Mohamed
Ebaid
a,
Jung-Wook
Min
a,
Chao
Zhao
a,
Tien Khee
Ng
a,
Hicham
Idriss
*b and
Boon S.
Ooi
*a
aPhotonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia. E-mail: boon.ooi@kaust.edu.sa
bSABIC-Corporate Research and Development Center (CRD) at KAUST, Thuwal 23955, Saudi Arabia. E-mail: IdrissH@sabic.com
First published on 20th June 2018
Correction for ‘Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to hydrogen’ by Mohamed Ebaid et al., J. Mater. Chem. A, 2018, 6, 6922–6930.
The corrected text, on page 6927 of the originating article, should read as follows:
“The InGaN NWs grown on Ti achieved an ABPE of 0.23% at 0.5 V vs. RHE compared to only 0.01% at 0.86 V vs. RHE for those grown on the Si-substrate. Hence, an approximately 23 times increase in power conversion efficiency was achieved by using metallic Ti as a charge extraction/collection interlayer.”
The corrected version of Fig. 4 is shown below (Fig. 4(b) has been corrected; the other panels remain unchanged):
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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