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Correction: Electronic and transport properties of Li-doped NiO epitaxial thin films

J. Y. Zhang a, W. W. Li b, R. L. Z. Hoye b, J. L. MacManus-Driscoll b, M. Budde c, O. Bierwagen c, L. Wang d, Y. Du d, M. J. Wahila e, L. F. J. Piper e, T.-L. Lee f, H. J. Edwards g, V. R. Dhanak g and K. H. L. Zhang *ab
aDepartment of Chemical and Biochemical Engineering, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, P. R. China. E-mail:
bDepartment of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK
cPaul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, DE-10117 Berlin, Germany
dPhysical Sciences Division, Physical & Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA
eMaterials Science & Engineering, Binghamton University, Binghamton, New York 13902, USA
fDiamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
gDepartment of Physics, University of Liverpool, Liverpool L69 3BX, UK

Received 12th March 2018 , Accepted 12th March 2018

First published on 22nd March 2018

Correction for ‘Electronic and transport properties of Li-doped NiO epitaxial thin films’ by J. Y. Zhang et al., J. Mater. Chem. C, 2018, 6, 2275–2282.

The authors regret the omission of an acknowledgement of funder support, and would like to add the following sentence to the acknowledgements section.

“Transport measurements performed by L. W. and Y. D. were supported by the Early Career Research Program through the U.S. Department of Energy, Office of Basic Energy Sciences.”

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

This journal is © The Royal Society of Chemistry 2018