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DOI: 10.1039/C8RA90034E (Correction) RSC Adv., 2018, 8, 16419-16419

Correction: Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells

Svette Reina Merden Santiagoa, Septem P. Caigasa, Tzu-Neng Lina, Chi-Tsu Yuana, Ji-Lin Shen*a, Ching-Hsueh Chiub and Hao-Chung Kuoc
aDepartment of Physics, Center for Nanotechnology, Chung Yuan Christian University, Chung-Li 32023, Taiwan. E-mail: jlshen@cycu.edu.tw
bDepartment of Electronic Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan
cDepartment of Photonics, Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan

Received 25th April 2018 , Accepted 25th April 2018

First published on 3rd May 2018

Abstract

Correction for ‘Tunnel injection from WS2 quantum dots to InGaN/GaN quantum wells’ by Svette Reina Merden Santiago et al., RSC Adv., 2018, 8, 15399–15404.

Eqn (4) in the published paper was incorrect; the correct version is shown below:
 
image file: c8ra90034e-t1.tif(4)

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

This journal is © The Royal Society of Chemistry 2018
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