Hao Xua,
Zhixing Gan*b,
Weiping Zhouc,
Zuoming Dingb and
Xiaowei Zhanga
aFaculty of Science, Ningbo University, Ningbo 315211, China
bKey Laboratory of Optoelectronic Technology of Jiangsu Province, School of Physics and Technology, Nanjing Normal University, Nanjing 210023, China. E-mail: zxgan@njnu.edu.cn
cDepartment of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
First published on 16th August 2017
Insufficient visible light absorption and fast recombination of the photogenerated electron–hole pairs have seriously hampered the photocatalytic performance of graphitic carbon nitride (g-C3N4) up to now. To break these barriers, a novel metal-free composite based on 3C-silicon carbide (3C-SiC) nanoparticles (NPs) and g-C3N4 sheets was constructed and thoroughly investigated in the research reviewed in this report. Specifically, the enhanced visible light absorption of the 3C-SiC-NP-decorated g-C3N4 composite was verified using absorption spectra, and the effective separation of photogenerated carriers by the Type-II heterostructure band alignment forming between 3C-SiC and g-C3N4 was revealed using both steady-state and time-resolved photoluminescence spectra. The enhanced photocatalytic activity of the 3C-SiC-NP-decorated g-C3N4 composite was demonstrated experimentally using the degradation of methyl orange under visible light irradiation.
Biocompatible and environmentally friendly 3C-silicon carbide (3C-SiC), composed of abundant and cheap elements, with high thermal and chemical stabilities,27 has already shown good promise as a catalyst in electrochemical H2 production.28,29 With a bandgap of 2.4 eV,30 corresponding to an optical wavelength of 516.7 nm, 3C-SiC is a suitable supplement for absorption and utilization of visible light.31–35 Ultrathin 3C-SiC nanoparticles (NPs) were previously joined with TiO2 nanotubes in a study to improve the photocatalytic activity for the degradation of organic species.31 Very recently, polytype SiC particles with band gaps of 2.4–3.2 eV were used to modify the g-C3N4 to acquire enhanced photocatalytic H2 evolution ability.36 In this research, a purely metal-free composite was successfully constructed and used as a good photocatalyst for decorating 3C-SiC NPs onto g-C3N4 sheets. Simultaneously through the expanded spectral absorption favored by 3C-SiC and effective separation of photogenerated carriers because of the heterostructure band alignment formed within the composite, clearly enhanced photocatalytic performance on methyl orange (MO) by this composite was demonstrated experimentally. Compared to the research by Wang et al.,36 rather than polytype SiC particles containing hexagonal SiC with a band gap of 3.3 eV (insensitive to visible light), pure 3C-SiC NPs were combined with g-C3N4 in this work. Meanwhile, in this research, the sizes of 3C-SiC particles were much smaller, which is expected to be advantageous for photocatalytic performance. Furthermore, the sample preparation used here is much simpler.
Generation of active hydroxyl radicals (˙OH) was measured using a fluorescent method. A 100 mg of solid sample was added into a 100 mL of an aqueous solution containing 3 mM terephthalic acid (TA) and 0.01 M sodium hydroxide (NaOH). The suspension was firstly stirred in the dark for 2 h. Then the suspension was irradiated under a 400 W xenon lamp. A portion of the solution (approximately 5 mL) was taken out at time intervals of 10 min. Afterwards, all the portions were centrifuged to remove the precipitate. Finally, the concentrations of 2-hydroxyterephthalic acid (TAOH) generated by irradiation were estimated using PL spectrometer (with 320 nm line excitation). To evaluate the recyclability, a cycling test of three runs was carried out. After each run, the suspensions were centrifuged and the precipitates (catalysts) were collected for the next run.
Photodegradation measurement of MO: firstly, the solid photocatalyst (100 mg) was added into 100 mL of 0.5 ppm MO solution. Before the photodegradation experiments, the suspensions containing the catalysts were mixed ultrasonically for 30 min and stirred overnight in the dark to ensure an adsorption equilibrium. Then, the mixture was irradiated with a 400 W xenon lamp (approximately 0.5 W cm−2) equipped with a longpass cut-off filter at 420 nm, so that only light with a wavelength longer than 420 nm could reach the sample. Aliquots 5 mL were removed consecutively at time intervals of 10 minutes for MO degradation quantification. The residual concentrations of MO in the aliquots were tested using the UV-vis spectrophotometer. All the photodegradation experiments were conducted under identical conditions.
XRD patterns of g-C3N4, 3C-SiC and the composite samples are shown in Fig. 2. The XRD pattern of the 3C-SiC NPs matched well with JCPDS No. 29-1129, demonstrating that the particles were indeed cubic 3C-SiC with good crystallinities. The grain size was estimated to be about 20 nm according to the Scherrer equation, and this agreed with the average size obtained from the TEM image in Fig. 1c. The XRD pattern of g-C3N4, which stacks like graphite with a triazine-based connection sheet as component unit, exhibits two characteristic diffraction peaks at around 27.3° and 13.1°.26 The results of the XRD pattern verify the formation of g-C3N4 by thermal treatment of melamine. In the XRD patterns of all the composite samples, diffraction peaks of g-C3N4 (yellow circles) can be constantly observed, whereas the intensities of the featured peaks of 3C-SiC (grey squares) depend on the mass fractions. Note that in the sample C3N4–SiC (100:1), weak diffraction peaks of 3C-SiC can be resolved whilst those features become negligible in the sample C3N4–SiC (200:1). No additional diffraction peaks appeared besides 3C-SiC and g-C3N4.
TGA was used to study the formation of the nanocomposite (Fig. 3). All the tests were conducted from room temperature to 700 °C at a rate of 10 °C min−1 in air. The TGA result for 3C-SiC confirms that 3C-SiC is stable at temperatures up to 700 °C, which also suggests that no oxidation happened during the calcination step, and this is in agreement with the XRD results. Whereas, the 3C-SiC-melamine mixture (mass ratio = 1:100) exhibits a sharp weight loss at around 300 °C, which is mainly because of the transition from melamine to melem.7 A weight loss at about 550 °C was ascribed to the formation of g-C3N4 which could also be easily identified.
The structures were further investigated by examining the Raman spectra (Fig. 4a). The featured transverse optical (TO) mode at 790 cm−1 could be clearly distinguished in the spectrum of 3C-SiC NPs.37 A weak TO band of 3C-SiC could still be observed in the composite C3N4–SiC (10:1) without other peaks, indicating that the 3C-SiC NPs are stable under thermal treatment of 550 °C. However, because of the noticeable fluorescence of g-C3N4, the Raman modes for the spectra of the composites are largely hidden. UV-vis absorption spectra of all the samples were converted from diffuse reflectance spectra and are plotted in Fig. 4b. It was noticed that the absorption spectrum of 3C-SiC NPs shows no evident absorption edge, which is typical for indirect bandgap materials.
The absorption actually extended from 300 nm to 800 nm, which may be caused by phonon mediated optical absorption and band–tail transitions. Whereas, bare g-C3N4 mainly absorbs photons with a wavelength shorter than 460 nm. This means that, being decorated with 3C-SiC NPs, the absorption intensity of the 3C-SiC-NPs-decorated g-C3N4 composite is dramatically enhanced in the visible range. These absorption spectra are also consistent with the color variation shown in the photograph in Fig. 1a.
To gain an insight into the electron transition pathway, both steady-state and time-resolved PL spectra were measured. As shown in Fig. 5a, no remarkable fluorescence signal can be observed for the 3C-SiC NPs. Whereas, an apparent PL peak located at 470 nm can be observed in g-C3N4. The PL peak position matches well with the absorption edge, shown in Fig. 4b. With increasing fractions of 3C-SiC NPs, the PL intensity of the composite dramatically decreases, suggesting that the 3C-SiC NPs act as PL quenchers. It is worth noting that a blue shift presents with the increasing mass ratio of 3C-SiC in the composite, indicating that the formation of 3C-SiC-decorated g-C3N4 might induce electronic states with higher energy in the heterostructure. Time-resolved PL spectra and the enlargement shown in inset (Fig. 5b) clearly reveal that the PL decays faster when more 3C-SiC NPs are decorated on the g-C3N4 sheets. A graphic scheme of the electronic pathway of 3C-SiC-NPs-decorated g-C3N4 composite is illustrated in Fig. 6 using the PL results. Considering the bare g-C3N4, a simplified PL process can be described by nonradiative relaxation time τ1 and radiative recombination time τ2 irrespective of the detailed complex electronic structures:7
I(t) = A + B1e−t/τ1 + B2e−t/τ2 | (1) |
Fig. 6 Diagram of the band structure illustrating the electron transition pathway and explaining the enhanced photocatalytic activity. NHE: normal hydrogen electrode. |
As shown in Fig. 5c, τ1 = 2.77 ns and τ2 = 17.64 ns are acquired. In the 3C-SiC/g-C3N4 composites, heterostructures form between 3C-SiC NPs and the g-C3N4 sheets. The band alignment of the heterostructure is drawn in Fig. 6 according to the reported band structures.3,36 The conduction band (CB) and valence band (VB) of g-C3N4 are reported to appear at −1.12 eV and 1.6 eV, respectively, whereas the CB and VB of 3C-SiC locate at −0.23 eV and 2.17 eV, respectively. Obviously, it is a Type-II staggered gap, in which photogenerated electrons would transfer to the 3C-SiC NPs and the holes move to g-C3N4, reducing the radiative recombinations. Thus, the 3C-SiC NPs play the role of PL quenchers. Designating the carrier transfer rate constant as 1/γ, the PL process should be described by a tri-exponential decay function:
I(t) = A + B1e−t/τ1 + B2e−t/τ2 + Ce−t/γ | (2) |
This new electron transfer channel introduced by the heterostructure makes the PL decay faster and gives the effective separation of photogenerated carriers. By fixing τ1 and τ2 as 2.77 and 17.64 ns, respectively, the γ values can be obtained by numerical fitting (Fig. 5d). The γ values fitted from the PL decay curves are listed in Table 1. As the SiC content increases, the γ value drops from 1721.5 ns to 16.68 ns, indicating more 3C-SiC NPs provide higher carrier transfer rates within the composites. Thus, the heterostructure overcomes the issue of radiative recombination of the photogenerated electron–hole pairs in pure g-C3N4 by eventually enhancing the separation of photogenerated carriers. Furthermore, the 3C-SiC fills a major gap in the 460–600 nm optical absorption. Therefore, the metal free composites constructed using g-C3N4 and 3C-SiC could exhibit enhanced photocatalytic activity under visible light irradiation.
Sample | C3N4–SiC (200:1) | C3N4–SiC (100:1) | C3N4–SiC (20:1) | C3N4–SiC (10:1) |
---|---|---|---|---|
γ value (ns) | 1721.5 | 1117.7 | 691.0 | 16.68 |
As illustrated in Fig. 6, the generation of free radicals is crucial for the photodegradation. The generation of active hydroxyl radicals (˙OH) was confirmed via a fluorescent method by using TA as indicator. The TAOH emission at around 426 nm can be produced by the reaction of TA with ˙OH in a basic solution. Thus, the concentration of ˙OH in the solution could be detected by the fluorescent intensity. As shown in Fig. 7a, the PL intensity increased remarkably, together with irradiation time, thus verifying the generation of ˙OH by the g-C3N4. Similarly, the generation of ˙OH by C3N4–SiC was also confirmed (Fig. 7b). The time dependence of the PL intensity plotted in Fig. 7c shows that the PL intensity of TAOH generated by C3N4–SiC climbed faster, indicating an enhanced photocatalytic activity. In order to assess the stability of the C3N4–SiC composite, cycling tests were carried out (Fig. 7d). There is no noticeable deterioration in ˙OH generation rate after three cycles, indicating that the photocatalytic activity is quite stable.
MO is one of the important dyes in industry, and frequently appears in waste water, but cannot be naturally degraded by microorganisms. Thus, photodegradation of MO was tested to evaluate the photocatalytic activity of the C3N4–SiC composite and the results obtained are plotted in Fig. 8. Clearly, without any photocatalyst, MO is resistant to visible light irradiation. For pure 3C-SiC NPs, less than 10% MO degraded in one hour, demonstrating that 3C-SiC NPs alone had poor photocatalytic activity. Whereas, about 40% MO was degraded over g-C3N4 alone, under the same experimental conditions, verifying that bare g-C3N4 is an excellent photocatalyst. Being decorated with a small amount of 3C-SiC NPs, the photocatalytic activity of the C3N4–SiC (100:1) composite dramatically increased and 55% of MO was degraded in one hour, which is a superior result compared to the bare g-C3N4. Especially, when the irradiation time was 20 min, 21.8% and 38.1% of the dyes were degraded by g-C3N4 and C3N4–SiC (100:1), respectively. The degradation rate was almost doubled by decoration of the SiC NPs. However, unlike the performance of the chemical composite with heterostructure, the direct mixture of g-C3N4 and 3C-SiC NPs at the mass ratio of 100:1 showed photocatalytic ability slightly worse than the bare g-C3N4 under identical conditions, suggesting that the enhanced photocatalytic performance of the composite essentially stemmed from the Type II heterostructure band alignment. Although the electron transfer rate was the fastest and optical absorption was the strongest in C3N4–SiC (10:1) out of all the tested composites, the experimental results in Fig. 8 showed a reduced photocatalytic activity for the degradation of MO compared to C3N4–SiC (100:1), which is logical considering that the higher addition ratio of 3C-SiC into the composites lowered the contact surface of the g-C3N4 sheets with MO and shields the light irradiation onto g-C3N4 sheets, thus leading to a weakened photocatalytic activity.
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