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Correction: Broadband ultrafast photovoltaic detectors based on large-scale topological insulator Sb2Te3/STO heterostructures
Honghui
Sun
a,
Tian
Jiang
*abcd,
Yunyi
Zang
c,
Xin
Zheng
ad,
Yan
Gong
c,
Yong
Yan
e,
Zhongjie
Xu
bd,
Yu
Liu
b,
Liang
Fang
*ad,
Xiang'ai
Cheng
bd and
Ke
He
c
aState Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China. E-mail: tjiang@nudt.edu.cn
bCollege of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073, China
cState Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
dInterdisciplinary Center of Quantum Information, National University of Defense Technology, Changsha 410073, China
eHenan Key Laboratory of Photovoltaic Materials, College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, China
First published on 15th August 2017
Abstract
Correction for ‘Broadband ultrafast photovoltaic detectors based on large-scale topological insulator Sb2Te3/STO heterostructures’ by Honghui Sun, et al., Nanoscale, 2017, 9, 9325–9332.
The authors have noticed an error in the published version of this manuscript. The sentence beginning “Due to the difference in doping concentration between Sb2Te3 (Nh ∼ 2 synth 1019 cm−3)…” should be corrected to “Due to the difference in doping concentration between Sb2Te3 (Nh ∼ 2 × 1019 cm−3)…”
In the revised sentence, the word “synth” has been changed to “×”.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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