S. M. Y. Mohamed Mukthar Ali and
Sandhya K. Y.*
Department of Chemistry, Indian Institute of Space Science and Technology, Thiruvananthapuram, Kerala 695 547, India. E-mail: sandhya@iist.ac.in
First published on 17th June 2016
Herein, we report the one-step solvothermal synthesis of a highly crystalline nitrogen doped TiO2 (N-TiO2) comprised of ultra fine particles (∼4 nm) with N-methyl-2-pyrrolidone (NMP) as solvent and doping agent. The method yields a highly crystalline, high surface area N-TiO2 of pure anatase nature and is attributed to the use of organic solvents alone. The N-TiO2 exhibited higher visible light (>400 nm) catalytic activity (∼50% increase) in the photodegradation of rhodamine B (RhB) compared to that of the commercial P25. Annealed N-TiO2 (aN-TiO2) showed a ∼70% increase in the visible light degradation of RhB and nearly 100% increase in transient photocurrent density to that of P25. The improvement in the visible light photoactivity of N-TiO2 and aN-TiO2 is assigned mainly to the improved visible light response because of the narrowed the band gap by introducing intra-band electronic states and reduced charge transfer resistance and the comparatively better performance of aN-TiO2 is assigned to the additional Ti3+ defect states caused by oxygen vacancies formed during annealing.
It is widely accepted that doping of TiO2 by N improves the visible light activity.11,17,18 Typically N-doping of TiO2 has been achieved by utilizing ammonia, urea, triethylamine, NH4OH and hexamethylenetetramine, guanidine hydrochloride, triethylamine etc.19–24 as external dopants, plasma treatment using N2 or N2–H2 gas mixtures,25 mechanochemical method,26 sol–gel and hydrothermal/solvothermal methods etc. Solvents such as isopropyl alcohol (IPA),27 N-methyl-2-pyrrolidone (NMP)19 has been used as doping agent for C and N-doping, respectively by subjecting already prepared TiO2 to water based ambient condition sol (WACS) method.19 Kaewgun et al.19 has reported a N-doped P25 using NMP by solvent-based ambient condition sol method (SACS). The method has utilized the P25 as a starting material which leads to the formation of N-doped polymorphic titania.
Here we report, a single step procedure to the synthesis N-doped TiO2 (N-TiO2) from its precursor by solvothermal method using NMP as solvent and dopant. Since the N-TiO2 is formed from its precursor, it is possible to achieve molecular level N-doping. While previous reports19 have obtained polymorphic titania and our method yields ultra fine sized (∼4 nm) highly crystalline N-TiO2 with pure anatase phase and very high surface area of 191 m2 g−1. The obtained N-TiO2 was annealed at 400 °C under inert atmosphere and the annealed product of N-TiO2 was referred to as aN-TiO2. It is interesting to note that the aN-TiO2 showed a narrowed band gap of 3.10 eV as compared to the 3.15 and 3.3 eV of N-TiO2 and P25, respectively. The aN-TiO2 exhibited the enhanced photodegradation activity for rhodamine B (RhB) and transient photocurrent density under visible light compared to that of the P25 and attributed to the N-doping which induces intra-band electronic states. Photoelectrochemical experiments showed that aN-TiO2 has comparable or lower charge transfer resistance to that of P25 and is probably due to the defect states. Thus, the method provides a one-step procedure for synthesizing highly crystalline, ultra small sized anatase N-doped TiO2 with higher surface area and improved visible light activity. Annealed N-TiO2 shows enhanced visible light PD activity and photocurrent than N-TiO2 and all this without the use of any external doping agents.
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5) mixture in an autoclave under stirring. Then the autoclave was heated to 180 °C for 20 h. After the reaction, the reaction mixture was allowed to cool to room temperature. Then 50 mL of water was added to it and then stirred for 1 h. The yellowish white precipitate was centrifuged and washed plenty of time with water and finally washed with IPA and dried at 75 °C overnight. To study the effect of doping, temperature and time has been varied and the composites are labelled as N-TiO2 (T–t), where T refers to temperature while t refers to duration of reaction in hours. Initially the photocatalytic activities were tested and the N-TiO2 (180–20) was found to be a best photocatalyst and it was called as N-TiO2 for further discussion. This N-TiO2 was annealed at 400 °C for 2 h under inert atmosphere in order to remove any surface adsorbed N-species, and was named as aN-TiO2.
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IPA mixture.
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| Fig. 1 (A) FTIR spectra (B) Raman spectra and (C) XRD pattern of (a) P25; (b) N-TiO2 and (c) aN-TiO2. | ||
The HRTEM images of N-TiO2 and aN-TiO2 are given in Fig. 2. The lattice spacing of 0.34 nm in Fig. 2B confirms the anatase form of TiO2. The TEM images clearly showed that the particle sizes are 3–5 nm for N-TiO2 while it was ranging from 9 to 12 nm for aN-TiO2 (Fig. 2C) which is agreeing with the sizes calculated from XRD results. The size increase in aN-TiO2 is due to annealing.
Fig. 3 shows the XPS data corresponding to the wide spectra, deconvoluted N1s and Ti2p peaks of N-TiO2 and aN-TiO2. Wide spectrum clearly showed the presence of Ti, O, N and C elements in N-TiO2 and aN-TiO2. N-Doping was evidenced by the presence of N1s binding energy levels (398–406 eV). The reduced intensity of N1s peak in the wide scan of aN-TiO2 was due to the partial removal of surface adsorbed NO3− molecules. Apart from surface adsorbed N-groups, interstitial and substitutional doped N can be identified from deconvoluted spectra of XPS. Deconvolution of N1s spectra of N-TiO2 (Fig. 3) showed three peaks at 399.6, 400.3 and 404 eV while that of the aN-TiO2 showed two peaks at 399 and 400.3 eV.34,35 The absence of peak at 404 eV in aN-TiO2 was complementing the results obtained from the FTIR. Asymmetrical nature of the O1s peaks of N-TiO2 and aN-TiO2 as compared to that of the P25 (Fig. S2†) suggested the influence of N atom in the O1s environment other than the Ti atom.21,36,37 As expected, the binding energies of Ti2p has been shifted to 458.9 (Ti2p3/2) and 464.6 eV (Ti2p1/2) as compared to that of the Ti2p peaks [459.5 (Ti2p3/2) and 465.2 eV (Ti2p1/2)] of P25 (Fig. S2†).38 The quantification of weight% of N-doping was done for N-TiO2's prepared under different conditions and found to be 0.64, 0.94, 0.98 and 0.97% for N-TiO2 (140–20), N-TiO2 (180–20), N-TiO2 (200–20) and N-TiO2 (180–30), respectively. The weight% of N decreased from 0.94% in N-TiO2 to 0.52% in aN-TiO2 due to the removal of surface adsorbed N-species. Incorporation of N can lead to increase in the electron density on Ti atom due to the comparatively lower electronegativity of N to that of oxygen, thus influencing the binding energies of nearby Ti and O atoms.
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| Fig. 3 XPS spectra of N-TiO2 and aN-TiO2 corresponding to wide, deconvoluted N1s peaks and Ti2p peaks. The N1s peak in aN-TiO2 is confirming the partial removal of nitrogen sources. | ||
Reduced binding energies of Ti2p peaks of N-TiO2 as compared to P25 (Fig. S2†) indicated that N incorporation and assist the formation of Ti3+ defect states. Moreover the peak at 462.7 eV corresponds to the Ti2p1/2 peak of Ti3+ defect state in N-TiO2 14 while that peak was diminished in aN-TiO2. This can be due to lower detection limit of XPS since the extent of N functional groups has been reduced during annealing. The presence of Ti3+ defect states in aN-TiO2 can still be identified from the asymmetrical Ti2p peaks. It was well reported12,39–41 that N doping can induce the formation of Ti3+ defect states and oxygen vacancies below the conduction band of TiO2. Livraghi et al.41 has reported the enhancement in the visible light absorbance of N-doped TiO2 due to the formation of Ti3+ defect states and oxygen vacancies. Nitrogen doping21,42 can induce the formation of oxygen vacancies and therefore Ti3+ defect states both are known to improve the conductivity as well as the reducing the band gap.
DRS spectra and the corresponding Tauc plots were obtained for the solid N-TiO2, aN-TiO2 and P25 are given in Fig. 4A & B respectively. It was evident from the DRS spectra (Fig. 4) that both N-TiO2 and aN-TiO2 showed improved visible light absorption than that of P25. Reports show that N doping of TiO2 creates intra-band states that are close to the valence band edges, which induces visible light absorption.43 Band gaps obtained from Tauc plots for N-TiO2 and aN-TiO2 were 3.15 and 3.1 eV, respectively, lower compared to that of the P25 (3.3 eV). The slight band gap reduction in N-TiO2 and aN-TiO2 were attributed to the introduction of intra-band states in the band gap of TiO2. Due to annealing, changes were observed with regard to N-doping, such as the removal of surface adsorbed NO3− groups and partial conversion of interstitial N doping into substitutional N doping as supported by FTIR and XPS analyses. Both interstitial N and substitutional N, can cause the reduction in band gap.39 In addition, an improvement in the visible light absorptivity was observed for aN-TiO2 to that of N-TiO2, and is attributed to the formation of Ti3+ defects by the formation oxygen vacancies during annealing as supported by XPS. Valentin et al.39 and Livraghi et al.41 reported the formation of Ti3+ defects and oxygen vacancies during N-doping especially at high temperature reductive condition.
Table 1 shows that the BET specific SA values are in the order of N-TiO2 > aN-TiO2 > P25. The higher SA of N-TiO2 (~4 times that of the P25) was attributed to the preparation method which utilizes organic solvent alone, resulting in ultra-fine TiO2 particles. The SA of aN-TiO2 decreased to around half the value of that of N-TiO2 and is assigned to the annealing process which increased the particle size. Furthermore, N-doping and particle size distribution were analyzed using zeta-potential (ZP) and particle size measurements. The increase in the hydrodynamic volume of aN-TiO2 (1704 nm) as compared to N-TiO2 (803 nm) suggested that annealing increases the particle size. The ZP values of the samples show that for N-TiO2 (−12.9 mV) has the highest negative value compared to that of aN-TiO2 (0.7 mV) and P25 (14 mV) which agree with previous reports that have demonstrated. The ZP of N-doped TiO2 is comparatively more negative due to the acidic properties of N-doped surface and due to the lower electronegativity of N compared to that of O in N-TiO2.44 The relatively lower ZP of aN-TiO2 is attributed to the reduced surface groups due to the increased particle size and to the partial removal of surface adsorbed N-groups during annealing. The result indicates the N-doping of TiO2 to form N-TiO2. Thus, the characterization techniques confirm the doping of N in TiO2 in a single step method using NMP solvent.
| Photocatalysts | BET surface area (m2 g−1) | Zeta-potential (mV) | Particle size (nm) |
|---|---|---|---|
| N-TiO2 | 191 | −12.9 | 803 |
| aN-TiO2 | 78 | 0.7 | 1704 |
| P25 | 49 | 14 | 1876 |
Visible light photodegradation (PD) of RhB (Fig. 5) was conducted for the different N-TiO2 samples prepared by varying the temperature and time and based on the performance of the various N-TiO2, the best was reported for the temperature of 180 °C and 20 h sample. Further increase in temperature and time did not improve the catalytic activity and therefore, we chose this condition for annealing the N-TiO2. The visible light catalytic properties of the N-TiO2, aN-TiO2 and P25 were investigated using the PD of RhB (Fig. 6). The adsorption of RhB for 2 h and the UV-vis absorption spectra of RhB during the visible light photodegradation are given in Fig. S3.† Adsorption in the dark in the first one hour was ∼5% for both N-TiO2 and aN-TiO2 and no further adsorption was observed during the next one hour. The order of PD activity of the catalysts is as follow aN-TiO2 > N-TiO2 > P25 and their PD% are 80, 72 and 50%, respectively and evidently follow their visible light absorption capability. Higher photoactivity of aN-TiO2 as compared to N-TiO2 is due to the improved visible light absorptivity induced by Ti3+ and oxygen vacancies. Even though BET SA of N-TiO2 (191 m2 g−1) is higher than aN-TiO2 (78 m2 g−1), the formation of Ti3+ and oxygen vacancies favour improved visible light absorption and hence higher photoactivity, which suggests that the PD is mainly due to photocatalysis mechanism rather than dye-sensitized mechanism.
In order to further ascertain the visible light activity of aN-TiO2, the PD reactions of RhB were conducted in UV light and the results (Fig. 6) show that the UV light activity follows the order P25 > aN-TiO2 > N-TiO2 with 84, 65 and 57% PD, respectively. The results clearly show that the activity has reversed its trend in the UV light confirming that the improved activities of aN-TiO2 and N-TiO2 in the visible light are due to their improved visible light absorption. The relatively higher activity of P25 under UV light is assigned to its better charge separation due to the rutile and anatase phase interface alignment.43
Recycling studies of aN-TiO2 were done using the PD of RhB and the results are given in Fig. S4.† The result shows that there was an initial decrease from (100–76%) in the photodegradation and after that the decrease in PD efficiency observed was very minimal (∼1–2%) for each cycle and after 6 cycles the PD was 68%. It should be noted that the photocatalyst was not washed in between the cycles. Therefore, the initial decrease may be due to the blocking of surface active sites by products/reactants. Further decrease in PD after second cycles were negligible which indicates the stability of the N-doped TiO2.
To further confirm the visible light absorption of N-TiO2 and aN-TiO2, we have conducted the transient photocurrent response experiments, which involves no dyes, under visible light (>400 nm) (Fig. 7) and observed that the photocurrent densities are higher for N-TiO2 and aN-TiO2 (1.2 μA cm−2 and 1.4 μA cm−2, respectively) compared to that of P25 (0.6 μA cm−2). The result confirms the visible light responsiveness of both N-TiO2 and aN-TiO2 as evidenced by DRS spectra. The photocurrent density was fairly stable throughout the experiment indicating the stability of both N-TiO2 and aN-TiO2 under visible photoirradiation. The shape of the transient photocurrent response gives information of the N-doped surface states. The response of N-TiO2 shows an initial steep rise of photocurrent density immediately upon switching-on the light, and thereafter a rapid exponential decay is observed, followed by a cathodic current “overshoot” when the light is switched off. This overshoot is a typical fingerprint of intense surface recombination processes due to the defects caused by doping.45–47 The overshoot observed in case of N-TiO2 may possibly due to the surface defect states caused by N-centered states while such an overshoot is not observed in aN-TiO2 and this interesting observation may be attributed to the removal of surface –NO3 groups, which agrees with our XPS data. This overshoot is not observed in P25 either. The result of photocurrent measurements confirm the visible light activity of aN-TiO2 and N-TiO2 and thus the N-doping of TiO2 by the single step method using the solvent, NMP.
Electrochemical kinetics can be used to explain the charge transfer resistance across the interfaces. Nyquist plots of EIS analysis offer the idea of charge transfer resistance. Lower the charge transfer resistance smaller will be the radius of semicircle in the plot. Nyquist plots (Fig. 8) show that the semicircle radius is smaller for N-TiO2 to that of the P25, indicating reduced charge transfer resistance in N-TiO2 and is attributed to the defect states introduced by N-doping.
Footnote |
| † Electronic supplementary information (ESI) available: Details of digital images, SEM image, XPS and UV-vis DRS data. See DOI: 10.1039/c6ra09525a |
| This journal is © The Royal Society of Chemistry 2016 |