Open Access Article
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Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite
Ja-Young
Seo
a,
Jaeho
Choi
b,
Hui-Seon
Kim
c,
Jaegyeom
Kim
d,
June-Mo
Yang
a,
Can
Cuhadar
a,
Ji Su
Han
b,
Seung-Joo
Kim
d,
Donghwa
Lee
e,
Ho Won
Jang
*b and
Nam-Gyu
Park
*a
aSchool of Chemical Engineering, Energy Frontier Laboratory, Sungkyunkwan University, Suwon 16419, Korea. E-mail: npark@skku.edu
bDepartment of Materials Science and Engineering, Research Center for Advanced Materials, Seoul National University, Seoul 08826, Korea. E-mail: hwjang@snu.ac.kr
cLaboratory of Photomolecular Science, Institute of Chemical Sciences and Engineering, Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland
dDepartment of Chemistry, Ajou University, Suwon 16499, Korea
eDepartment of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
First published on 27th October 2017
Abstract
Correction for ‘Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite’ by Ja-Young Seo, et al., Nanoscale, 2017, DOI: 10.1039/c7nr05582j.
The name of one of the co-authors is given incorrectly in the published article. “Huo-Seon Kim” should instead be listed as “Hui-Seon Kim” as provided in the corrected author list above.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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