr3+/Pr4+ in the oxygen exchange reaction. This is highly plausible as in PDC the n-type electronic carriers are localized in the form of (in contrast to GDC where the n-type carriers are independent of the dopant). Consequently, the formation of charged molecular oxygen adsorbates in the fast proceeding equilibrium should be formulated as
(14) |
(15) |
This means that the O2− and O22− adsorbate concentrations should scale with and . It is not easy to estimate whether this ratio (in the surface layer of the sample) exhibits a pronounced systematic variation with [Pr]tot. On the other hand, one may expect that because of the possible valence change, sites close to Pr3+/4+ are preferred adsorption sites for O2− and O22−, which could result in adsorbate concentrations that systematically increase with [Pr]tot. This would then also increase the subsequent dissociation rate. Another aspect is that the character of the electronic defects changes drastically with [Pr]tot, from isolated Pr3+/4+ ions at low [Pr]tot to praseodymium states forming an impurity band with non-vanishing band width at high [Pr]tot.69 This may lead to more negative adsorption energies for O2− and O22− and further increases the dependency of on [Pr]. The hypothesis of Pr band formation is supported by the strongly nonlinear increase of electronic conductivity (ESI Fig. 6,†cf. also 3 × 10−5 S cm−1 for 1PDC to 0.02 S cm−1 for 10PDC at 800 °C in air18). At present, we cannot draw a final conclusion about the atomistic origin of the strong [Pr]tot dependence of .
Another peculiarity of 6PDC and 20PDC (as well as of 6TDC and 20TDC) is that they show much lower formation of 34O2 compared to 6GDC, 20GDC despite higher equilibrium exchange rates. This might point towards a higher mobility in bulk but also between bulk and surface layer. According to defect chemical data, 10PDC57 has a moderately higher mobility than single crystal 10GDC (measured by 18O isotope exchange and SIMS line scan),7 which is in agreement with MD simulations.88 Nevertheless, this should be further confirmed in additional bulk diffusion measurements.
Fig. 10 Temperature dependence of k* (a) for GDC of this study and literature data.7,8,11,15,16 (b) For PDC of this study and literature data.12,16,18,23–25 The values k* were calculated by . |
For PDC (Fig. 10b) the literature data scatter by almost six orders of magnitude. The present PIE data for 20PDC and isothermal isotope exchange (IIE) of the same 20PDC particles are of comparable magnitude. They are also similar to the 20PDC value of Yoo, to the exchange rate for 10PDC measured by mass relaxation of thin films deposited on a piezoelectric GaPO4 microbalance crystal23 (converted to k* using a mean thermodynamic factor of ω = 200, determined by TGA on 20PDC particles, T range: 500–700 °C), and to values for Pr6O11 from IELP.12 However, kq ≈ k* values from impedance spectroscopy of 10PDC films on YSZ substrates18 have a similar activation energy, but are about two orders of magnitude lower. The smallest exchange rates were found by Ma et al.24,25 by in situ strain measurements on 10PDC thin films on YSZ substrates and by Kim et al.21 by in situ optical absorption relaxation.
This comparison demonstrates that the surface exchange rates are extremely sensitive to experimental details. Since in this study the ceramic samples were never exposed to Ag, Pt, or other precious metals which are known to catalyze the oxygen exchange reaction, such an effect is not the origin of the high equilibrium exchange rates. Bucher et al.89 demonstrated that SiO2 from any source in the experimental set-up such as quartz glass (in particular when the gas phase is not absolutely dry) can severely decrease the surface exchange rate of mixed-conducting perovskites by formation of a thin glassy or silicate layer. Even stronger degradation by more than 1.5 orders or magnitude was found by Zhao et al.90 for 10PDC films, which might be related to the fact that ceria does not form silicates (nucleating only at specific sites), but instead silica probably homogeneously covers large parts of the surface.
Footnote |
† Electronic supplementary information (ESI) available: The supplementary contains details of PIE quantification, a discussion of the p(O2) dependence of surface defect concentrations, additional experimental data (lattice parameters, XRD pattern, SEM, EDX at grain boundaries, electrochemical impedance spectroscopy, isothermal isotope exchange, and exponential prefactors). See DOI: 10.1039/c9ta05908c |
This journal is © The Royal Society of Chemistry 2019 |