Zifan Zeng†
,
Ping Sun†,
Jiliang Zhu* and
Xiaohong Zhu
Department of Materials Science, Sichuan University, 610064 Chengdu, China. E-mail: jlzhu167@scu.edu.cn; Fax: +86 28 85432078; Tel: +86 28 85432078
First published on 4th February 2015
Ag-doped manganese oxide was deposited on carbon fiber via a cathodic reduction method, then the deposits were dehydrogenized and oxidised by heat treatment at 350 °C for 4 h. Scanning electron microscopy, X-ray diffraction and X-ray photoelectron spectroscopy were utilized to characterize the structure and state of the deposits. The results show that manganese oxide presents an amorphous fibrous structure and is a mixture of tetravalent and trivalent. The cyclic voltammetry curves measured with three-electrode methods in 0.5 M Na2SO4 electrolyte reveal that the specific capacitance of manganese oxide without and with Ag is about 450 and 825 F g−1 at the scan rate of 5 mV s−1, respectively. Hence, Ag doping improves the pseudo-capacitor behavior. The MnOx-based supercapacitors fabricated with 0.5 M Na2SO4 as electrolyte are characterized by cyclic voltammetry and galvanostatic charge–discharge to investigate the electrochemical properties. In order to study the cycle life of the devices the galvanostatic charge–discharge process is cycled 3000 times and the specific capacitance shows almost no change after 3000 cycles.
Many physical or chemical techniques have been used to prepare manganese oxide for electrode application in electrochemical capacitors, such as hydrothermal method, sol–gel method, electrostatic spray, sputtering, and electrochemical deposition.16 Among of those methods, significant interest in electrochemical deposition for manganese oxide film is generated because the process can be easily performed on conductive substrates of complex shape and preciously control of the film thickness is enable to be implemented by regulating the electrical charge delivered during electrolysis.1 Usually, electrochemical deposition for preparing manganese oxide is segmented into anodic oxidation and cathodic reduction. Anodic oxidation manufactures manganese oxide film by the way that manganese ions loss electron on the surface of substrate to change from low valence to high valence.1,5,12,19,20,23–29 Amorphous MnOx·nH2O films prepared by anodic deposition has been reported in the literature.25 The film manifests a good specific capacitance (about 320 F g−1) at the potential scan rates of 5 mV s−1, high reversibility and high pulse charge–discharge properties.25 However, anodic oxidation cannot be used for deposition of manganese oxide on metallic substrates due to the fact that the metallic substrates can absorb electron leading to an occurrence of dissolving in the solution.18 This problem can be avoided by cathodic deposition because high valence of manganese transforms to low valence of manganese when the manganese ions absorb electron on the substrate surface.15,17,18,30–32,43
According to the mechanism of storage energy of pseudo-capacitors, the redox reaction of manganese generates on the electrodes and the electrolyte interface.9,10 Therefore, it is critical for the effective utilization of electrodes mass since charges transfer and diffuse during charge–discharge, which has been demonstrated by decrease of specific capacitance with the increase of the thickness of manganese oxide film. In addition, cations in the electrolyte and protons participate in the process of charges transfer and diffusion.1,9,33 From the above, the factors that influence electrochemical properties of manganese oxide film are believed to mainly include morphology, structure and conductivity of electrodes.17 The manganese oxide prepared by anodic oxidation, which transforms from low valence to high valence, and manganese oxide prepared by cathodic reduction, for which the Mn ions direct vary from high valence to low valence during electrolysis, both present layered structure lying parallel to the electrode surface.15,24,27 This makes it difficult for charge-compensating cations to conduct along a direction perpendicular to the electrodes surface.1 A cathodic deposition of fibrous manganese oxide film performed in the solution containing Mn2+ ions, whose structure is nanofiber, enables this problem to be solved.15 The deposition procedure shown in eqn (1) produces Mn(OH)2 deposit, then Mn(OH)2 transforms MnOx film by dehydrogenation and oxidation.
Mn2+ + 2H2O + 2e− → Mn(OH)2↓ + H2↑ | (1) |
On the other hand, manganese oxide itself is a semiconductor and its low conductivity (10−5 to 10−6 S cm−1) also limits charges transfer, which results in the real value of specific capacitance lower than the theoretical value.9,17,18,34,35 The composite electrodes mixing manganese oxide with highly conductive materials, such as metal nanoparticles,18 carbon nanotubes,34 conductive polymer35 and graphene,36 have been extensively researched to improve the electrical conductivity. In our present work, Ag-doped MnOx with fibrous structural and good electrochemical performance was applied to the electrode for electrochemical capacitors via cathodic codeposition in the solution containing Mn2+ ions and glucose.
Cathodic deposition was performed by applying a constant potential of −2.5 V in a common glass cell with the carbon fiber substrate as working electrode, a Ag/AgCl as reference electrode, and a platinum foil as counter electrode. It is necessary to rigidly monitor charge delivered in order to control the active materials mass of 40 μg cm−2. After electrodeposition, the electrodes were dried at 80 °C for 6 h. Then glucose was resolved by heat treatment at 350 °C for 4 h. The mass of active materials was decided by weighing the substrates before and after deposition experiments followed by heat treatment at 350 °C for 4 h.
![]() | (2) |
It is feasible to obtain specific capacitance and the equivalent series resistance from galvanostatic charge–discharge curve. The specific capacitance equals current (I) multiplied by charge time (t), and subsequently divided by the Δm mass of active materials and potential window (U).10,11,15,17,41,44
![]() | (3) |
Fig. 1B shows XRD pattern of the films co-deposited on the stainless steel substrate under the same condition as carbon fiber. The sample displays three strong peaks at 43.5°, 50.6° and 74.4° which are contributed from iron substrate. With the exception of three strong peaks, there is a broad weak peak at 37.1° corresponding to α-MnO2, which reveals that the deposited films contain manganese oxide. This agrees with a number of manganese oxide films prepared by electrochemical deposition methods in the literatures.15,16 The weak peak intensity results from the poor crystalline and very thin thickness of manganese oxide films. The peaks related to silver are not found in the XRD pattern since silver does not crystallize and the content of silver is too small to be detected by X-ray diffraction.
The surface appearance of electrodes deposited by cathodic reduction from Mn2+ solution with silver and without silver was investigated using scanning electron microscopy (Fig. 2). It shows that the carbon fiber surface after electrodeposition, regardless of doping Ag (Fig. 2C) and non-doping Ag (Fig. 2B), appears rougher than the surface without electrodeposition (Fig. 2A), implying that there are deposits produced on carbon fiber by plating. Under higher magnification, the morphology of pure MnOx deposits displays a porous and fibrous 3D network (Fig. 2D). The pore size is about 40–80 nm and fiber length is about 100–400 nm. The nanostructure is profitable for ion transportation and effective utilization of manganese oxide, thereby resulting in the improvement of electrochemical properties.15 However, doping silver reduces the length of fiber and the fiber interval (Fig. 2E), suggesting that silver limits growth of MnOx fiber. The length of fiber is measured about 80–200 nm and interval size is about 10–30 nm.
The chemical element state and component of electrodes obtained by cathodic deposition with silver and without silver were investigated by XPS (Fig. 3A). It shows that Mn 2p, Mn 3s and O 1s peaks are attributed to manganese oxide and the C 1s peak relates to substrate, which confirms it is accessible to cathodically deposit manganese oxide from Mn2+ ions. The presence of Ag 3d peak on the Ag-doped spectra is attributed from doping Ag in manganese oxide. Besides, the Si 2s and Si 2p corresponding to silicon dioxide (proved from O 1s peak later) appear at both Ag-doped and Ag non-doped spectroscopy. SiO2 was impurity brought in during the process of preparing electrodes. Table 1 summarizes the position and component of Mn 2p, O 1s, C 1s and Ag 3d core level spectrum from XPS spectra. The positions of Mn 2p and O 1s peak with and without Ag is about 639.0 eV and 526.5 eV respectively, indicating that the oxidation state of manganese oxide almost does not change.39,44 The result is also confirmed by the same atomic ratio of Mn/O (about 1:
2) before and after doping Ag. Quantitative calculation of silver percentage composition based on atomic Ag/Mn ratio after exclusion of C shows doping amount of silver is about 4.2%. The Ag 3d core level spectra (Fig. 3B) can be used to investigate valance of silver. The positions of Ag 3d5/2 and 3d3/2 peak located at 368.2 eV and 374.3 eV respectively are concordant with the positions of elemental silver peaks.37 Thus it is believed that the elemental silver has been doped into the MnOx during electrochemical deposition.
Film | Peak | Position (eV) | FWHM (eV) | Area (cps eV) | Atomic conc (%) | Mass conc (%) |
---|---|---|---|---|---|---|
Non-doped | Mn 2p | 639.05 | 3.050 | 81090.9 | 10.87 | 34.10 |
O 1s | 526.50 | 1.353 | 45055.0 | 20.94 | 13.19 | |
C 1s | 281.40 | 0.752 | 50005.5 | 68.19 | 46.77 | |
Ag-doped | Mn 2p | 638.90 | 3.257 | 95658.3 | 13.30 | 37.77 |
O 1s | 526.60 | 1.526 | 55395.0 | 26.70 | 22.08 | |
C 1s | 281.40 | 0.821 | 42016.3 | 59.42 | 36.90 | |
Ag 3d | 364.65 | 1.184 | 9013.9 | 0.58 | 3.25 |
Since MnOx compound is composed of manganese and oxygen coalescing by covalent bond generated by blending unpaired electron of valence shell, the O 1s core level spectra (Fig. 3C) can be used to assess the valence and oxidation state of manganese for the electrodes.9,12,19,33 From the Fig. 3C, it is obvious that the O 1s peak is a mixed peak consisting of three peaks. The results from calculating the O 1s peak by Gaussian peak split are displayed at Table 2. It shows that the three peaks located at 529.6 eV, 531.3 eV and 533.9 eV are attributed to the Mn–O–Mn bond, Mn–OH bond and Si–O–Si bond, respectively. The Mn–OH bond represents MnOOH related to trivalent manganese. As MnOOH also contains the Mn–O–Mn bond, the Mn–O–Mn bond represents MnO2 related to tetravalent manganese and MnOOH.9,19 The component of tetravalent manganese species is computed by subtracting the contribution of the Mn–OH bond from Mn–O–Mn bond. Hence, the contents of tetravalent and trivalent manganese from pure MnOx is 23.3% and 27.2%, compared to 16.5% and 29.3% for Ag-doped MnOx. The oxidation state can be computed from the content of trivalent and tetravalent manganese according to
![]() | (4) |
Film | Mn 3s (eV) | O 1s (eV) | Oxidation state Mn 3s/O 1s | ||||
---|---|---|---|---|---|---|---|
Peak 1 | Peak 2 | Δ eV | BE (eV) | Area (%) | |||
Non-doped | 84.6 | 89.7 | 5.1 | Mn–O–Mn | 529.6 | 50.5 | 3.5/3.5 |
Mn–OH | 531.3 | 27.2 | |||||
O–Si–O | 533.9 | 22.3 | |||||
Ag-doped | 84.4 | 89.6 | 5.2 | Mn–O–Mn | 529.7 | 45.8 | 3.3/3.4 |
Mn–OH | 531.2 | 29.3 | |||||
O–Si–O | 533.9 | 24.9 |
The multiplet splitting of Mn 3s peaks is also useful for studying oxidation state of manganese for Ag-doped and non-doped MnOx. The Mn 3s peak separation of electrons in the core level with unpaired electrons in the valence band level is caused by the electron exchange interaction in the 3s–3d core level, which reveals that the energy separation of the Mn 3s peaks has a linear relation with the oxidation state of manganese.9,19 The Mn 3s peaks shown in Fig. 3D and Table 2 indicate the energy separation of 5.1 eV without silver and 5.2 eV with silver, respectively. According to the energy separation of 5.79, 5.50, 5.41 and 4.78 eV for reference samples of MnO, Mn3O4, Mn2O3 and MnO2,9,33 5.1 eV or 5.2 eV locates between 4.78 eV and 5.41 eV. Therefore, it is supposed that the MnOx plated by cathodic reduction from Mn2+ ions consists of Mn2O3 and MnO2. The components of tetravalent and trivalent manganese, estimated from the energy separation of Mn 3s peaks, are 49.2%, 51.8% for non-doped MnOx and 33.3%, 66.7% for Ag-doped MnOx, respectively. In other words, the oxidation state of Mn is 3.5 and 3.3, respectively, for non-doped and Ag-doped MnOx, which is similar to the result from O 1s peak.
To gain more information about the oxidation state of manganese, Mn 2p core level spectrum is investigated in detail (Fig. 3E). It shows that the positions of Mn 2p3/2 and Mn 2p1/2 peaks locates at 642.1 eV and 653.7 eV respectively for the deposits with and without doping Ag, whereas the reference sample positions of Mn 2p3/2 and Mn 2p1/2 peaks for Mn(III), Mn(IV) is 641.7 eV and 653.3 eV, 642.2 eV and 653.8 eV, respectively. So it is reasonable to assume that Mn 2p3/2 and Mn 2p1/2 peaks are mixed peaks composed by Mn(III), Mn(IV).12 The results shown in Table 3 reveal that doping Ag in MnOx by cathodic reduction almost does not change the oxidation state of manganese. The conclusion is supported by Mn 3s and O 1s peaks.
Film | Mn 2p3/2 | Mn 2p1/2 | ΔBE (eV) Mn–O | ||
---|---|---|---|---|---|
Tetravalent (%) | Trivalent (%) | Tetravalent (%) | Trivalent (%) | ||
Non-doped | 95.1 | 4.9 | 92.2 | 7.8 | 112.5 |
Ag-doped | 88.1 | 11.9 | 88.5 | 11.5 | 112.4 |
The cyclic voltammetry curves for studying the electrochemical performance of MnOx non-containing and containing silver deposited on carbon fiber by cathodic reduction were tested using three-electrode method with voltage scan rate of 100 mV s−1, 50 mV s−1, 20 mV s−1, 10 mV s−1 and 5 mV s−1 in 0.5 M Na2SO4 solution, as shown in Fig. 4A and B, respectively. They reveal that MnOx electrodes non-doped and doped with Ag present typical electrochemical capacitance behavior. When the scanning speed is lower than 50 mV s−1, a peak representing anodic oxidation from trivalent manganese to tetravalence appears at CV curves around 2.7 V.38 It is the Ag-induced increase in the conductivity of active material that makes MnOx more effectively to participate in redox process leading to strengthened pseudo-capacitance behavior. However, there is no redox peak in the CV curve without doping, indicating that the MnOx doped with Ag has better pseudo-capacitance behavior.
According to CV curve, the specific capacitance is calculated by eqn (2) at different scan rates and the result is displayed in Fig. 4C. As the scan rate decreases from 100 mV s−1 to 5 mV s−1, the specific capacitance of MnOx both doped and non-doped gradually increase. Above the scan rate of 50 mV s−1, the specific capacitance of MnOx containing Ag is lower than MnOx non-containing Ag. The phenomena can be explained with SEM images of MnOx with and without silver. Capacitance behavior is mainly influenced by diffusion process of ions and proton at high scan rate. The SEM images have confirmed that the morphology of MnOx doped with Ag is more compact than non-doped MnOx. The compact morphology results in limitation of ions and proton diffusion. Thus, MnOx without Ag appears higher specific capacitance at high scan rate. However, charge transfer process determines the electrochemical performance of capacitors at low scan rate. Charge transfer process is related with active materials conductivity. The co-deposition of MnOx and silver improves conductivity of manganese oxide and thus gives rise to higher specific capacitance at low scan rate. In addition, the specific capacitance of MnOx without Ag is 450 F g−1 at scan rate of 5 mV s−1, which is approximately the specific capacitance of ∼400 F g−1 reported in literature.15 Doping Ag improves specific capacitance to 825 F g−1 at the scan rate of 5 mV s−1. The value is even higher than the specific capacitance of 770 F g−1 synthesized by cathodic co-deposition of manganese oxide and silver from Mn7+ electrolyte reported by Yaohui Wang et al.18 The consequence is caused by the microstructure of electrode. The Ag-doped manganese oxide obtained from Mn7+ electrolyte presents porous structure, yet the microstructure of MnOx with Ag deposited from Mn2+ solution is nanofibrous. The fibrous structure enables manganese oxide to be more effectively utilized to increase the specific capacitance.1,16
In order to investigate electrochemical performance of as-prepared Ag-doped MnOx used as supercapacitor electrode, two pieces of the carbon fiber with Ag-doped MnOx was assembled into devices with 0.5 M Na2SO4 as electrolyte. The devices were characterized by different methods including cyclic voltammetry, galvanostatic charge–discharge. The data of cyclic voltammetry at the scan rate of 5 mV s−1 (Fig. 5A) shows that the MnOx doped with Ag displays better capacitance behavior (including larger Faradaic current and area of cyclic voltammetry curve) in comparison with non-doped MnOx. The specific capacitance of manganese oxide with and without Ag computed by eqn (2) from CV curve are about 810 F g−1 and 430 F g−1 at the scan rate of 5 mV s−1, respectively. The values are similar to the specific capacitance tested by three-electrode way, revealing that the electrode keep good uniformity.
The galvanostatic charge–discharge properties were characterized by chronopotentiometry with different current density of 10 A g−1, 5 A g−1, 4 A g−1, 3 A g−1, 2 A g−1, 1 A g−1 and 0.5 A g−1, shown in Fig. 5B (non-dope) and Fig. 5C (Ag-doped). From the constant current charge–discharge curves, it is not difficult to conclude that charging or discharging duration time of the MnOx containing Ag is longer than the MnOx non-containing Ag, revealing the MnOx containing Ag has larger capacitance. The specific capacities of manganese oxide with and without Ag calculated by eqn (3) are 815 F g−1 and 440 F g−1 at the constant current density of 0.5 A g−1. Moreover, a larger voltage drop of MnOx with Ag, contributed to the equivalent series resistance (ESR), can be observed at the same current comparing with non-doped MnOx. It confirms that MnOx conductivity is improved by doping silver, a good electrical conductivity.
Manifold cycles were used to characterize the cyclic stability, thus determining the cycle life of devices. As shown in Fig. 5D, the galvanostatic charge–discharge processes of MnOx with Ag are performed 3000 cycles at the current density of 3 A g−1. The increase in specific capacitance in initial cycles is observed, which attributed to the electrochemical oxidation of MnOx.15 After 200 cycles, the device reaches stabilization and remains specific capacitance unchanged until to 3000 cycles. So, it is considered that the devices have long cyclic life. The increase in specific capacitance at initial 20 cycles, as shown in Fig. 5D, is contributed from that as-prepared manganese is the mixture of tetravalent and trivalent manganese, which has been demonstrated by XPS.
Electrochemical impedance spectroscopy (EIS) was performed to further investigate the Ag-doped MnOx capacitive behavior associated with resistance of the electrode and the corresponding Nyquist plots are displayed in Fig. 6. The electrochemical impedance test was carried out at 5 mV amplitude (vs. Ag/AgCl) with a frequency range of 0.01 Hz to 1000
000 Hz. Nyquist plots are composed of a semicircle in the high frequency region and a straight line in the low frequency region. The intercept of real axis and the Nyquist plots indicate the inner resistance for capacitor which is a combinational resistance of electrolyte resistance, intrinsic resistance of substrate and contact resistance at the active materials/current collector interface. Obviously, Ag-doped MnOx had a relatively lower contact resistance (about 5.7 Ω) than non-doped MnOx (about 7.5 Ω), revealing the active materials MnOx and the conductive Ag could contact with each other closely, which could increase the electrical conductivity of electrode. The slope of the curves in the low frequency region showed the Warburg impedance, which represented the electrolyte diffusion in the porous electrode and proton diffusion in the host material. As shown in Fig. 6, Ag-doped MnOx had also a relatively steeper slope of the straight line especially in the low frequency region demonstrating Ag-doped MnOx facilitated smoother charges transfer and ion diffusion.
A radar plot was employed to show the overall performance of as fabricated assembled devices with MnOx electrodes (with/without Ag doping) as shown in Fig. 7. Red and blue curves represented the supercapacitor with non-doped MnOx electrode and Ag-doped MnOx electrode, respectively. They were generated by connecting the electrochemical performance data points. In general, a larger area encompassed within a radar plot indicates better overall performance.10 The power density (1.66 kW kg−1 for Ag-doped MnOx and 2.20 kW kg−1 for non-doped MnOx), energy density (113 W h kg−1 for Ag-doped MnOx and 61 W h kg−1 for non-doped MnOx) and specific capacitance were calculated from charge–discharge curves at a scan rate of 0.5 A g−1. The supercapacitor with non-doped MnOx electrode owned a higher power density on account of that it has a looser structure which facilitates the ion and proton diffusion. However, the supercapacitor with Ag-doped MnOx electrode owned higher specific capacitance, higher energy density and lower equivalent series resistance.
![]() | ||
Fig. 7 A radar plot summarizing and comparing the performance of assembled devices with MnOx electrodes (with/without Ag doping). |
Footnote |
† These authors contributed equally to this work. |
This journal is © The Royal Society of Chemistry 2015 |