Open Access Article
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Correction: The effect of recombination under short-circuit conditions on the determination of charge transport properties in nanostructured photoelectrodes
J.
Villanueva-Cab
*a,
J. A.
Anta
b and
G.
Oskam
c
aInstituto de Física, Benemérita Universidad Autónoma de Puebla, Apdo. Postal J-48, Puebla, Pue. 72570, Mexico. E-mail: juliovc@ifuap.buap.mx
bNanostructured Solar Cells Group, Department of Physical, Chemical and Natural Systems, Universidad Pablo de Olavide, Ctra. Utrera, km 1, ES-41013 Seville, Spain
cDepartamento de Física Aplicada, CINVESTAV-IPN, Mérida, Yuc. 97310, Mexico
First published on 10th May 2016
Abstract
Correction for ‘The effect of recombination under short-circuit conditions on the determination of charge transport properties in nanostructured photoelectrodes’ by J. Villanueva-Cab et al., Phys. Chem. Chem. Phys., 2016, 18, 2303–2308.
On page 2304 of the published article, eqn (1) should be amended as shown below:
 | (1) |
 | ||
| Fig. 2 Diffusion coefficient as function of charge density. Comparison between measured (SLIT) values and the model predictions for three different recombination rate constants: k0 = 0 (ηSS,coll = 99.5% at 1 Sun), k0 = 2.718 × 10−3 s−1 (ηSS,coll = 99% at 1 Sun) and k0 = 0.12 s−1 (ηSS,coll = 80% at 1 Sun). When recombination takes place under short circuit conditions, the diffusion coefficient is overestimated, which can be erroneously interpreted as a trap distribution of α′ = 0.333. See the text for details. | ||
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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