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Correction: An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1
Jian
Deng
a,
Yuanxiang
Xu
a,
Liqun
Liu
a,
Cunfang
Feng
a,
Jia
Tang
a,
Yu
Gao
a,
Yan
Wang
*a,
Bing
Yang
a,
Ping
Lu
a,
Wensheng
Yang
a and
Yuguang
Ma
*ab
aState Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China
bState Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China. E-mail: wangy2011@jlu.edu.cn
First published on 22nd January 2016
Abstract
Correction for ‘An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm2 V−1 s−1’ by Jian Deng et al., Chem. Commun., 2016, DOI: 10.1039/c5cc09702a.
The authors regret that the CSD refcode (VIGNIK) was not provided for the crystal structure (CCDC 860278) discussed in the original manuscript, and the CCDC number itself was presented instead. The following refcode link provides access to the details for CCDC 860278, which was originally reported in Journal of Physical Chemistry Part C: Nanomaterials and Interfaces, 2012, 116, 15146.
http://www.ccdc.cam.ac.uk/services/structures?pid=csd:VIGNIK&sid=CCDCManual
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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