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Correction: Thermoelectric properties of Te-doped ternary CuAgSe compounds

P. F. Qiuab, X. B. Wangab, T. S. Zhangab, X. Shi*ab and L. D. Chenabc
aCAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China. E-mail: xshi@mail.sic.ac.cn
bState Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
cShanghai Institute of Materials Genome, China

Received 15th October 2015 , Accepted 15th October 2015

First published on 21st October 2015


Abstract

Correction for ‘Thermoelectric properties of Te-doped ternary CuAgSe compounds’ by P. F. Qiu et al., J. Mater. Chem. A, 2015, DOI: 10.1039/c5ta06780d.


Fig. 4 of the above manuscript is incorrect and should be as shown in the figure below.
image file: c5ta90230d-f4.tif
Fig. 4 (a) Temperature dependences of (a) Cxx/σxx and (b) Cxy for CuAgSe1−yTey (y = 0, 0.05, 0.1, and 0.15) samples; the dotted lines represent the data for the non-stoichiometric CuAgSe reported in ref. 14.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.


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