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Correction: High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol
M.
Bezuidenhout
ab,
T.
Kennedy
b,
S.
Belochapkine
b,
Y.
Guo
b,
E.
Mullane
b,
P. A.
Kiely
a and
K. M.
Ryan
*b
aDepartment of Life Sciences, and Materials and Surface Science Institute, University of Limerick, Limerick, Ireland
bMaterials and Surface Science Institute and Department of Chemical and Environmental Sciences, University of Limerick, Limerick, Ireland. E-mail: Kevin.m.ryan@ul.ie
First published on 24th July 2015
Abstract
Correction for ‘High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol’ by M. Bezuidenhout et al., J. Mater. Chem. C, 2015, 3, 7455–7462.
Ref. 49 of the manuscript has been updated as follows;
49 T. Kennedy, M. Bezuidenhout, K. Palaniappan, K. Stokes, M. Brandon and K. M. Ryan, ACS Nano, 2015, DOI: http://10.1021/acsnano.5b02528.
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.
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