Open Access Article
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Correction: Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering
Dong-Jin
Yun
a,
Seyun
Kim
b,
Changhoon
Jung
a,
Chang-Seok
Lee
a,
Hiesang
Sohn
c,
Jung Yeon
Won
a,
Yong Su
Kim
a,
JaeGwan
Chung
a,
Sung
Heo
a,
Seong Heon
Kim
a,
Minsu
Seol
*d and
Weon Ho
Shin
*e
aAnalytical Science Laboratory, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16678, Republic of Korea
bMaterials Research Center Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16678, Republic of Korea
cDepartment of Chemical Engineering, Kwangwoon University, 20 Kwangwoon-Ro, Nowon-Gu, Seoul 01897, Republic of Korea
dGraphene Center Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16678, Republic of Korea. E-mail: Minsu.seol@samsung.com
eEnergy Materials Center, Energy & Environment Division, Korea Institute of Ceramic Engineering & Technology, 101 Soho-ro, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea. E-mail: whshin@kicet.re.kr
First published on 5th January 2018
Abstract
Correction for ‘Direct characterization of graphene doping state by in situ photoemission spectroscopy with Ar gas cluster ion beam sputtering’ by Dong-Jin Yun et al., Phys. Chem. Chem. Phys., 2018, 20, 615–622.
The authors would like to correct the grant number given in the Acknowledgements of the published article. The correct Acknowledgements should read as follows:
This work was supported by a grant from the Fundamental R&D program for Core Technology of Materials funded by the National Research Foundation (NRF) of Korea (NRF-2017R1D1A1B03034322). This work was supported by the Samsung Advanced Institute of Technology.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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