This website uses cookies to give you the best user experience. If you continue without changing your settings we'll assume you are happy to receive all RSC cookies. You can change your cookie settings by navigating to our Privacy and Cookies page and following the instructions. These instructions are also obtainable from the privacy link at the bottom of any RSC page.
Lite Version|Standard version
Home > RSC Advances >
To gain access to this content please
Log in via your home Institution.
Log in with your member or subscriber username and password.
Download


Buy PDF Add PDF to Basket (£42.50*)
*Exclusive of taxes
This article contains 5 page(s)
Abstract | Cited by

Here, we report a facile and efficient sequential n-doping method to increase the device performance of planar-type organic/inorganic perovskite solar cells. Compared to the pristine PCBM-based electron transport layer (ETL), power conversion efficiencies of cells with a doped ETL are dramatically enhanced up to 12.53%.

Graphical abstract: Enhanced performance of perovskite solar cells with solution-processed n-doping of the PCBM interlayer

Page: ^ Top


Enter Keywords, author, title,reference, or DOI
Log in | Register