Jie Huaab,
Haibo Chenga,
Xi Yuana,
Yan Zhanga,
Mei Liua,
Xiangdong Menga,
Haibo Li*ab and
Jialong Zhao*a
aKey Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, China. E-mail: lihaibo@jlnu.edu.cn; zhaojl@jlnu.edu.cn
bState Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130012, China
First published on 25th March 2015
The photoluminescence (PL) quenching of CuInS2/ZnS quantum dots (QDs) in blend films with FePt magnetic nanoparticles (MNs) was studied by steady-state and time-resolved PL spectroscopy. ZnS shell-coated CuInS2 QDs having various Cu/In molar ratios were synthesized via a hot-injection method. The PL peak of the QDs with enlarged band gap varied from 680 to 610 nm by decreasing the Cu/In ratio. The highest PL quantum yield of 44% was obtained for CuInS2/ZnS QDs with an optimum Cu/In ratio of 1/6. A decrease in PL intensity and lifetime was observed in the blend films of CuInS2/ZnS QDs and FePt MNs with different concentrations, demonstrating that electron transfer occurred from CuInS2 QDs to FePt MNs. Moreover, the rate and efficiency of electron transfer as a function of the concentration ratio of FePt MNs to CuInS2 QDs and temperature were obtained. It was found that the electron transfer rate significantly increased with increasing the FePt MN concentration and the temperature. Therefore, the experimental results indicated electron transfer-induced PL quenching in CuInS2 QD and FePt MN blend films should be considered in designing magnetic–fluorescent nanocomposite structures for realizing highly efficient PL.
Recently, ternary CuInS2 QDs are considered to be one of the most promising candidates to replace cadmium-based II–VI QDs for biomedical research, because they do not contain highly toxic element and have size- and composition-tunable PL from the near infrared (direct band gap (1.53 eV) of the bulk CuInS2) to the visible region.11–15 Chang group reported the synthesis of magnetic–fluorescent SiO2 nanohybrids, which were composed of CuInS2/ZnS QDs and Fe3O4 MNs.16 The nanohybrids could provide more efficient assistance of drug delivery into tumor cells for suppressing the growth of MCF-7 breast cancer cells. On the other hand, compared with Fe3O4, FePt alloy MNs have high anisotropy of 7 × 107 erg cm−3 and high chemical stability. Therefore, it is expected that the hybrid nanostructures composed of CuInS2 QDs and FePt MNs would be excellent magnetic–fluorescent nanocomposites. In order to better apply them in the biological field, the CuInS2 QDs are needed to exhibit high efficiency photoluminescence (PL). Previous works have reported CuInS2 QDs with tunable peak emissions and high PL quantum yields (QYs) by adjusting the cation composition or the QDs sizes.14,17–19 Besides, the PL QYs of CuInS2 QDs would be obviously enhanced after surface coating of ZnS shells because the binary ZnS layers can passivate the dangling bonds at the QDs surface, effectively removing the nonradiative intragap trap states associated with surface defects.18,20
Significant PL quenching has been observed in magnetic–fluorescent nanocomposites. The PL quenching processes are usually reflected by the change in fluorescent properties of the QDs such as the PL intensity and lifetime. In this work, the CuInS2/ZnS core/shell QDs with various Cu contents in the raw material solution were synthesized using a hot-injection approach. The PL properties of CuInS2/ZnS QDs in FePt MN and CuInS2/ZnS QD blend films were studied by steady-state and time-resolved PL spectroscopy to understand PL quenching mechanism of the QDs. Further the effect of the concentration ratio of FePt MNs to CuInS2 QDs and temperature on electron transfer processes between CuInS2 QDs and FePt MNs was also analyzed.
Both the absorption and emission spectra shift to short wavelength with decreasing the Cu/In molar ratio from 1/1 to 1/6. A broad absorption band for all the QDs is observed together with an absorption tail at the long wavelength side, because each ternary CuInS2 QDs may vary in size, geometry, and stoichiometry. The PL peak shifts from 680 to 610 nm, having the full width at half maximum (FWHM) of about 104 nm. The PL QYs of CuInS2/ZnS core/shell QDs were determined to be 15, 31, and 44% for the QDs with Cu/In molar ratio of 1/1, 1/3, and 1/6, respectively. The results indicate the CuInS2/ZnS core/shell QDs with different PL wavelength and QYs could be obtained by changing the Cu/In ratio. The normalized PL spectra of QD films are shown in Fig. 1. It can be seen that the PL peak of QDs obviously shift to red, which results from the energy transfer in closely packed QDs.
The XRD patterns of as-synthesized CuInS2/ZnS core/shell QDs are shown in Fig. 2(a). The patterns for the CuInS2/ZnS QDs show the characteristic peaks of the zinc blende (cubic) structure, similar to those reported previously.21,22 It can be seen that the FWHM of XRD diffraction peaks for samples are almost the same, indicating the sizes of the all samples are similar. The diffraction peak of the CuInS2/ZnS QDs shifts to larger angles with decreasing the Cu/In ratio, which is consistent with the smaller In3+ (r = 0.094 nm) cationic radius than those of Cu+ (r = 0.100 nm). The composition of the QDs was estimated by EDX [Table S1†]. The Cu/In molar ratios of the obtained QDn (n = 1–3) were determined to be 1.13, 0.83, and 0.67, respectively. Their sizes are about 3.1 nm estimated from the TEM image as shown in Fig. 2(b). The shell thickness is estimated to be about 1 monolayer (ML) by using one ML ZnS (0.31 nm) on the basis of the respective compounds.23 The high resolution TEM image exhibits clear lattice fringes as shown in the inset of Fig. 2(b), which suggests the highly crystalline nature.
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| Fig. 2 (a) XRD patterns of CuInS2/ZnS core/shell QDs with different Cu/In ratio. (b) TEM image of QD3 with Cu/In ratio of 1/6. A high resolution TEM image of QD3 is shown in the inset. | ||
Fig. 3 shows the XRD pattern and VSM of the obtained FePt MNs. The corresponding TEM image is shown in the inset of Fig. 3(a). It can be seen that the as-prepared FePt MNs have chemically disordered fcc structure. The FePt MNs are uniform spherical-shaped particles and the size of the particles is about 4 nm. The room-temperature magnetic hysteresis curve of FePt MNs exhibits superparamagnetism at room temperature. No PL is observed in FePt MNs under excitation of 405 nm.
In order to understand the PL quenching of CuInS2/ZnS core/shell QDs in CuInS2–FePt system, the colloidal CuInS2/ZnS QDs were mixed with FePt MNs and deposited as thin films. Fig. S1† shows the TEM and AFM images for CuInS2–FePt deposited films from mixed colloids with various concentrations of FePt MNs, respectively, confirming the formation of blend films for FePt MNs and CuInS2/ZnS QDs. The absorption spectra of CuInS2–FePt mixed colloids with different concentrations of FePt MNs in chloroform are seen in Fig. S2.† No new band is observed in the absorption spectra of the CuInS2 QDs after FePt MNs added into the QD solution. However, a gradual decrease in PL intensity is observed for the blend films with addition of FePt MNs, accompanying by a continuous blue shift of about 15–20 nm in PL peak, as shown in Fig. 4. For example, the PL peak of QD2 is 685 nm and that of the QD2–FePt blend films (FePt/QD2 ratio of 2.0) shifts to 667 nm. Previous studies have reported the PL quenching in the following hybrid nanocrystals. Zhu and his colleagues observed the significant PL quenching in magnetic–fluorescent nanocomposites based on MnFe2O4 MNs and CuInS2/ZnS QDs.24 They suggested that the PL quenching resulted from the effect of MnFe2O4 absorption on the QDs emission, or caused by the blocking of MnFe2O4 on QDs excitation/emission surfaces. Our previous work also found obvious PL quenching with a red shift in PL peak in CdTe/CdS core/shell QDs when ZnO nanocrystals were added into QDs solution.25 The PL red-shift was considered to result from Förster energy transfer from CdTe/CdS core/shell QDs with a small core to the QDs with a large core. However, the blue-shift of PL in our CuInS2 QD–FePt MN blend system is not understood.
To further determine the mechanism of PL quenching, the PL decays of CuInS2 QDs were measured in the CuInS2 QD–FePt MN blend films. Fig. 5 shows the PL decay curves of CuInS2 QDs in the blend films with different concentrations of FePt MNs under the excitation wavelength of 405 nm. It is clearly shown that the PL decay significantly becomes faster after addition of the FePt MNs. Because the PL decay of the CuInS2 QDs film was independent on the solution concentration due to close-packed QDs in the thin films [Fig. S3†], the significant decrease in PL decay lifetime was resulted from the adding of FePt MNs.
In general, the shorten PL lifetime can result from energy transfer, electron transfer and nonluminescent exciplex formation.26 As seen from Fig. 1 and S2,† there is no spectral overlap between the absorption of FePt MNs and the PL emission of the CuInS2 QDs, which is a prerequisite for energy transfer, indicating that we can rule out energy transfer between CuInS2 and FePt. Thus we can also exclude that the PL quenching arise from exciplex formation because no new absorption band is observed in the absorption spectra of CuInS2–FePt blend films. Therefore, we suggest that the PL reduction in CuInS2–FePt blend films originates from electron transfer between CuInS2 and FePt, because the electron transfer process is an additional nonradiative de-excitation path.27
The PL decays of QDn–FePt blend films are well fitted by a biexponential function:18,28 I(t) = A1
exp(−t/τ1) + A2
exp(−t/τ2), where A1 and A2 are fractional contributions of PL decay lifetimes τ1 and τ2. The amplitude-weighted average lifetime τAV can be obtained by an relation: τAV = (A1τ12 + A2τ22)/(A1τ1 + A2τ2), the corresponding fitting parameters are summarized in Table S2.† The PL dynamics process retains biexponential character, which indicates that the PL in the ZnS shell coated CuInS2 QDs may come from two channels as follows: the short-lived component τ1 in tens of nanoseconds may come from a quantized electron state to a deeply-trapped hole state, while the long-lived one τ2 in hundreds of nanoseconds would result from the defect-related recombination including the recombination from defects/traps formed at the interface between the CuInS2 core and ZnS shell due to the lattice mismatch and interfacial strain,29 and the donor–acceptor pairs recombination from internal defects.
Fig. 6 shows the lifetime components τ1, τ2, and average lifetime τAV of the CuInS2 QDs in CuInS2–FePt blend films as a function of the FePt MNs concentration. It can be seen that the components τ1 and τ2 of PL lifetimes gradually decrease with addition of FePt MNs, and the value of τ1 is more affected than that of τ2 after the addition of FePt MNs. The electron transfer rate kET and efficiency ηET between CuInS2 QDs and FePt MNs are obtained by expressions:30 kET = 1/τQD–FePt − 1/τQD and ηET = 1 − τQD–FePt/τQD, respectively, where the τQD–FePt and τQD are the average lifetimes of CuInS2 QDs in blend and neat films. The electron transfer rate kET and efficiency ηET for QD1–QD3 to FePt MNs as a function of the FePt MNs concentration are shown in Fig. 7. It can be found that the electron transfer rate kET increase from 0.92 × 106, 1.41 × 106, and 1.55 × 106 s−1 to 3.48 × 106, 3.61 × 106 and 4.41 × 106 s−1 for QD1–FePt, QD2–FePt, and QD3–FePt systems, respectively, when the FePt/QDn ratio increases from 0.2 to 2.0. The values of kET is slightly smaller than the ET rate ∼107 s−1 of CuInS2 core–TiO2 system reported by Sun et al.31 This is because the ZnS shell on CuInS2 acts as a tunneling barrier and the electrons have to tunnel through the shell barrier and transfer to FePt MNs in CuInS2/ZnS–FePt systems. The electron transfer processes between QDs and metal oxides/metallic domains were discussed by Kamat for CdSe/TiO2 (ref. 32) and Sapra for CdSe/Au systems.33 It has been found that the driving force for electron transfer is provided by the energy difference between the donor (CdSe) and acceptor (TiO2 or Au) and the electron transfer rate will increase with increasing the energy difference. In our system, high-energy value of the conduction band of CuInS2 QDs provides favorable conditions to transfer the photoexcited electrons from CuInS2 QDs to FePt MNs, assigned as transfer channel ET1. However, we also observed another transfer channel ET2, namely, that electrons trapped at donor defects including deep and shallow defects or localized states can also transfer to FePt MNs. The two transfer processes of electrons from CuInS2 QDs to FePt MNs might cause the PL blue-shift. When the concentration of FePt MNs is low in CuInS2–FePt blend films and most of CuInS2 QDs are far from the FePt MNs surface, the PL decay time of the CuInS2 QDs slightly decreases and the electron transfer rate kET is low. With further increasing the concentration of FePt MNs, the PL decay time of the CuInS2 QDs significantly decreases and the rate significantly increases because most of the CuInS2 QDs distributed near the surface of FePt MNs, as shown in Fig. S1.† In addition, the similar trend of the electron transfer efficiency ηET with the FePt the MN concentration also can be observed. The maximum ηET from QD1–QD3 to FePt MNs is 24%, 33%, and 42%, respectively, when the FePt/QD concentration ratio is 2.0. The results indicate that the PL property of magnetic–fluorescent composites can be tuned by adjusting the distance between CuInS2 QDs and FePt MNs.
Further we notice that the values of kET and ηET for CuInS2–FePt blend films increase clearly as the Cu/In ratio decreases as seen in Fig. 7. It is well accepted that the PL emission from the radiative recombination in CuInS2 QDs is associated with copper vacancies (VCu).34 The degree of Cu deficiency in CuInS2 QDs can result in a reduction in energy level of the valence band and, consequently, a higher band gap is obtained for more Cu-deficient CuInS2 QDs by virtue of the attenuated repulsion between Cu d and s p orbitals,35,36 which causes the PL blue-shift with decreasing Cu contents. Moreover, the CuInS2 QDs would have more defect states in the interior of the QDs with decreasing Cu/In molar ratio, which may result in more efficient electron transfer from CuInS2 QDs to FePt MNs. Based on above results, we proposed a schematic diagram as shown in Fig. 8, to describe the PL recombination and electron transfer processes in CuInS2 QD–FePt MN blend films.
Temperature dependence of electron transfer process can give additional information regarding their mechanism. The temperature-related PL decay curves for CuInS2 QDs films and CuInS2 QD–FePt MN blend films (FePt/CuInS2 ratio of 0.5) in the temperature range from 80 to 300 K are shown in Fig. 9. The PL decay curves were analyzed by a biexponential function and the average lifetimes τAV were obtained. Fig. S4† shows the τAV of QDn and QDn–FePt blend films (n = 1, 2, 3) as a function of the temperature. It can be seen that the PL lifetimes of three QDn and QDn–FePt blend films exhibit the similar trend, namely, the PL lifetimes decrease with increasing temperature from 80 to 300 K. It is known that the temperature-dependent PL spectroscopy is often used to study the radiative and nonradiative relaxation processes as well as exciton–phonon coupling in colloidal QDs.37,38 In general, the thermal quenching behavior in QDs is attributed to multiphonon relaxation and thermally activated nonradiative recombination process.39,40 The thermally activated nonradiative recombination process induces the PL quenching by thermal escape of carrier from luminescent centers. For QDs, this process is generally viewed as escape of thermally activated carriers to trap states.41 Thus, the decrease of PL lifetime demonstrates that the CuInS2/ZnS QDs in neat and blend films have some nonradiative trap states on the surface of the QDs or at the interface between the CuInS2 core and ZnS shell.
Based on the obtained average lifetimes τAV at various temperatures, we calculate the electron transfer rate kET and plot the logarithm of the kET as a function of inverse temperature as shown in Fig. 10. The kET rates for three CuInS2–FePt blend films increase with increasing temperature. The kET rates as a function of temperature can be fitted well with a linear form, indicating that the data follow Arrhenius behavior and the electron transfer can be modeled using the expression:42 kET = kelν
exp(−ΔG/kBT), where ΔG is the Gibbs free energy of activation, kel is the electronic transmission coefficient, ν is the frequency of nuclear motion over the barrier, T is the temperature, and kB is the Boltzmann constant. A linear regression of the data gives ΔG = 3.24, 3.09, and 2.65 meV for QD1–FePt, QD2–FePt and QD3–FePt system, respectively. The calculated energy of activation slightly decreases with decreasing Cu content in CuInS2 QDs. The kET rate shows an Arrhenius dependence on temperature, in agreement with the Marcus theory.43,44 The temperature dependence of kET rate in CuInS2–FePt systems shows the same trend as that of CdSe–TiO2 systems reported by Tafen et al.42 However, it has not been reported yet about the temperature dependence of the electron transfer rate between QDs and MNs in experiment. We will study the variation of electron transfer rate between CuInS2 QDs and FePt MNs with different particle size in detail. Therefore, the result further confirms that the PL quenching mechanism of CuInS2 QDs in CuInS2 QD–FePt MN blend films is related to electron transfer.
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| Fig. 10 Electron transfer rate kET in the CuInS2 QD–FePt MN blend films as a function of temperature. | ||
Footnote |
| † Electronic supplementary information (ESI) available: Elemental composition of CuInS2/ZnS QDs; TEM and AFM images for CuInS2–FePt dropped films with FePt/QD1 ratio of 0.2 and 2.0 absorption spectra of FePt MNs, CuInS2/ZnS QDs and CuInS2–FePt mixed colloids in chloroform with different concentrations; PL decay curves of CuInS2/ZnS core/shell QD3 with different concentration; fitting parameters of PL decay curves for QD1–QD3 with different concentration of FePt MNs; temperature-dependent PL decay times τAV of QDn and QDn–FePt blend films (n = 1, 2, 3) at different temperatures from 80 to 300 K. See DOI: 10.1039/c5ra04542h |
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