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Correction: Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors
Xue-feng Sheab,
Jingsong Wanga,
Qingguo Xuea and
Wentao Xu*bc
aState Key Laboratory of Advanced Metallurgy, University of Science and Technology Beijing (USTB), Beijing 100083, China
bDepartment of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, Gyungbuk 790-784, Republic of Korea. E-mail: wentao@postech.ac.kr
cDepartment of Chemical Engineering, Stanford University, Stanford, CA 94305, USA
First published on 10th January 2017
Abstract
Correction for ‘Raw product of rare-earth ore works as a high-k gate insulator for low-voltage operable organic field-effect transistors’ by Xue-feng She et al., RSC Adv., 2016, 6, 114593–114598.
The structure of the cyanoethylated pullulan polymer depicted in Fig. 1 was incorrect and the correct structure of the polymer unit is represented below:
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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