Wei Wangab,
Honglie Shen*ac,
Lydia Helena Wong*b,
Zhenghua Sub,
Hanyu Yaoa and
Yufang Lia
aCollege of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, 29 Yudao Street, Nanjing 210016, China. E-mail: hlshen@nuaa.edu.cn
bEnergy Research Institute, Nanyang Technological University, 639798, Singapore. E-mail: lydiawong@ntu.edu.sg
cJiangsu Provincial Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics & Astronautics, 29 Yudao Street, Nanjing 210016, China
First published on 31st May 2016
Quaternary Cu2ZnSnS4 (CZTS) thin films were prepared by a low-cost, simple and environmentally-friendly ink method. By depositing molecular solution on the nanoparticle thin film, the quality of as-prepared CZTS thin films was greatly improved (e.g. reduction of fine grain layer formation and improved crystallinity). The effect of the number of spin-coated layers from molecular solution on solar cell performance was investigated. The results indicated that the CZTS thin film had the best performance when 5 layers were spin-coated from molecular solution on the nanoparticle thin film. The crystallinity of the as-prepared CZTS thin film and the interface at Mo/CZTS was found to be obviously enhanced by addition of a molecular solution layer. Finally, a CZTS thin film solar cell with an efficiency of 4.92% has been fabricated.
Various methods including vacuum and non-vacuum based technologies have been used to prepare CZTS thin films for solar cells. CZTS solar cell with an active area efficiency of 6.77% was fabricated by sputtering method.3 Byungha Shin et al. reported 8.4% efficiency CZTS solar cell fabricated by co-evaporation deposition method.4 However, the deposition technique generally requires high vacuum system increasing preparation cost. In contrast, non-vacuum based approaches can provide low-cost routes to CZTS solar cells. These non-vacuum based approaches include spray pyrolysis, electrodeposition, and ink approach, etc.5–8 Among these non-vacuum methods, ink approach containing of nanoparticles-based ink and molecular solution ink, has been extensively reviewed due to suitability for large-scale production.9 Su et al. used molecular solution ink method to prepare CZTS thin film, and the efficiency of CZTS solar cell reached to 5.1%.10 Recently, Su et al. reported that Cd replaced Zn partially to form Cu2Zn1−xCdxSnS4 thin film and the efficiency of Cu2Zn1−xCdxSnS4 solar cell reached to 9.24%.11 Meanwhile, nanocrystals-based approach has obtained more and more attention. This method can control phase formation, since phase formation occurs prior to film deposition. Gu et al. fabricated CZTS thin film solar cell with 2.29% by nanocrystals-ink method.12 Caleb K. Miskin et al. selenized nanoparticle inks to prepare Cu2ZnSn(S,Se)4 thin film and obtained 9% efficient solar cell.13
At present, the CZTS nanoparticle ink is prepared by hydrophobic CZTS nanoparticles, which are synthesized using organic solvent such as oleylamine (OM), trioctylphosphine oxide (TOPO), oleic acid (OA), and octadecene (ODE).14 These solvents are high-cost and not environmental-friendly. The hydrophobic nanoparticles are coated with a chemisorbed layer of organic ligands to prevent aggregation, which provide good dispersibility in solvents. But, the organic ligands will cause carbon residue, which can weaken the devices performance.15 In this paper, we used hydrophilic CZTS nanoparticles to prepare ink, which were synthesized using low-cost and environmental-friendly ethylene glycol as solvent.
In order to improve quality of as-prepared thin films, we combined molecular solution with nanoparticle ink to fabricate CZTS thin films. Compared with nanoparticles ink-derived CZTS solar cell, the CZTS solar cell prepared by combination of molecular solution with nanoparticle ink had higher efficiency and its efficiency reached 4.92%.
Preparation of molecular solution: 7.74 mmol Cu(CH3COO)2·H2O, 5 mmol Zn(CH3COO)2·2H2O, 4 mmol SnCl2·2H2O and 32 mmol Tu were dissolved in 15 mL 2-methoxyethanol. This preparation method of molecular solution was similar with the previous literature report.11
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| Fig. 1 Diagram of the preparation process of CZTS thin film by nanoparticle ink and molecular solution method. | ||
:
Al (AZO) layer was deposited by DC sputtering. The sputtering power was 200 W, and work pressure was 4 × 10−3 mbar. The sheet resistivity of as-prepared AZO thin film was 20 Ω □−1. Finally, Ag grid was printed as the top electrode, and dried at 60 °C.
Because the XRD diffraction patterns of CZTS are similar with those of ZnS, CuS and Cu2SnS3 secondary phases, Raman spectroscopy was used to further confirm the phase structure information. As shown in Fig. 3, the Raman peaks located at 286, 335 and 372 cm−1 could be assigned to the characteristic modes of kesterite structure Cu2ZnSnS4, which matched well with previous literature.18 The Raman main peak of CZTS thin film prepared by molecular solution was weaker and broader than others, which might be due to smaller crystalline size. The results were agreed well with those of XRD. Raman peaks from ZnS, Cu2SnS3, SnS2 and Cu2−xS (351 cm−1, 305 cm−1, 315 cm−1 and 475 cm−1) were not observed, further indicating that pure CZTS thin films were obtained.19
Shown in Fig. 4 were the surface morphologies of the as-prepared CZTS thin films. From low magnification SEM images, there were several cracks in the surface of S0 (Fig. 4a). S0 was prepared using nanoparticle ink without molecular solution. During the thermal treatment process, the evaporation of organic compounds leads to bring large shrinkage stress which produced cracks. The crack would lead to generate larger leakage current to decrease the efficiency of solar cells. From Fig. 4c and e, we could find that using the molecular solution to cover the surface can effectively remove cracks. However, spin-coated 3 layers from the molecular solution on the nanoparticles film were too thin to cover all area. Thus, S3 had some holes on the surface (Fig. 4c and d). When the molecular solution was spin-coated on the nanoparticles film for 5 times, the cracks and holes disappeared as shown in Fig. 4e and f. Moreover, the as-prepared thin film was compact, uniform and even. But some holes could be also observed on the surface of PS15 (Fig. 4g and h). EDS measurement showed that the chemical compositions of S0 and PS15 were Cu
:
Zn
:
Sn
:
S = 20.37
:
10.91
:
12.17
:
56.56 and Cu
:
Zn
:
Sn
:
S = 21.22
:
13.20
:
12.41
:
53.17. The composition of S0 was close to the predicted composition. The result indicated that Sn-loss was no observed in S0 prepared by nanoparticle ink method.
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| Fig. 4 Low and high magnification SEM images of the as-prepared CZTS thin films: (a and b) S0, (c and d) S3, (e and f) S5, (g and h) PS15. | ||
Fig. 5 presented the cross-section SEM images of the CZTS thin film solar cells with structure of Mo/CZTS/CdS/i-ZnO/AZO. The thickness of as-prepared CZTS thin films was 0.81, 0.73, 0.70 and 0.9 μm, respectively. As shown in Fig. 5a, S0 exhibited a bi-layers structure consisting of a large-grain top layer (∼0.66 μm) and a fine-grain bottom layer (∼0.15 μm). This structure was similar with the literature.20 But we could also find that the fine-grain layer had a good contact with Mo. Compared with S0, S3 and S5 exhibited that the thickness of the fine-grain layer reduced and even disappeared. The fine-grain layer disappeared due to reduction nanoparticles precursor layers. Fig. 5c presented the grain size was larger than 500 nm. According to previous literature reports, large grain size was necessary to prepare solar cells with high efficiency. The fine-grain layer and MoS2 at the interface of CZTS/Mo were no observed. However, the grain size of pure molecular solution-based thin film was smaller than the other samples (Fig. 5d). There were several holes at the interface of CZTS/Mo, which would decrease the short circuit current density (JSC) and fill factor (FF) of solar cells. Thus, we speculated that the several layers from molecular solution not only improved the interface of CZTS/Mo, but also enhanced the crystallinity of the as-prepared CZTS thin films.
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| Fig. 5 The cross-section SEM images of as-prepared CZTS thin film solar cells with a structure of Mo/CZTS/CdS/i-ZnO/AZO: (a) S0, (b) S3, (c) S5, (d) PS15. | ||
After sulfurization and without further treatments, we used standard method to fabricate the CZTS thin film solar cells with the structure of Glass/Mo/CZTS/CdS/i-ZnO/AZO/Ag. The current density–voltage characterization of the as-prepared devices was obtained under AM 1.5 simulated illumination as shown in Fig. 6. The devices parameters were calculated based on the active device area (0.15 cm2) which did not include shadowing by Ag electrode. The total device area was 0.16 cm2. Table 1 presented the detail parameters of the as-prepared devices. The power conversion efficiency (PCE) of sample S0 with pure nanoparticles-based fabrication was 2.1%, and the open circuit voltage (VOC), JSC and FF were 415 mV, 11.02 mA cm−2 and 45.9%, respectively. The absorber layer of S0 device had some cracks, which could lead to low VOC and JSC. The cracks were removed by several molecular solution layers to cover the surface (S3 and S5). So, the PCE of sample S3 and S5 was improved to 4.18% and 4.92%. Moreover, we can also find that the VOC, JSC and FF of the sample S3 and S5 all improved greatly. However, when we used pure molecular solution to prepare thin film, the corresponding device performance was worse than S3 and S5. Particularly, the FF and JSC of sample PS15 device decreased to 36.74% and 14.77 mA cm−2, respectively. According to the result of the cross-section SEM image, there were some holes at the interface of CZTS/Mo, which were the main reason of decreasing the device performance. The VOC was lower than the previous report, which maybe due to general interface recombination at CdS/CZTS or Mo/CZTS.4 Nevertheless, combining nanoparticle ink with molecular solution to prepare CZTS thin films could greatly improve the devices performance.
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| Fig. 6 I–V characterization of the as-prepared CZTS thin films solar cells under AM 1.5 illumination. | ||
| Sample | VOC (mV) | JSC (mA cm−2) | FF (%) | η (%) |
|---|---|---|---|---|
| S0 | 415 | 11.02 | 45.9 | 2.10 |
| S3 | 502.5 | 17.89 | 46.51 | 4.18 |
| S5 | 512.8 | 18.55 | 51.74 | 4.92 |
| PS15 | 515.5 | 14.77 | 36.74 | 2.80 |
In order to further analyze the devices, external quantum efficiency (EQE) measurements were performed and the results were shown in Fig. 7. The devices presented good photo-responses in the range of 400–800 nm. At the near blue spectrum region, the EQE results exhibited a little decay, indicating the light losses in the CdS buffer layer, which might be attributed to the relative thickness of the CdS layer. On the other hand, nanoparticle ink-derived CZTS thin film had some cracks to cause quality of CdS. So, S0 had lower EQE than the others at the near blue spectrum region. However, at the near red spectrum region, the EQE results exhibited a steep decay, which may be due to high recombination losses in the bulk and depletion regions.10 As can be seen from Fig. 7, S5 showed the best EQE compared with the other devices, which was consistent with its JSC. Fig. 8 demonstrated a plot of [hv
ln(1 − EQE)]2 vs. photon energy (hv) to estimate the band gap of the absorber layer. The band gaps were 1.56 eV for S0, 1.5 eV for S3 and S5, 1.49 eV for PS15, respectively. These results were also in agreement with the band gap of CZTS in previous reports.21 The different band gaps might be due to different composition.
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