Pragati Fageriaa,
Roshan Nazira,
Subhashis Gangopadhyayb,
Harish C. Barshiliac and
Surojit Pande*a
aDepartment of Chemistry, Birla Institute of Technology and Science, Pilani, Rajasthan 333031, India. E-mail: spande@pilani.bits-pilani.ac.in; surojitpande@gmail.com; Fax: +91-1596-244183; Tel: +91-1596-515709
bDepartment of Physics, Birla Institute of Technology and Science, Pilani, Rajasthan 333031, India
cSurface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560017, India
First published on 15th September 2015
Shape-dependent synthesis of ZnO has been developed on the surface of g-C3N4 following a simple and reproducible strategy. Initially, graphitic-carbon nitride (g-C3N4) was synthesized by pyrolysis of urea which was further used to grow ZnO nanostructures via refluxing conditions. Different hydrolyzing agents, such as hexamethylenetetramine (HMT) and ammonia were used to synthesize dumbbell and cone structures, respectively. Apart from hydrolyzing agents, cetyltrimethylammoniumbromide (CTAB) was also used as a growth controlling agent. Structural, morphological and optical characterizations of the as-synthesized materials were performed by using FESEM, TEM, XRD, XPS, UV-vis etc. techniques. After successful synthesis, the as-synthesized heterostructures were explored as visible light driven photocatalysts towards organic pollutant (methylene blue and phenol) degradation. The photocatalytic performances of bare ZnO, dumbbell and cone structures of g-C3N4/ZnO as well as g-C3N4, have been examined thoroughly. Photocatalytic results revealed that g-C3N4/ZnO heterostructures exhibit a higher efficiency under the illumination of visible light as compared to pure g-C3N4. Superior photodegradation activity of the g-C3N4/ZnO heterostructure originated from the synergistic effect and high charge separation at the interface of g-C3N4 and ZnO has also been discussed.
g-C3N4 represents an important class of conjugated polymeric semiconductors.14 Similar to graphene, g-C3N4 possesses π-conjugated electronic structure with a band gap of 2.7 eV.2–5,8,9,15 g-C3N4 is a layered metal-free semiconductor with an interlayer distance of about 0.33 nm (single layer of g-C3N4).6 Bulk g-C3N4 can easily be prepared by polycondensation reaction of organic precursors, e.g., urea, cyanamide, dicyandiamide, and melamine. Liu and co-workers13 demonstrated a large-scale production of g-C3N4 by pyrolysis of urea using different reaction temperatures and times. They have also reported the photocatalytic activity of g-C3N4 in dye degradation using visible light.13 Another simpler approach for the synthesis of polymeric g-C3N4 using urea as precursors and their application in rhodamine B (RhB) dye degradation using visible light has been reported by Dong and co-workers.12 Surfactant (Pluronic P123) assisted synthesis of porous g-C3N4 using melamine has been reported by Yan and co-workers, where they found a significant improvement in the photocatalytic H2 evolution from water using visible light.16 Wang and co-workers9 reported chemically and thermally stable polymeric carbon nitride, a metal free photocatalyst with high capability, to generate hydrogen from water. Additionally, they have modified the carbon nitride with small amount of Pt metal to vary the hydrogen production with better activity and reduced experimental error. However, a low quantum efficiency for Pt modified C3N4 surface has also been observed.9
The photocatalytic performance of bare g-C3N4 is limited due to the high recombination rate of the photogenerated electron–hole pairs.17–21 This restricted photocatalytic performance of g-C3N4 can be enhanced by synthesizing porous structures,20–23 doping and/or coupling of g-C3N4 with transition metals, metal oxides and sulphides, and active protonation.19,24–28 To increase the separation between photogenerated electron–hole pairs and to promote the photocatalytic activity, researchers have coupled g-C3N4 with ZnO, TiO2, CdS, ZnWO4, BiPO4, Bi2WO6, and Ag2O semiconductors.20–29 Hence, efforts have been given to suppress the rate of recombination of charge carriers and improving the consumption of solar light, by combining two semiconductors. ZnO is an UV-light active and large exciton binding energy (60 MeV) material with Eg = 3.37 eV that also limits the practical application in visible light photocatalysis.30 Sun and co-workers20 reported a calcination process for the synthesis of a composite g-C3N4–ZnO as visible light photocatalysts with variable amount of ZnO, which they have utilized for methyl orange and p-nitrophenol photodegradation using visible light with 3–6 times better activity as compared to bare g-C3N4.20 The improved photocatalytic activity and optimum synergistic effect of ZnO hybridized g-C3N4 has also been reported by Wang and co-workers.21 Synthesis of core–shell nanoplates of N-doped ZnO/g-C3N4 via ultrasonic dispersion process and their excellent visible light photocatalytic activity has been reported by Kumar and co-workers,30 which was due to the less electron–hole pair recombination at the interface of N-doped ZnO/g-C3N4. Liu and co-workers31 reported the synthesis of g-C3N4/ZnO composite by deposition–precipitation technique, which has been used as a visible light active photocatalyst with a first-order kinetics for both photooxidation and photoreduction reaction. Synthesis of g-C3N4/ZnO nanotube by electrochemical methods and their improved photoelectrochemical properties due to synergistic effect between g-C3N4 and ZnO has been reported by Wang and co-workers.32 All these reports demonstrate a heterostructure semiconductors, combination of ZnO and g-C3N4, having eminent photocatalytic performance under the illumination of visible light. Being inspired from the above studies we have synthesized morphology-dependent ZnO structures on g-C3N4 surface. Best of our knowledge, here we are reporting for the first time the shape-dependent synthesis of ZnO on g-C3N4 surface and their application in photocatalysis.
Within this work, we report a simple and facile approach to synthesize visible light active heterostructures of g-C3N4 and ZnO, via chemisorption of zinc precursors followed by hydrolysis and dehydration. Firstly, bulk g-C3N4 was synthesized followed by the formation of dumbbell and cone shaped ZnO on its surface using CTAB and different hydrolyzing medium. The analytical techniques like UV-vis, powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were used as characterizing tools to corroborate the synthesis of bulk g-C3N4 and g-C3N4/ZnO composite. Methylene blue (MB) dye and phenol were chosen as model compounds to evaluate the photo-activity of the as-synthesized catalysts under the illumination of visible light. g-C3N4/ZnO heterostructures show superior activity as compared to bare g-C3N4 as well as pure ZnO nanoparticles. Due to type-II band alignment of ZnO and g-C3N4, interface between g-C3N4 and ZnO helps for faster transportation of photogenerated charge, which results g-C3N4/ZnO to be an efficient photocatalyst. Finally, the reusability of g-C3N4/ZnO has also been executed to prove the stability of catalyst.
g-C3N4/ZnO cone heterostructure was synthesized using the same procedure described for g-C3N4/ZnO dumbbell, except ammonia solution was used to maintain the alkaline (pH ∼9–10) instead of HMT solution.
Similar procedure was applied with phenol degradation using visible light, 0.4 mL of 5 × 10−3 M aqueous phenol solution and 5.0 mg of catalyst were used for the decomposition reaction so that the final concentration of phenol in 10 mL water was 2 × 10−4 M.
For MB and phenol dye % degradation or degradation yield was calculated using initial and time-dependent absorbance values:
To determine the surface areas of g-C3N4/ZnO heterostructures, N2 adsorption–desorption isotherms was measured with Autosorb iQ Station 1 (Quantachrome Instruments, version 3.01) at a bath temperature of 77.35 K.
Fig. 1 shows UV-vis spectra of g-C3N4 and g-C3N4/ZnO heterostructures. g-C3N4 and g-C3N4/ZnO show strong absorption in visible light with absorption edge at ∼440 nm. The position of absorption edge remains unchanged for all the samples whereas g-C3N4/ZnO heterostructure shows an increased absorption as compared to the bare g-C3N4, which is due to the presence of ZnO nanostructure.23,31 The absorption intensity for both g-C3N4/ZnO heterostructure shapes are similar, which can be attributed to the UV-light absorption of ZnO. Hence, the morphological shape of various ZnO structures on g-C3N4 surface doesn't affect the absorption intensity within the visible region. Although, a sharp band at 369 nm for ZnO has been reported in the literature,33 g-C3N4/ZnO heterostructures do not show any distinct peak for ZnO within the UV-vis spectrum. The band gap (Eg) of g-C3N4 can be estimated from the plot of (αEp)2 vs. photon energy (Ep) using the extrapolated value of Ep at α = 0, following equation: αEp = k(Ep − Eg)1/2, where, α = absorption coefficient, Ep = discrete photon energy, Eg = band gap energy, and k = constant. The calculated Eg value for g-C3N4 is found to be ∼2.88 eV (Fig. 1 (inset)), which is consistent with previous reports.20
In order to analyze the effect of ZnO and the fate of photogenerated electron–hole pairs on g-C3N4 surface, photoluminescence (PL) spectral analysis has been carried out. Fig. 2 shows the PL spectra of g-C3N4 and g-C3N4/ZnO heterostructures with an excitation wavelength of 315 nm. The intense emission peak is centred at around 441 nm for pure bulk g-C3N4, which could be assigned to the higher recombination rate of the photogenerated electrons and holes.12,32 In case of g-C3N4/ZnO heterostructures, red shifted emission peaks appear at 436 nm and 432 nm for dumbbell and cone structure, respectively. The decrease in emission peak intensity for g-C3N4/ZnO heterostructures is due to inhibited recombination of photogenerated electron–hole pairs in g-C3N4 and ZnO heterojunction, which further indicates a successful charge separation. However, PL study confirms about the increased lifetime of the photogenerated carrier in g-C3N4/ZnO heterostructures compared to bare g-C3N4, which is due to the type-II band alignment of ZnO and C3N4.
In order to check the phase purity and structural property of the as-synthesized g-C3N4 and g-C3N4/ZnO composites, powder X-ray diffraction (PXRD) analysis has been performed, as shown in Fig. 3. The XRD pattern (inset of Fig. 3) of pure g-C3N4 reveals two distinct peaks at 2θ = 13.3° and 27.6°. The weaker peak at 13.3° corresponds to the presence of (100) crystalline plane, which is due to in-plane ordering of tri-s-triazine units. The relatively stronger peak at 27.6° is recognized as the reflection from (002) lattice plane which also resembles an interlayer spacing of d = 0.32 nm, the long-range interlayer stacking of the aromatic system of g-C3N4.12,13
In case of g-C3N4/ZnO heterostructures, eight major reflection peaks for ZnO are observed at 2θ = 31.78°, 34.42°, 36.19°, 47.40°, 56.47°, 62.63°, 68.85°, and 76.71°, correspond to the (100), (002), (101), (102), (110), (103), (112), and (202) crystal planes of ZnO (Fig. 3). According to JCPDS card no. 89-1397, all the observed diffraction peaks match well with the wurtzite (HCP) structure of ZnO for both the cone and dumbbell shape morphologies.33 Apart from the eight major peaks for ZnO, another diffraction peak at 2θ = 27.6°, representing the (002) lattice plane of g-C3N4, also appears which confirms the existence of ZnO on g-C3N4 surface (Fig. 3). Absence of any impurity peak, originated from unreacted urea, non-hydrolyzed Zn2+ precursor salt, and Zn(OH)2, within the XRD pattern of g-C3N4 and g-C3N4/ZnO heterostructures also confirms the material's phase purity.
The morphological analysis of the as-synthesized ZnO has been studied using a field emission scanning electron microscopy (FESEM). Fig. 4a and b represent the low and high resolution FESEM images of ZnO structures, synthesized using HMT hydrolyzing agent. Fig. 4a shows an SEM image of randomly distributed dumbbell shaped ZnO structure on g-C3N4 surface maintaining the shape uniformity. The average length and breadth of ZnO dumbbells on g-C3N4 surface is about 1.76 μm and 0.76 μm, respectively, as can be seen in Fig. 4b. Fig. 4c and d exhibit FESEM images of cone shaped ZnO structures, where ammonia was utilized as hydrolyzing agent. The average length of the side of a cone is found to be about 0.51 μm (Fig. 4d), which is significantly shorter than the dumbbell shape. The presence of ZnO cone on g-C3N4 surface is aggregated even with an uniform shape. Pure bulk g-C3N4 also appears in aggregated morphology with many C3N4 sheets and layered structure (Fig. S2†). All these findings clearly suggest a random growth of ZnO on g-C3N4 surface, for both dumbbells and cones and results in different growth morphologies for HMT (dumbbell shape) and ammonia (cone shape) hydrolyzing agent.
Fig. 4 FESEM images of g-C3N4/ZnO dumbbells (a) at low resolution and (b) at high-resolution. FESEM images of g-C3N4/ZnO cones (c) at low resolution and (d) at high-resolution. |
The structures and shapes of ZnO dumbbells and cones on g-C3N4 surface have also been investigated with the help of TEM. TEM images of morphology dependent ZnO are shown in Fig. 5. Fig. 5a exhibits a TEM image of ZnO dumbbell on g-C3N4 surface, which was synthesized using the HMT. The length and breadth of a single dumbbell is found to be 1.73 μm and 0.78 μm (inset of Fig. 5a), respectively, which are complementary to our FESEM findings. In can also be noted that the size and shape of the ZnO dumbbells are quite uniform. High-resolution TEM image (Fig. 5b) of C3N4/ZnO heterostructure shows a fringe spacing value of 0.26 nm, which corresponds to the (002) crystal planes of ZnO. Hence, we can conclude that the growth of ZnO dumbbell on g-C3N4 surface occurred along (002) plane. TEM and HRTEM images of ZnO cones on g-C3N4 surface (synthesized by using ammonia) are shown in Fig. 5c and d. From the inset of Fig. 5c, the length of a cone can be estimated to 0.51 μm, well in line with earlier FESEM analysis. Fig. 5d shows clear lattice fringes of ZnO on g-C3N4 surface with fringe spacing of d = 0.26 nm, which can be attributed to the (002) lattice planes of the wurtzite ZnO crystal, and also complementary with our XRD results. Finally, TEM and HRTEM analysis also confirm the morphology dependent synthesis of ZnO using various hydrolyzing agents and their random distribution on g-C3N4 surface.
Fig. 5 (a) TEM and (b) HRTEM images of g-C3N4/ZnO dumbbell. (c) TEM and (d) HRTEM images of g-C3N4/ZnO cones. Inset of (a) and (c) shows a single dumbbell and cone at high-resolution. |
Selected area elemental mapping of g-C3N4/ZnO cone shaped heterostructures (Fig. S3†), has been performed by EDS technique which confirms the presence of C, N, Zn, and O elements. The line mapping of g-C3N4/ZnO heterostructure shows different lines for Zn, O, C, and N (Fig. S3a†) which clearly proves the random distribution of ZnO over the g-C3N4 surface.
N2 adsorption–desorption isotherms of the as-decorated dumbbell and cone shaped ZnO catalyst samples have been used to determine the surface areas of the catalysts, which further helps to quantify the adsorption property. The BET surface area values of 45.35 and 23.67 m2 g−1 have been observed for g-C3N4/ZnO dumbbells and cones, respectively. The larger surface area value of ZnO dumbbells confirms better adsorption property over the ZnO cones. The N2 adsorption–desorption isotherms of ZnO dumbbell and cone structures are presented in Fig. S4.†
Fig. 6 XPS spectra of (a) wide scan survey of cone (ZnO-C) and dumbbell (ZnO-D) shaped g-C3N4/ZnO structures. High resolution scans of (b) Zn 2p and (c) N1s core level photoelectrons. |
Fig. 7 High-resolution XPS spectra of g-C3N4/ZnO samples with various deconvolution components of C1s, N1s and O1s photoelectrons. (a–c) Cone morphology (ZnO-C) and (d–f) dumbbell morphology (ZnO-D). |
High-resolution XPS spectra of C1s, N1s and O1s binding energy peaks for both g-C3N4/ZnO samples are presented in Fig. 7. All spectral analysis with various de-convolution processes are performed using a linear background subtraction and a mixture of Lorentzian and Gauss fitting. Fig. 7a–c represent the corresponding spectra of ZnO-C sample whereas, Fig. 7d–f depict the spectral analysis for ZnO-D sample, respectively. C1s binding energy spectra of the ZnO-C and ZnO-D samples are shown in Fig. 7a and d, respectively. The deconvoluted components of C1s line appear in two main binding energy peaks positioned at about 287.7 and 284.6 eV. The peak cantered at 287.7 eV is identified as sp2 bonded carbon (N–CN), whereas the peak positioned at 284.6 eV corresponds to the graphitic carbon (C–C) of the materials and adventitious hydrocarbon from the instrument. Similar to earlier observation, Fig. 7b and e show the deconvoluted spectra of N1s for ZnO-C and ZnO-D samples, respectively. The asymmetrical shape of the observed N1s lines indicates chemically different N species within the g-C3N4. Two major components appear within the deconvoluted spectra are assigned to the sp2 hybridized nitrogen (C–NC) at lower binding energy and the sp3 hybridized tertiary nitrogen (C–N–C) at relatively higher binding energy. Additionally, a relative peak shift for ZnO-D samples toward the lower energy side can also be observed, which has already been discussed in earlier. The deconvolution of O1s spectra for both ZnO-C and ZnO-D samples can be seen in Fig. 7c and f, respectively. The oxygen species mainly appear in (−2) oxidation state within the crystalline ZnO matrix, with a minor fraction of surface hydroxides. Similar to N1s, a relative peak shift for O1s spectra in opposite direction originated from partial charge transfer between g-C3N4 and ZnO can also be noted. For better understanding and clarity, every details of all the deconvoluted spectra are summarized in Table 1.
Sample | ZnO-C | ZnO-D | |||
---|---|---|---|---|---|
B.E. peaks | Sub-peaks | Peak position | Relative intensity | Peak position | Relative intensity |
C1s | N–CN | 287.7 | 55585 | 287.7 | 86873 |
C–C | 284.9 | 102606 | 284.8 | 109997 | |
N1s | C–NC | 398.9 | 59580 | 398.1 | 103713 |
C–N–C | 400.4 | 34681 | 399.2 | 75326 | |
O1s | Zn–O | 530.9 | 199188 | 531.3 | 100847 |
Zn–O–H | 532.7 | 19771 | 532.3 | 29034 |
During the synthesis, CTAB was used as stabilizer and growth controlling agent for the growth of ZnO nanostructure on g-C3N4 surface. It is predicted that the surface of g-C3N4 is negatively charged (−24.6 ± 2.4 mV), which has also been confirmed from zeta-potential analysis. Therefore, Zn2+ precursor salt (ZnSO4·7H2O) can easily be adsorbed on negatively charged g-C3N4 surface and cationic surfactant (CTAB) can readily interact with adsorbed Zn2+ ions on the same surface. In addition, various hydrolyzing agents, such as HMT and ammonia were used to supply OH− ions in the solution, which is essential for the ZnO formation. Dumbbell shape (Fig. 4 and 5) of ZnO was obtained for a pH ∼ 7.5 of HMT, which acts as a rich source of OH− ions upon thermal degradation. Riley and co-workers reported that HMT acts as a source of OH− ion and its thermal decomposition produces ammonia and formaldehyde.34a Dutta and co-workers also reported the release of OH− ions upon thermal degradation of HMT.34b Whereas, for ZnO cone structures (Fig. 4 and 5), ammonia with pH ∼ 9 was used as a source of OH− ions, which spontaneously react with Zn2+ ions to form [Zn(OH)2] on g-C3N4 surface. Afterwards, the [Zn(OH)2] complex further reacts with excess OH− ions to form [Zn(OH)4]2− ions. During reflux, dehydration of [Zn(OH)4]2− takes place and finally gives rise to ZnO formation.
Apart from the OH− ion supply, as the rate of hydrolysis decreases with increasing pH and vice versa, HMT also acts as a buffer.34b Dutta and co-workers34b nicely represented the role of HMT for the growth of ZnO nanowire and nanorod. Due to the presence of a long chain polymer and a nonpolar chelating agent in HMT, it prefers to attach with the nonpolar facets of zincite crystal for epitaxial growth through a polar (001) face only.35a,b Therefore, instead of buffer like behaviour, HMT behaves more like a shape-inducing polymer surfactant. However, in this study, HMT was used for dual purposes. Firstly, a source of OH− ions and secondly a shape inducing polymer surfactant along with CTAB for the growth of ZnO dumbbells on the surface of g-C3N4. Finally, the surrounding of ZnO dumbbells on g-C3N4 surface is covered by the CTAB, which is confirmed by a positive surface charge (+5.14 ± 0.8 mV) from zeta potential analysis. There is no shape inducing agent for the synthesis of ZnO cones, the morphology was obtained solely due to the presence of cationic surfactant (CTAB) in the solution, a growth controlling agent. This phenomena was confirmed by a positive surface charge (+14.3 ± 1.2 mV) of g-C3N4/ZnO cone heterostructures from zeta potential analysis. Therefore, we can conclude that the CTAB and the available OH− ions from ammonia solution can favour the formation of ZnO cones on g-C3N4 surface. Due to relatively higher concentration of OH− ions from ammonia, the surface coverage of ZnO cones on g-C3N4 is found significantly more, whereas the coverage of ZnO dumbbells appears less with the HMT (Fig. 4 and 5). This relatively higher surface coverage of ZnO cones over dumbbell structures was also confirmed by XPS and SEM analysis. The overall formation mechanisms of ZnO in presence of both HMT and ammonia are given below.
g-C3N4/Zn2+ + 2OH− → g-C3N4/Zn(OH)2 |
g-C3N4/Zn(OH)2 + 2OH− → g-C3N4/Zn(OH)42− |
g-C3N4/Zn(OH)42− → g-C3N4/ZnO + OH− + H2O |
Additionally, some control experiments were carried out to determine the role of CTAB, HMT, ammonia, for the formation of different ZnO morphologies on g-C3N4 substrate. At first, without any CTAB aggregated ZnO particles were obtained on the surface of g-C3N4 keeping all other conditions unaltered. FESEM image of aggregated ZnO particles is shown in ESI Fig. S5.† Secondly, in absence of any hydrolyzing agent (HMT or ammonia) it was impossible to grow any ZnO on the g-C3N4 surface. In an alternate approach, without using any C3N4 while keeping the CTAB and ammonia concentration unaltered, flower shaped ZnO structures were observed.33 However, other morphological shapes of ZnO such as nanorod, nanowire, nanotube etc. have been reported for HMT hydrolyser, without C3N4 substrate.36 Therefore, it can be concluded that presumably, C3N4 can provide many active centres for the initial nucleation of ZnO. This effect helps to grow ZnO randomly on C3N4 surface in spite of growing on a single centre which finally give rise to the flower, rod, wire etc. like morphology. Therefore, for the synthesis of ZnO dumbbell and cone structures on g-C3N4 surface, CTAB, HMT, ammonia, and g-C3N4 play very important roles. The overall formation of shape-dependent ZnO nanostructure on g-C3N4 surface is shown in Scheme 1.
Scheme 1 The overall mechanism for the formation of bulk g-C3N4, g-C3N4/ZnO heterostructure (dumbbell and cone), and aggregated ZnO on g-C3N4 surface. |
It can be seen from Fig. S7† that the degradation of MB with bare g-C3N4 was reached ∼55% decomposition under visible light irradiation. The rate constant (kbare) value with bare g-C3N4 is observed 0.6 × 10−2 min−1 and showed pseudo-first order kinetics. Fig. 8a shows the degradation of the MB using dumbbell shape of g-C3N4/ZnO heterostructures. After 140 min, the reaction was almost over and ∼99% of dye degradation was achieved. Within Fig. 8b, At/A0 vs. time (min) has been plotted, which shows an exponential behaviour with time. The rate constant (kND) of 2.4 × 10−2 min−1 was determined from the slope of ln(At/A0) vs. time (min) plot (Fig. 8c), which is four times higher than that of bare g-C3N4. Fig. 8c also confirms pseudo-first-order kinetics of MB degradation using g-C3N4/ZnO dumbbell catalyst. Fig. S8a† shows the UV-vis absorption spectra of MB degradation using cone shaped g-C3N4/ZnO heterostructures. At the end of 140 min, ∼99% of the dye was already degraded. Similar to earlier result, the At/A0 vs. time (min) plot also appears in exponential nature (Fig. S8b†) and from the slope of ln(At/A0) vs. time (min) plot (Fig. S8c†), the rate constant (kNC) was calculated to be 1.8 × 10−2 min−1, which is three times higher than that of bare g-C3N4. Pseudo-first-order kinetics of MB degradation was also observed with cone structures of ZnO. After the completion of 1st cycle, the catalyst was removed from the reaction mixture and washed for the re-use purpose.
Furthermore, to prove the visible light activity of g-C3N4/ZnO (dumbbell and cone) heterostructures, a pure UV light active material phenol was used for degradation reaction. The UV-vis spectra of phenol degradation using dumbbell and cone shaped ZnO heterostructures are shown in ESI Fig. S9a and b,† respectively. It can be seen from Fig. S9a and b† that the complete phenol degradation was reached under a visible light irradiation in 150 and 170 min for dumbbell and cone structure of ZnO, respectively. Whereas, 300 min is required for complete degradation of the phenol with bare g-C3N4 catalyst. The rate constant values for g-C3N4/ZnO dumbbell and cone heterostructure are found 2.0 × 10−2 min−1 and 1.5 × 10−2 min−1, respectively, which is significantly higher than that of pure g-C3N4. Hence, phenol degradation result also confirms the higher photo-activity of the dumbbell and cone structure of ZnO on g-C3N4 surface as compared to the bare g-C3N4 catalyst.
Fig. 9 shows the comparative study of MB dye degradation using ZnO, bare g-C3N4, and g-C3N4/ZnO (dumbbell and cone) heterostructure catalysts under visible light irradiation. Pure ZnO nanoparticles are UV light active and does not have any role on MB dye degradation under visible light illumination.33 Bare g-C3N4 is known as a visible light active material and electron–hole pairs are generated after irradiation with visible light. It can be seen from Fig. 9 that the degradation of MB occurred with bare g-C3N4 with a slowest rate (kbare = 0.6 × 10−2 min−1), which is due to the fast recombination of the photogenerated charged species (e− and h+). Therefore, to suppress this problem of recombination, a heterojunction was created by modifying the surface of g-C3N4 with dumbbell and cone structures of ZnO. In case of heterostructures, the photo-activity is higher (kND = 2.4 × 10−2 min−1 and kNC = 1.8 × 10−2 min−1) due to the decreased recombination of e− and h+. This diminished recombination of e−–h+ pairs has also been proved from the decreased intensity in photoluminescence spectra (Fig. 2) of g-C3N4/ZnO heterostructures as compared to bare g-C3N4. Sun and co-workers reported 3 times better activity in visible light dye degradation with g-C3N4–ZnO spherical particles as compared to bare g-C3N4 for methyl orange and p-nitrophenol degradation.20 Kumar and co-workers also reported 5 times higher rate constant value for N-doped ZnO nanoplates than bare g-C3N4 nanosheets.30 Li and co-workers reported 3.8 times higher rate constant value with g-C3N4/ZnO composite than the pure g-C3N4, during rhodamine B dye degradation.37 However, both dumbbell and cone structures of ZnO on g-C3N4 surface shows 3–4 times higher activity in MB and phenol dye degradation than bare g-C3N4, under illumination with the visible light and the rate constants order is found as kND > kNC > kbare. The higher rate constant with g-C3N4/ZnO dumbbell structures is mainly due to the larger surface area of dumbbells (45.35 m2 g−1) as compared to that of cones (23.67 m2 g−1). Larger surface area of the catalyst particles absorb more organic dye molecules, which further confirms the faster dye degradation rate of ZnO dumbbells than cone structures. Therefore, the as-obtained morphologies of ZnO in g-C3N4/ZnO heterostructures show better photo-activity than other reported ZnO morphologies.
Fig. 9 Comparative studies of degradation of MB dye in presence of ZnO, bulk g-C3N4, g-C3N4/ZnO (dumbbells), and g-C3N4/ZnO (cones) under visible light. |
EVB = χ – Ec + 0.5Eg |
ECB = EVB − Eg |
The value of χ for ZnO is 5.79 eV and the band gap energy (Eg) of the as-synthesized ZnO material is 3.12 eV. The EVB of ZnO was calculated to be +2.85 eV. Hence, the ECB of ZnO can be estimated to −0.27 eV. Based on the reported data, the CB and the VB edge potential values of g-C3N4 are −1.1 eV and +1.6 eV, respectively.38,41 All the potential energy values for both ZnO and g-C3N4 are shown in Scheme 2. It can be seen from Scheme 2 that the CB potential energy or LUMO for g-C3N4 (ECB = −1.1 eV) is lower than the ZnO (ECB = −0.27 eV). Hence, the excited e− from the CB of g-C3N4 can easily inject to the CB of ZnO upon irradiation with visible light.21,30–32,38 Therefore, the potential energy match in the heterojunction of g-C3N4/ZnO is a driving force for the transportation of photogenerated e− from the CB of g-C3N4 towards the CB of ZnO, which effectively reduces the recombination of e−–h+ pairs.32,38
Scheme 2 The VB and CB energy levels and the mechanism of charge transfer in g-C3N4/ZnO heterostructure under visible light irradiation during organic pollutant degradation. |
Upon irradiation of visible light on g-C3N4/ZnO heterostructures, the e− on g-C3N4 can easily move from VB to CB (eCB−) leaving behind h+ on VB (hVB+) of g-C3N4. Now, the excited electrons may easily transfer from the CB of g-C3N4 to the CB of ZnO. Afterwards, the electrons on the CB of ZnO react with O2 and generate superoxide radicals (˙O2−), which further generate hydroxyl radicals (˙OH).21,30–33,43 These ˙OH radicals are responsible for the photodecomposition of MB and phenol. On the other hand, h+ in VB of g-C3N4 is also responsible for the generation of ˙OH radicals from OH− ions, which are the active species in dye degradation.20,21,33,43 As ZnO is an UV light active material, photo-excitation of it is not possible under visible light irradiation. The overall electronic transition and dye degradation reaction in g-C3N4/ZnO heterostructures are shown below:
It can be seen from the above reactions that the species like e−, ˙O2−, ˙OH, and h+ are directly involved in the photocatalytic process.44,45 Therefore, to confirm the role of electrons and holes in visible light photocatalysis, scavenging experiment has been carried out with t-BuOH and ammonium oxalate (AO) for MB degradation, using g-C3N4/ZnO heterostructure catalyst. t-BuOH was used as electron/radical scavenger and AO as a hole scavenger.30,33 For scavenging experiments, 1 mL of t-BuOH and 0.2 g of AO were used, keeping the other reaction parameters unaltered, to trap the electron/radical and holes, respectively. Incorporation of t-BuOH in the reaction mixture prevented the presence of e− and the formation of ˙O2− and ˙OH radicals, which largely affected the visible light dye degradation and results in ∼27% degradation. On the other hand, h+ was promptly scavenged with the addition of AO and ∼88% degradation was achieved. Therefore, it can be concluded that % degradation of dye is not greatly affected due to the h+ scavenger. Altogether, the formation of ˙O2− and ˙OH radicals play a major role in photocatalysis under the visible light. This scavenging experiment findings are also supported by earlier reported values.21,30,31
Structural stability of the ZnO catalysts after several reuse was also verified using XRD analysis. Fig. S11† represents eight major reflection peaks of ZnO in both dumbbell and cone shaped particles appear at 31.78°, 34.42°, 36.19°, 47.40°, 56.47°, 62.63°, 68.85°, and 76.71° confirm the presence of (100), (002), (101), (102), (110), (103), (112), and (202) crystal planes of ZnO, respectively. The other 2θ value at 27.6° is due to the (002) plane of g-C3N4. These findings are very much in line with earlier XRD data of the ZnO structures before any dye degradation. Therefore, it can be concluded that the structural purity and phase stability of dumbbell and cone shaped ZnO remain unchanged even after several cycles of the degradation process.
Footnote |
† Electronic supplementary information (ESI) available. See DOI: 10.1039/c5ra12463h |
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