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We established locally varying strain fields in unmodified MoS2 nanosheets. The approach relies on dry release in place of multilayer MoS2 on textured Si substrates. By this process we demonstrated intense photoluminescence, a ∼70 meV decrease of the transition energy, and exciton funneling in ∼4 nm-thick MoS2 films.

Graphical abstract: Strain engineering, efficient excitonic photoluminescence, and exciton funnelling in unmodified MoS2 nanosheets

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