Shaobo
Li
abc,
Tao
Zhu
ac,
Lichun
Dong
*ac and
Mingdong
Dong
*b
aSchool of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China. E-mail: lcdong72@cqu.edu.cn
bInterdisciplinary Nanoscience Center (iNANO), Aarhus University, Aarhus-C 8000, Denmark. E-mail: dong@inano.au.dk
cKey Laboratory of Low-grade Energy Utilization Technologies & Systems of the Ministry of Education, Chongqing University, Chongqing, 40004, China
First published on 9th November 2018
Correction for ‘Boosted visible light photodegradation activity of boron doped rGO/g-C3N4 nanocomposites: the role of C–O–C bonds’ by Shaobo Li et al., New J. Chem., 2018, 42, 17644–17651.
As shown in Fig. 4c, the B-5%rGO/g-C3N4 nanocomposite exhibits the lowest interfacial charge-transfer resistance among the as-synthesized nanomaterials, suggesting a high separation efficiency of charge carriers in B-rGO/g-C3N4 owing to the enhanced C–O–C covalent bonding between g-C3N4 and rGO.
The authors would like to correct Fig. 4, as the UV-vis diffuse reflectance spectra shown in Fig. 4a are incorrect in the published article. The correct Fig. 4 is shown below.
The authors would also like to correct Fig. 5, as Fig. 5d is incorrect in the published article. The correct Fig. 5 is shown below.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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