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Correction: Nanoparticles of Cu2ZnSnS4 as performance enhancing additives for organic field-effect transistors
Punarja
Kevin
a,
Mohammad Azad
Malik
b,
Paul
O'Brien
ab,
Joseph
Cameron
c,
Rupert G. D.
Taylor
c,
Neil J.
Findlay
c,
Anto R.
Inigo
c and
Peter J.
Skabara
*c
aSchool of Chemistry, The University of Manchester, M13 9PL, UK
bSchool of Materials, The University of Manchester, M13 9PL, UK
cWestCHEM, Department of Pure and Applied Chemistry, University of Strathclyde, G1 1XL, UK. E-mail: peter.skabara@strath.ac.uk
First published on 20th May 2016
Abstract
Correction for ‘Nanoparticles of Cu2ZnSnS4 as performance enhancing additives for organic field-effect transistors’ by Punarja Kevin et al., J. Mater. Chem. C, 2016, DOI: 10.1039/c6tc01650b.
On the third page of this article there in an additional, erroneous value included in the list of d-spacings and 69.34 should not appear. The correct sentence is as follows: “The p-XRD pattern (Fig. 1) of the sample prepared at 220 °C for 1 hour shows main peaks at d-spacings of: 3.14, 2.73, 1.92, 1.64, 1.35 and 1.24 for the (112), (200), (204), (312), (400) and (316) spacings of kesterite CZTS (ICDD: 04-015-0223).”
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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