Open Access Article
Wenhan Chen,
Qi Luo,
Xueshuang Deng,
Jianfeng Zheng,
Chenxi Zhang,
Xiaohong Chen and
Sumei Huang
*
Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, School of Physics and Materials Science, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062, P. R. China. E-mail: smhuang@phy.ecnu.edu.cn; Fax: +86 21 62234321
First published on 24th November 2017
The morphology of electron transport layers has a significant impact on the device architecture and electronic processes of mesoscopic perovskite solar cells (PSCs). In this study, ultrathin MgO is coated on the surface of compact TiO2 (c-TiO2). The MgO-coated c-TiO2 is first used as seeds to hydrothermally grow one-dimensional (1D) TiO2 nanorod (NR) arrays for PSC devices. Rutile nanorod arrays are fabricated via a facile solvothermal method using tetrabutyl titanate (TBT) as the Ti precursor. The microstructures and morphologies, including nanorod diameter, length, and areal density, of the TiO2 NR arrays are varied by controlling the concentration of TBT from 0.3 M to 0.7 M. Furthermore, the profound effects of the MgO modification and titania nanorod morphology on the pore-filling of perovskite CH3NH3PbI3, charge separation and recombination at the perovskite/titania nanorod interface are investigated. Our results reveal that the Ti precursor concentration strongly affects the open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor (FF) of the 1D TiO2 NR array-based device. Under optimized conditions with MgO coating and at 0.4 M TBT, our champion cell with 1D TiO2 NRs demonstrates a power conversion efficiency (PCE) of 17.03% with JSC = 22.01 mA cm−2, VOC = 1.06 V, and FF = 0.73. Under the same fabrication conditions, MgO modification enhances the average PCE to 16.24% for the PSCs with the MgO coating from 13.38% for the PSCs without the MgO coating. The devices show an approximately 18% improvement in performance, which mainly results from the open-circuit voltage and fill factor enhancements. Moreover, advantageously, the MgO modification is found to reduce the current density–voltage (J–V) hysteresis with respect to the scan direction and improve the UV stability of the non-encapsulated cells. Therefore, this study presents a promising approach to fabricate efficient and stable one-dimensional TiO2 nanorod array-based perovskite solar cells.
In this study, ultrathin MgO is coated on the surface of compact TiO2 (c-TiO2). The MgO-coated c-TiO2 is first used as seeds to hydrothermally grow one-dimensional (1D) TiO2 nanorod (NR) arrays for PSC devices. Rutile nanorod arrays are fabricated via a facile solvothermal method using tetrabutyl titanate (TBT) as the Ti precursor. The microstructures and morphologies of the TiO2 NR arrays, including nanorod diameter, length and areal density, are tuned by controlling the concentration of TBT from 0.3 M to 0.7 M. The electrical behavior and optical properties of titania nanorod ETLs are characterized and examined to understand the sources of both underperformance and outperformance in various device parameters. We demonstrate the profound effect of the MgO modification and titania nanorod morphology on the pore-filling of perovskite CH3NH3PbI3, charge separation and recombination at the perovskite/titania nanorod interface. We optimize the Ti precursor concentration and morphology of the hydrothermally grown TiO2 nanorod arrays to produce hysteresis-less CH3NH3PbI3 perovskite solar cells with a champion PCE of 17.03% and high UV light stability.
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1 and stirred for 2 minutes. Subsequently, TBT was added, and the mixture was further stirred. The amount of titanium butoxide was set as 0.03, 0.035, 0.04, 0.05, 0.06 M to obtain the desired TiO2-NR arrays respectively. The hydrothermal synthesis was conducted at 150 °C for 4 h in an electric oven to ensure that TiO2-NR arrays with a uniform thickness were obtained. After cooling to room temperature in air, the films were taken out from the autoclaves, rinsed with deionized water, dried in air, and annealed at 500 °C for 30 min to remove any residual organic contaminants.
| TBT concentration | Length (nm) | Absorber length (nm) | Diameter (nm) | Areal density (μm−2) | |
|---|---|---|---|---|---|
| Max | Mean | ||||
| 0.03 M | 250 | 401 | 35 | 21 | 224 |
| 0.04 M | 298 | 452 | 36 | 22 | 392 |
| 0.05 M | 555 | 720 | 55 | 33 | 276 |
| 0.06 M | 906 | 1107 | 89 | 59 | 120 |
| 0.07 M | 1163 | 1317 | 161 | 76 | 112 |
Fig. 2 shows top surface and cross-sectional SEM images of the CH3NH3PbI3-coated TiO2-NR arrays prepared with different concentrations of TBT. It can be seen that the total thickness of the CH3NH3PbI3 absorber layer on the TiO2-NR arrays prepared with TBT concentrations ranging from 0.03 M to 0.07 M increased from about 400 nm to 1320 nm. The pore-filling of CH3NH3PbI3 dramatically varied together with a change in the interspace between the TiO2 NRs. The dispersed small sized TiO2 NRs prepared with a low TBT concentration facilitated the loading of perovskite into the TiO2 pores or clearance between TiO2 NRs. The perovskite capping layers in the TiO2-NR arrays prepared with the low TBT concentrations of 0.03 M and 0.04 M show a very smooth and compact top surface morphology, as shown in Fig. 2(a) and (b), respectively. However, when the TBT concentration is higher, some perovskite material voids are visible on the top surface of the perovskite absorber, as shown in Fig. 2(d) and (e). Moreover, from the side views (Fig. 2(h)–(j)), large perovskite material voids are clearly observed on the surface or vicinity of the TiO2 NRs, which is probably caused by an Ostwaldt type ripening process during the crystal growth.35
The pinholes or perovskite material voids in the absorbers can decrease the shunt resistances or lead to HTM infiltration and cause short circuit, resulting in poor PSC device performances. Notably, the absorber sample formed under condition of 0.04 M TBT shows the optimal top-view and cross-section morphological properties. The perovskite semiconductor material almost completely covers the TiO2 NR array scaffold in this case, as shown in Fig. 2(g).
Fig. 3(a) and (b) show the UV-vis spectra of the bare and CH3NH3PbI3 coated TiO2-NR arrays prepared with different concentrations of TBT, respectively. From Fig. 3(a), the absorption onsets of the TiO2-NR arrays prepared with TBT concentrations of 0.03 M (0.04 M), 0.05 M, and 0.06 M (0.07 M) are approximately 360 nm, 400 nm and 405 nm, respectively. Consistent with the SEM images shown in Fig. 1, the results of the UV-vis spectra are thought to be attributed to the increasing length and diameter of the TiO2 nanorod arrays, which may reduce reflection and transmission.36 The real absorption spectra of perovskite CH3NH3PbI3 is shown in Fig. 3(c). As can be seen from Fig. 3(c), with the increase in TBT concentration from 0.03 to 0.04 M, the perovskite CH3NH3PbI3 has gradually stronger absorption in the 450–750 nm wavelength range. However, when the TBT concentration increased further from 0.04 to 0.07 M, the perovskite has weaker absorption. The perovskite film formed with the TBT concentration of 0.04 M exhibits the strongest light absorption over the 450–750 nm wavelength range. The increased absorption of the perovskite should be the result of improved surface coverage and more uniform crystal formation in the perovskite thin film. Moreover, due to the similar thicknesses of the CH3NH3PbI3 capping layers under the conditions of various TBT concentrations, as shown in Fig. 2(f)–(j), the increased absorbance is mainly associated with the optimized interfaces of perovskite/TiO2-NRs.
Fig. 4(a) and (b) show the current density–voltage (J–V) characteristics and EQE spectra of the fabricated devices based on 1D TiO2 NRs prepared with different TBT concentrations. The J–V measurements were recorded under AM 1.5 G solar irradiance, and the photovoltaic performance parameters and shunt (RSH) and series (RS) resistances are summarized in Table 2. It can be seen that the PSC device based on TiO2 NRs prepared with a TBT concentration of 0.03 M shows a PCE of 14.55%, resulting from an open circuit voltage (VOC) of 1.05 V, current density (JSC) of 22.0 mA cm−2 and fill factor (FF) of 0.63. When the TBT concentration was increased from 0.03 to 0.04 M, the device showed a significant improvement in FF with the corresponding increase in PCE to 16.24%. Upon further increasing the TBT concentration from 0.04 M to 0.07 M, lower JSC, VOC and FF values, and thus worse PV performances were observed in the related devices. At 0.07 M TBT, a considerable decrease in JSC, VOC and FF was observed, resulting in the corresponding decrease in PCE to 13.52%. From Tables 1 and 2, when the TBT concentration increased from 0.04 M to 0.07 M, the length of the grown TiO2-NRs increased from 250 nm to 1163 nm, while the JSC, VOC, FF and PCE values of the device performance continuously decreased. These results can be attributed to the disorder in the longer nanorod arrays and reduced pore-filling (Fig. 2). Kim et al. also found that photocurrent, photovoltage and power conversion efficiency decreased with an increase in nanorod length from 0.56 μm to 1.58 μm.20
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| Fig. 4 (a) J–V characteristics and (b) EQE spectra of the PSC devices based on TiO2-NR arrays prepared with different TBT concentrations. | ||
| TBT amount (M) | VOC (V) | JSC (mA cm−2) | Fill factor | PCE (%) | RS (Ω) | RSH (Ω) |
|---|---|---|---|---|---|---|
| 0.03 | 1.05 | 22.0 | 0.63 | 14.55 | 104 | 49 137 |
| 0.04 | 1.04 | 21.75 | 0.73 | 16.24 | 40 | 20 430 |
| 0.05 | 1.01 | 21.23 | 0.70 | 14.90 | 43 | 14 104 |
| 0.06 | 1.02 | 20.66 | 0.69 | 14.69 | 42 | 11 802 |
| 0.07 | 0.98 | 19.25 | 0.68 | 13.52 | 41 | 9800 |
For solar cells, the shunt resistance (RSH) is due to p–n junction non-idealities and impurities near the junction; however, the major contributors to the series resistance (RS) are the bulk resistance of the semiconductor material (the active layer), the contact resistance at the semiconductor–conductive interfaces and the resistance of the conductive contacts.37 As the TBT concentration increased from 0.03 to 0.04 M, the device showed an obvious decrease in both RS and RSH. Further increasing the TBT concentration from 0.04 M to 0.07 M, RS changed slightly, while RSH continuously decreased. At 0.07 M TBT, the shunt resistance decreased by 5 times. The lowest FF of the device prepared at 0.03 M can be associated with the largest RS.38 The key limitation in the performance of meso-superstructured PSCs is the balance between RSH and RS resistance.28 Both the smallest series resistance and the second largest shunt resistance of the PSC device prepared at 0.04 M are responsible for its highest FF. When the TBT concentration is 0.04 M, the formed TiO2 NRs have a small diameter and the highest area density, which are conducive to increasing the surface area of the TiO2-NR arrays and enhancing pore-filling. This leads to improved charge separation at the interface of CH3NH3PbI3/TiO2, and as a result, optimal and high-performance perovskite solar cells were assembled.
The EQE values of the devices based on the TiO2 NRs prepared with various TBT concentrations are quite different in the wavelength range of 300 and 400 nm, as shown in Fig. 4(b). This difference is due to the absorption of light by the TiO2 NRs, as shown in Fig. 3(a). Moreover, the EQE shown in Fig. 4(b) is relatively higher for the lower TBT concentration in the wavelength range of 400 and 600 nm, which indicates that the shorter nanorods utilize light more efficiently than the longer nanorods in this wavelength region. The EQE results of the devices with different TBT amounts are in good agreement with that from the J–V measurements of these cells, as shown in Fig. 4(a).
In early-reported TiO2 NR array based PSCs,19,20,24–26 TiO2 NR arrays were mostly grown on TiO2 compact-layer seeded FTO substrates via the hydrolysis of Ti precursors. In our work, ultrathin MgO coated-c-TiO2 layers were fabricated before the synthesis of the TiO2-NR arrays by modifying the procedure reported in our previous work for incorporating MgO into porous TiO2.14 In order to examine the influence of MgO modification, we measured the top surface and cross-sectional SEM images of TiO2 NR arrays directly deposited on c-TiO2 with 0.04 M TBT, as shown in Fig. 5(a) and (b), respectively. The length and mean diameter of the TiO2 nanorods prepared at 0.04 M TBT without MgO modification are similar to that of the TiO2 NRs grown at the same TBT concentration with MgO modification; however, the areal density of the former (248 μm−2) is smaller than that (392 μm−2) of the latter, as shown in Fig. 5 and 1(b) and (g), respectively. Moreover, without MgO modification, the obtained TiO2 NR arrays are randomly and non-uniformly tilted. The small areal density and badly aligned and unevenly distributed TiO2 NR arrays hinder infiltration of perovskite, thus leading to absorbers with poor morphology which degrade the photovoltaic performance of PSCs.20,24,39 Furthermore, it is known that there are numerous pin-holes present within TiO2 compact layers prepared via solution methods and these pin-holes expose the FTO gains underneath the layers, which decreases the blocking capability and electron collecting efficiency of the photoanode.40,41 With MgO modification of the c-TiO2, MgO insulating material particles are spread over the c-TiO2 layer which can partially cover these pores. Furthermore, since MgO particles are scattered over the substrate, the MgO coated c-TiO2 layer has places where TiO2 can have electrical contact with the TiO2 NRs and perovskite. Upon MgO modification, the c-TiO2 layer becomes smoother, leading the growth of more vertically aligned TiO2-NR arrays, as evidenced by the SEM observations shown in Fig. 1 and 5.
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| Fig. 5 Top surface and cross-sectional SEM images of bare and CH3NH3PbI3-coated TiO2 NR arrays deposited on c-TiO2 with a TBT concentration of 0.04 M without MgO modification. | ||
Fig. 6(a) and (b) show the UV-vis spectra of the bare and CH3NH3PbI3 coated TiO2-NR arrays based on c-TiO2 with and without MgO modification at 0.04 M TBT. From Fig. 6(a), the optical absorption edge of the TiO2-NR arrays with MgO modification shifts to a shorter wavelength range and a slightly lower absorbance or higher transmission is observed, especially in the short wavelength region. The higher transmission can contribute to improving the photocurrent. The blue-shift in the light absorption is due to the wider energy band gap of MgO. The perovskite absorber film based on c-TiO2 with MgO modification displays slightly stronger light absorption in the 300–800 nm range than the case without MgO modification, as shown in Fig. 6(b). The increased absorption of the perovskite is the result of efficient infiltration of perovskite, improved surface coverage and more uniform crystal formation in the perovskite thin films.
Fig. 6(c) shows the J–V curves of the best-performing perovskite solar cells based on c-TiO2 without and with MgO modification at 0.04 M TBT for forward and reverse scans. The corresponding best and mean PV parameters including JSC, VOC, FF and PCE are summarized for the reverse scans in Table 3. As can be seen from Table 3, the PSC device based on c-TiO2 without MgO modification shows an average PCE of 13.38% ± 1.43% resulting from a VOC of 0.96 V ± 0.04 V, JSC of 21.58 ± 0.80 mA cm−2 and FF of 0.67 ± 0.04. In contrast, the PSC with MgO modification has a higher average PCE of 16.24% ± 0.79%, with a VOC of 1.04 V ± 0.02 V, JSC of 21.75 ± 0.40 mA cm−2, and FF of 0.73 ± 0.02. With MgO modification, there are obvious enhancements in the VOC and FF. Besides, there was also a slight enhancement in the JSC, as expected, from the SEM and optical absorption examination and analysis in the previous sections. The improved photocurrent is also supported by the EQE spectra shown in Fig. 6(d). The improved open-circuit voltage can be attributed to the up-shift of the conduction band edge of TiO2 with the MgO coating.42 Moreover, the series resistance (RS) derived from the J–V curves has an impact on the FF.38 The lower RS of the PSC with MgO modification induced its higher FF. As result, the PSC with MgO modified c-TiO2 achieved a champion PCE of 17.03%.
| Device | Device | VOC (V) | JSC (mA cm−2) | Fill factor | PCE (%) | RS (Ω) |
|---|---|---|---|---|---|---|
| Without MgO | Best | 0.96 | 21.63 | 0.71 | 14.81 | 57 |
| Average | 0.96 ± 0.04 | 21.58 ± 0.80 | 0.67 ± 0.04 | 13.38 ± 1.43 | 55 ± 8 | |
| With MgO | Best | 1.06 | 22.01 | 0.73 | 17.03 | 39 |
| Average | 1.04 ± 0.02 | 21.75 ± 0.40 | 0.73 ± 0.02 | 16.24 ± 0.79 | 37 ± 6 |
Mesoscopic CH3NH3PbI3 perovskite hybrid solar cells usually have significant J–V hysteresis with respect to the forward and reverse scan directions owing to charge accumulation or dielectric polarization by ferroelectric properties.43 From Fig. 6(c), the PSC device based on c-TiO2 with MgO modification exhibited not only better device efficiency but also smaller J–V hysteresis with respect to the scan direction than the PSC devices without MgO modification. With MgO modification, the reduced J–V hysteresis can be attributed to the decreased recombination by eliminating the undesirable recombination pathway between TiO2 and the spiro-OMeTAD hole conductor and the reduction in electronic trap states, which enable faster electron transport by the formation of high-quality CH3NH3PbI3 absorbers.44
Fig. 6(e) shows the EIS results for perovskite solar cells based on c-TiO2 without and with MgO modification tested in the dark. In dark conditions, the structure of the PSC device could be simplified as a leaking capacitor.14 From Fig. 6(e), the size of the semicircle is related to the recombination resistance at the interface of the TiO2/perovskite layer and TiO2/hole transport layer. The bigger the diameter of the semicircle, the lower the electron recombination at the interface. The obtained EIS indicates that the recombination resistance increased by several times after MgO modification, which led to a significant decrease in current loss through recombination and an increase in FF.
The stability of perovskite solar cells is a major issue restricting their terrestrial application.14,45 We investigated the stability of unsealed PSCs based on c-TiO2 with and without modification with under UV irradiation. The PSCs were exposed to 365 nm UV illumination at an intensity of 90 mW cm−2, and were removed at certain time intervals to measure the J–V curves under simulated AM1.5 100 mW cm−2 irradiance. In Fig. 6(f), it can be observed that device based on 1D TiO2 NR arrays grown on MgO coated c-TiO2 exhibits a significantly improved stability. Its PCE retains more than 92% of its initial value, even after 25 min UV irradiation in air.
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