Open Access Article
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Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature
Hyukjoon
Yoo
,
Young Jun
Tak
,
Won-Gi
Kim
,
Yeong-gyu
Kim
and
Hyun Jae
Kim
*
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea. E-mail: hjk3@yonsei.ac.kr
First published on 20th September 2018
Abstract
Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.
There were errors in the details shown for ref. 2, 6 and 9 cited in this article. The corrected references are shown below as ref. 1–3, respectively.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
References
- J. Sheng, H.-J. Jeong, K.-L. Han, T. Hong and J.-S. Park, J. Inf. Disp., 2017, 18, 159–172 CrossRef.
- Y. J. Tak, S. P. Park, T. S. Jung, H. Lee, W.-G. Kim, J. W. Park and H. J. Kim, J. Inf. Disp., 2016, 17, 73–78 CrossRef.
- S. Hong, J. W. Park, H. J. Kim, Y.-G. Kim and H. J. Kim, J. Inf. Disp., 2016, 17, 93–101 CrossRef.
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